研究目的
To investigate the effect of electron radiation on the electrical parameters of Schottky diodes with and without a ZnO interlayer, and to determine if the ZnO interlayer improves radiation tolerance.
研究成果
The ZnO interlayer significantly improves the radiation tolerance of Schottky diodes, as evidenced by smaller changes in electrical parameters (ideality factor, barrier height, series resistance) after electron irradiation compared to diodes without the interlayer. This suggests that ZnO thin films can enhance the stability and longevity of optoelectronic devices in radiation environments.
研究不足
The study is limited to electron radiation effects at specific doses (25, 50, 75 gray) and room temperature conditions. It does not explore other types of radiation or higher doses, and the mechanisms behind defect formation and interface states could be further optimized or studied in more depth.
1：Experimental Design and Method Selection:
The study involved fabricating Schottky diodes with and without a ZnO interlayer, exposing them to electron radiation at various doses, and measuring electrical parameters using I-V characteristics. Theoretical models such as thermionic emission and Norde's function were employed for parameter calculation.
2：Sample Selection and Data Sources:
n-type Si substrates were used. ZnO thin films were deposited on some substrates via RF magnetron sputtering. Diodes were fabricated by depositing metal contacts.
3：List of Experimental Equipment and Materials:
Equipment includes RF magnetron sputtering system, X-ray diffractometer (X'Pert PRO), scanning electron microscopy (SEM, Zeiss Sigma 300), atomic force microscope (AFM, Hitachi 5100 N), UV-visible spectrophotometer (Lambda35), surface profilometer (KLA Tencor P7), thermal evaporator, electron radiation tester (Varian Trilogy model of LINAC), and picoammeter/voltage source (Keitley 487). Materials include n-Si substrates, ZnO target (99.99% purity), Au-Sb alloy, and Zn metal.
4：7). Materials include n-Si substrates, ZnO target (99% purity), Au-Sb alloy, and Zn metal. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Substrates were cleaned using RCA1 and RCA2 procedures and HF solution. ZnO films were sputtered at specified conditions. Ohmic and Schottky contacts were deposited by thermal evaporation. Diodes were irradiated at 25, 50, and 75 gray doses. I-V measurements were conducted before and after irradiation.
5：Data Analysis Methods:
Electrical parameters (ideality factor, barrier height, series resistance) were calculated from I-V data using equations based on thermionic emission theory and Norde's method. Structural and optical properties were analyzed using XRD, SEM, AFM, and UV-visible spectroscopy.
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X-ray diffractometer
X'Pert PRO
PANalytical
Analyze structural properties of ZnO thin films using Cu-Kα radiation.
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Scanning electron microscopy
Sigma 300
Zeiss
Determine morphological properties and grain size of ZnO thin films.
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Atomic force microscope
5100 N
Hitachi
Analyze surface morphology and roughness of ZnO thin films.
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UV-visible spectrophotometer
Lambda35
PerkinElmer
Perform optical measurements to determine bandgap of thin films.
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Surface profilometer
P7
KLA Tencor
Measure film thickness of deposited ZnO layers.
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Electron radiation tester
Trilogy
Varian
Expose diodes to electron irradiation at specified doses.
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Picoammeter/Voltage Source
487
Keitley
Conduct I-V measurements of diodes before and after irradiation.
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RF magnetron sputtering system
Deposit ZnO thin films on n-Si substrates.
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Thermal evaporator
Deposit Au-Sb ohmic contacts and Zn metal contacts.
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