研究目的
To design and fabricate a lithography-free, planar, multilayer-based reflective color filter with high efficiency, high color purity, and wide viewing angle using a series connection of cavities (MIMIS structure) to generate RGB colors in reflection mode, which is not achievable with conventional Fabry-Perot resonators.
研究成果
The MIMIS-based color filter successfully achieves high-efficiency RGB color generation in reflection mode with improved angular insensitivity when using high-index materials like ZnO. Reflection amplitudes above 0.6 and minimal wavelength shifts (e.g., 43 nm for red at 60° p-polarization) demonstrate its effectiveness. This lithography-free approach is scalable and offers functionalities beyond conventional FP resonators, with potential applications in imaging, displays, and sensing.
研究不足
The angular dependency of the color filters, especially with Al2O3, limits practical applicability due to blue shifts at oblique angles. Fabrication complexity and material losses (e.g., in Ge layer) may reduce efficiency. The design is specific to visible light and may not extend easily to other wavelengths without re-optimization.
1：Experimental Design and Method Selection:
The study uses a metal-insulator-metal-insulator-semiconductor (MIMIS) multilayer design. Transfer matrix method (TMM) modeling is employed to select optimal materials and layer thicknesses. Finite-difference time-domain (FDTD) simulations are used to optimize geometries. Fabrication involves thermal evaporation and atomic layer deposition (ALD). Optical characterization includes reflection measurements and spectroscopic ellipsometry.
2：Sample Selection and Data Sources:
Silicon wafer samples are used, diced and cleaned. Materials include aluminum (Al), aluminum oxide (Al2O3), zinc oxide (ZnO), and germanium (Ge). Experimental permittivity data for Al and Al2O3 are extracted; Palik's data is used for Ge.
3：List of Experimental Equipment and Materials:
Equipment includes thermal evaporator, ALD tool (Cambridge Nanotech Savannah S100), FDTD software (Lumerical FDTD Solutions), in-house reflection setup with halogen lamp and spectrometer (Newport OSM2), spectroscopic ellipsometer (J.A. Woollam Co. Inc. V-VASE), SEM, AFM. Materials include Al, Al2O3, ZnO, Ge, Si wafer, Piranha solution, HF, Trimethylaluminum, Diethylzinc, water, N2 gas.
4：Experimental Procedures and Operational Workflow:
Fabrication: Clean Si wafer with Piranha and HF; deposit Al and Ge layers via thermal evaporation; deposit Al2O3/ZnO via ALD. Simulation: Use FDTD for 3D simulations with plane-wave excitation. Measurement: Normal incidence reflection with in-house setup; angular response with ellipsometer at 30°, 45°, 60° for S and P polarizations.
5：Data Analysis Methods:
Reflection spectra normalized to thick Al reference; absorption calculated as A = 1 - R; FWHM and wavelength shifts analyzed; color purity and efficiency evaluated.
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FDTD Software
FDTD Solutions
Lumerical
Used for optical simulations to optimize device geometries.
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Spectroscopic Ellipsometer
V-VASE
J.A. Woollam Co. Inc.
Used to measure reflection at different angles and polarizations, and to extract permittivity values.
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Thermal Evaporator
Used to coat Al and Ge layers via thermal evaporation technique.
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Atomic Layer Deposition Tool
Savannah S100
Cambridge Nanotech
Used to deposit Al2O3 and ZnO layers via ALD.
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Spectrometer
OSM2
Newport
Used to measure reflected light intensity in the characterization setup.
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Scanning Electron Microscope
SEM
Used to confirm the multilayer structure formation via cross-sectional imaging.
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Atomic Force Microscope
AFM
Used to evaluate layer roughness and top Ge layer thickness.
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Halogen Lamp
Used as the incident light source in the reflection measurement setup.
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Microscope
Integrated with the halogen lamp to collect reflected light.
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Personal Computer
PC
Used to extract and monitor data from measurements.
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