研究目的
To characterize the effects of high neutron fluences up to 1014 cm?2 1-MeV-equivalent on SiPMs from Hamamatsu and SensL, and to explore annealing and cryogenic operation for single photon detection.
研究成果
Neutron irradiation significantly increases dark count rate in SiPMs, making single photon detection challenging at room temperature. Annealing at high temperatures reduces dark count rate by 1-2 orders of magnitude, but does not cure breakdown voltage shifts. At cryogenic temperature (77 K), dark count rate is dominated by trap-assisted tunneling and can be reduced to below 1 kHz, enabling single photon detection even after irradiation to 1014 neq/cm2. This demonstrates the feasibility of using SiPMs in high-radiation environments like the HL-LHC with appropriate cooling and annealing.
研究不足
The study is limited to specific SiPM models from Hamamatsu and SensL. Annealing at high temperatures may induce other changes in the devices, such as discoloration of resin, which was not fully assessed. The mechanisms behind breakdown voltage shift and annealing effects are not fully understood without detailed device knowledge. Operation at cryogenic temperatures requires careful handling to avoid thermal stress damage.
1：Experimental Design and Method Selection:
The study involved irradiating SiPMs with neutrons at different fluences, followed by characterization of IV curves, dark count rates, and response to laser pulses at various temperatures. Annealing at high temperatures was performed to study recovery effects.
2：Sample Selection and Data Sources:
SiPM models from Hamamatsu (S13360-1325CS, S13360-1350CS, S13360-1375CS) and SensL (MicroFC-SMTPA-10020, MicroFC-SMTPA-10050) were used, selected based on cell size and manufacturer. Irradiation was done at the LENA laboratory using a TRIGA Mark II nuclear reactor.
3：List of Experimental Equipment and Materials:
Equipment included a nuclear reactor for neutron irradiation, climatic chamber for annealing, oscilloscope (Rohde & Schwarz RTO1044), laser (Hamamatsu PLP-10), amplifiers (Texas Instruments LMH6702), and cryogenic setup for cooling to 77 K. Materials included SiPMs, cables, resistors, and optical fibers.
4：Experimental Procedures and Operational Workflow:
SiPMs were irradiated in steps to fluences of 1011, 1012, 1013, and 1014 neq/cm
5：IV curves and dark count rates were measured before, during, and after irradiation. Annealing was performed at temperatures from 50°C to 175°C for up to 600 hours. Measurements were repeated at room temperature, -30°C, -40°C, and 77 K. Laser pulse responses were recorded to assess single photon detection capability. Data Analysis Methods:
IV curves were analyzed using the inverse logarithmic derivative method to extract breakdown voltage. Dark count rates were measured and plotted against fluence and annealing time. Signal amplitudes from laser pulses were analyzed for photon counting.
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