研究目的
To develop an in-situ thermal diffusivity testing structure and method for polysilicon thin films that is compatible with MEMS fabrication and process control monitoring, without requiring extra processes or stringent environmental conditions.
研究成果
The in-situ testing method is feasible, compatible with PCM in IC fabrication, and provides reliable thermal diffusivity measurements for conductive thin films under normal conditions, with potential modifications for nonconductive materials.
研究不足
The method is not applicable to nonconductive materials or materials with very high resistance. It assumes an ideal heat sink substrate and may be affected by process variations.
1:Experimental Design and Method Selection:
The method involves using doubly clamped beams as thermal resistors, applying current to heat the beams, and measuring resistance changes to derive thermal diffusivity through a thermodynamic model.
2:Sample Selection and Data Sources:
Polysilicon thin film beams fabricated using CMOS-compatible processes, with geometric parameters specified.
3:List of Experimental Equipment and Materials:
Keithley 4200-SCS Parameter Analyzer as current source, Agilent InfiniiVision 3032A Digital Oscilloscope for voltage measurement, probes, and fabricated beams.
4:Experimental Procedures and Operational Workflow:
Apply constant current I0 to heat the beam, switch to small current It, measure voltage over time, fit data to linear equation to find time constant, and calculate thermal diffusivity using derived formulas.
5:Data Analysis Methods:
Linear fitting of lnV(t) vs. t to determine slope (-1/τ), then use Equation (15) to compute thermal diffusivity α.
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