1：Experimental Design and Method Selection:

The study uses microwave detected photoconductivity (MDP) for contactless lifetime measurements on oxidized float zone silicon substrates to assess oxide quality and furnace homogeneity. High-resistivity float zone substrates are chosen for their high bulk quality, ensuring that measured effective lifetime is dominated by interface recombination. Capacitance-voltage measurements are also conducted for comparison.

2：Sample Selection and Data Sources:

High-resistivity float zone silicon wafers from three different batches (A, B, C) with similar resistivity (>1.0 kΩ cm), orientation (<100>), thickness (450 μm), and diameters (100 mm or 150 mm) are used. Wafers are oxidized in a horizontal furnace with a thermal dry oxide of approximately 200 nm grown at 1030°C, followed by in situ post-oxidation annealing under nitrogen atmosphere.

3：0 kΩ cm), orientation (<100>), thickness (450 μm), and diameters (100 mm or 150 mm) are used. Wafers are oxidized in a horizontal furnace with a thermal dry oxide of approximately 200 nm grown at 1030°C, followed by in situ post-oxidation annealing under nitrogen atmosphere. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: Equipment includes a horizontal oxidation furnace, MDPmap setup (Freiberg Instruments) for lifetime measurements, IR laser diodes (977 nm) for optical excitation, and a B1500A Semiconductor Device Analyzer (Agilent) for capacitance-voltage measurements. Materials include float zone silicon wafers, aluminum for MOS capacitors, and gases for oxidation and annealing processes.

4：Experimental Procedures and Operational Workflow:

Oxidation runs are performed with intentional furnace leakage in some cases. Lifetime mappings are conducted with 2 mm raster resolution and edge exclusion of 5 mm, using an optical generation rate of 5.6 × 10^21 cm^{-3} s^{-1}. Generation rate dependent lifetime measurements are done at wafer centers. Capacitance-voltage measurements are performed on fabricated MOS capacitors.

5：6 × 10^21 cm^{-3} s^{-1}. Generation rate dependent lifetime measurements are done at wafer centers. Capacitance-voltage measurements are performed on fabricated MOS capacitors. Data Analysis Methods:

5. Data Analysis Methods: Effective lifetime is calculated from exponential decay of photoconductivity using linear regression. Median values and interquartile ranges are used for evaluation. Capacitance-voltage data are analyzed to extract fixed oxide charge and interface state density, with corrections for parasitic effects.