1：Experimental Design and Method Selection:

The study used pulsed charge-voltage measurements to investigate negative capacitance in HZO films with Al2O3 layers, based on Landau theory to model the S-shaped polarization-electric field curve.

2：Sample Selection and Data Sources:

MFM and MFIM capacitors were fabricated on Si substrates with varying thicknesses of HZO (7.7 nm and 11.3 nm) and Al2O3 (0.5 nm to 4 nm).

3：7 nm and 3 nm) and Al2O3 (5 nm to 4 nm). List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: Equipment includes a BESTEC physical vapor deposition tool, Oxford Instruments OpAL ALD tool, Bruker D8 Discover X-ray diffractometer, Zeiss Libra 200 TEM, Cascade Microtech Probe Station, Keithley 4200 SCS with 4225-PMU, HP 8110A pulse generator, and Tektronix TDS7154B digital oscilloscope. Materials include TiN electrodes, HZO and Al2O3 films deposited by ALD, and precursors like TEMA-Hf, TEMA-Zr, TMA, and water.

4：Experimental Procedures and Operational Workflow:

Fabrication involved sputtering TiN electrodes, ALD of HZO and Al2O3, annealing at 600°C, and defining capacitor pads. Electrical measurements included standard P-E hysteresis, capacitance-voltage, and pulsed Q-V measurements using pulse generators and oscilloscopes.

5：Data Analysis Methods:

Data were analyzed by integrating current to obtain charge, calculating electric fields, and fitting to Landau theory equations to extract parameters like α and β.