研究目的
To investigate the effect of growth conditions on the thickness of h-BN films via LPCVD and achieve thickness-tunable growth of large, continuous, and high-dielectric h-BN thin films for microelectronic applications.
研究成果
The optimized LPCVD method with an "enclosure" quartz-boat reactor enables thickness-tunable growth of ultra-large, continuous h-BN films with high dielectric breakdown strength (~10.0 MV cm?1), making them suitable for ultrathin microelectronic devices. Future work should address scalability and further improve film quality.
研究不足
The study is limited to LPCVD growth on Cu substrates; other substrates or methods were not explored. The "enclosure" reactor may have scalability issues for industrial applications, and the breakdown strength, while high, is still lower than exfoliated h-BN. Optimization focused on specific parameters, and long-term stability or integration into devices was not assessed.
1：Experimental Design and Method Selection:
The study used low-pressure chemical vapor deposition (LPCVD) with an optimized "enclosure" quartz-boat reactor to grow h-BN films on electropolished Cu foils, aiming to control nucleation and reduce defects.
2：Sample Selection and Data Sources:
High-purity Cu foils (
3：999% pure, 25 μm thick from Alfa Aesar) were used as substrates, and ammonia borane (NH3BH3) served as the precursor. List of Experimental Equipment and Materials:
Equipment included an LPCVD system, quartz boat reactor, DC power supply for electropolishing, SEM (Hitachi-SU6600), AFM (Bruker Dimension Icon), Raman spectrometer (Horiba LabRAM HR Evolution), XPS (Thermo Fisher Scientific ESCALAB Xi+), UV-visible spectrophotometer (Perkin-Elmer Lambda 950), HRTEM (JEOL JEM-2100Plus), and semiconductor test system (Keithley 4200SCS). Materials included Cu foils, ammonia borane, rosin, etching solutions (H2O2, HCl, ammonium persulfate), and solvents (acetone, isopropanol).
4：Experimental Procedures and Operational Workflow:
Cu foils were electropolished, placed in the quartz boat, annealed at 1000°C, and h-BN was grown under varied conditions (time, gas flow, pressure, precursor amount, sublimation temperature). Films were transferred using a rosin-assisted method and characterized. MIM capacitors were fabricated for electrical measurements.
5：Data Analysis Methods:
Thickness and roughness were measured via AFM and SEM, crystallinity via TEM and SAED, chemical composition via XPS and Raman spectroscopy, optical properties via UV-vis, and dielectric properties via I-V curves analyzed using Fowler-Nordheim tunneling theory.
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SEM
SU6600
Hitachi
Used to investigate the morphology of h-BN films.
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AFM
Dimension Icon
Bruker
Used to measure surface roughness and thickness of h-BN films.
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XPS
ESCALAB Xi+
Thermo Fisher Scientific
Used to detect binding energies of boron and nitrogen atoms.
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UV-visible spectrophotometer
Lambda 950
Perkin-Elmer
Used to measure absorption spectrum and calculate optical band gap.
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HRTEM
JEM-2100Plus
JEOL
Used to verify crystal structure and quality of h-BN film.
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Semiconductor test system
4200SCS
Keithley
Used to measure current-voltage curves for dielectric properties.
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Cu foil
10950
Alfa Aesar
Used as the deposition substrate for h-BN film growth.
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Ammonia borane
Aldrich
Used as the precursor for h-BN synthesis.
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Raman spectrometer
LabRAM HR Evolution
Horiba
Used to analyze vibration modes of h-BN films.
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DC power supply
Used for electropolishing of Cu foils.
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