1：Experimental Design and Method Selection:

The study used RF magnetron sputtering with a PdEr-alloy target for film deposition, followed by rapid thermal annealing (RTA) for silicidation. Schottky barrier diodes (SBD) and cross-bridge Kelvin resistor (CBKR) methods were employed to evaluate Schottky barrier height and contact resistivity.

2：Sample Selection and Data Sources:

n-Si(100) substrates with resistivity of 1-10 Ωcm were used. Samples were cleaned using H2SO4:H2O2 = 4:1 (SPM) and HF:H2O = 1:100 (DHF) processes.

3：List of Experimental Equipment and Materials:

Equipment includes RF magnetron sputtering system, RTA system, XRD for crystallinity analysis, and 4-probe measurement setup. Materials include PdEr-alloy target (Pd:Er = 3:2, φ: 3 inch), TiN encapsulating layer, and Al for electrodes.

4：Experimental Procedures and Operational Workflow:

A 20 nm PdEr layer was deposited by RF sputtering at room temperature, followed by in-situ deposition of a 10 nm TiN layer. Silicidation was performed via RTA at 500°C for 5 min in N2/4.9%H2 ambient, with selective etching to remove unreacted metals. For CBKR, P ion implantation was done before silicidation.

5：9%H2 ambient, with selective etching to remove unreacted metals. For CBKR, P ion implantation was done before silicidation. Data Analysis Methods:

5. Data Analysis Methods: Schottky barrier height was extracted from J-V characteristics using the Schottky emission model. Contact resistivity was evaluated from V-I measurements of CBKR patterns, with linear extrapolation to zero contact area.