摘要： The excellent properties of III-V semiconductors have make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire counterparts further provide interesting geometry and quantum confinement effect which benefit various applications. Among many members of all III-V semiconductors, III-antimonide nanowires have attracted significant research interest due to their narrow direct bandgap and high carrier mobility. However, due to the difficulty of nanowire fabrication, the development of III-antimonide nanowires and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of the advance in the understanding and the fabrication technique, electronic and optoelectronic device based on III-antimonide nanowires with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide nanowire using different techniques and strategies for fine-tuning the crystal structure, composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide nanowires in electronics and optoelectronics is also surveyed. All these discussion would give valuable guidelines to the design of III-antimonide nanowires for next-generation device utilizations.