摘要： Halide perovskite based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because their switching material—halide perovskite—has received considerable attention in recent years. Among the electrical characteristics of the material, its current–voltage (I–V) hysteresis, which may occur due to defect formation and migration, means that ReRAM can employ halide perovskites as a resistive switching material. Many studies have been conducted on resistive switching materials; however, the investigation of halide perovskites for ReRAM devices is still in the early research stages; therefore, the application of halide perovskites in ReRAM devices is a topic worth studying. Herein, we introduce halide perovskites and their operating mechanism within a ReRAM device. Moreover, recent notable achievements along with future challenges have been reviewed.