研究目的
To review recent advances in APCVD-based graphene synthesis and their applications in electronics and optoelectronics.
研究成果
APCVD is a promising method for large-scale, high-quality graphene synthesis, particularly on Cu substrates due to low carbon solubility. However, challenges include high-temperature requirements, defect formation, and incomplete mechanistic understanding. Future work should focus on optimizing growth conditions, reducing temperatures, and improving transfer techniques for better device integration.
研究不足
APCVD requires high temperatures (around 1000°C), which can damage insulating substrates and is experimentally expensive. Growth rates are low, leading to small domain sizes and potential defects. Understanding of growth mechanisms is incomplete, and controlling the number of graphene layers precisely remains challenging. Transfer processes from metal to dielectric substrates can degrade graphene quality.
1：Experimental Design and Method Selection:
The chapter reviews APCVD methods for graphene synthesis, involving high-temperature processes (around 1000°C) using catalytic metal substrates like Cu, Ni, Pt. It discusses growth mechanisms, including mass transport, surface reactions, and nucleation control.
2：Sample Selection and Data Sources:
Uses metal foils (e.g., Cu, Ni) as substrates, with precursors like CH4, H2, and Ar. Data from various studies are cited, including optical microscopy, SEM, Raman spectroscopy, and electrical measurements.
3：List of Experimental Equipment and Materials:
Includes tubular furnaces for APCVD, gas flow systems, metal substrates (Cu foils), precursors (CH4, H2, Ar), and analytical tools like OM, SEM, TEM, Raman spectrometer.
4：Experimental Procedures and Operational Workflow:
Involves steps such as substrate cleaning, annealing in Ar-H2 atmosphere, precursor injection (e.g., CH4 flow), growth at high temperatures, and cooling. Specific parameters like temperature (980-990°C), flow rates, and times are varied.
5：Data Analysis Methods:
Analysis of graphene quality using Raman spectra, optical microscopy for domain size, and electrical measurements like sheet resistance with four-point probe.
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