研究目的
Investigating the nanostructuring of silicon samples using Ag ion implantation through self-assembled polystyrene masks to create ordered arrays of amorphized regions and Ag nanoparticles, and studying their optical properties, particularly surface plasmon resonance.
研究成果
Ag ion implantation through PS masks successfully creates ordered arrays of amorphized Si regions and Ag nanoparticles. The optical properties show a surface plasmon resonance peak that shifts with ion fluence, well-described by Maxwell-Garnett's theory. The method is efficient for large-area nanostructuring but is limited by mask deformation at higher fluences.
研究不足
The deformation and closing of PS mask openings at higher ion fluences limit further ion penetration, restricting the maximum achievable Ag concentration and nanoparticle size. The technique may not be suitable for very high fluence applications without mask degradation. Optical property modeling discrepancies indicate unaccounted factors like changes in substrate density and refractive index.
1：Experimental Design and Method Selection:
The study uses nanosphere lithography with self-assembled polystyrene (PS) masks for high-throughput patterning. Ag ion implantation is employed to modify silicon substrates selectively through mask openings. Theoretical models include SRIM-2008 for ion range simulations and Maxwell-Garnett's theory for optical property analysis.
2：Sample Selection and Data Sources:
Monocrystalline (100) p-type Si wafers with a thickness of ～550 μm are used as substrates. PS nanospheres with a diameter of ～150 nm are self-assembled on the Si surface.
3：List of Experimental Equipment and Materials:
Equipment includes a spin coater (Model P-6708D, Specialty Coating Systems), ion implanter for Ag ions, SEM (Tescan MIRA3 and FEI SCIOS Dual Beam), TEM (FEI Talos F200X), RBS setup with 1 MeV 4He++ ion beam, and UV-VIS ellipsometer (HORIBA-Jobin Yvon). Materials include PS spheres, Si wafers, and Ag ions.
4：Experimental Procedures and Operational Workflow:
PS spheres are dispersed in a water-ethanol solution and spin-coated onto Si wafers. Ag ion implantation is performed at 60 keV with fluences from 1×10^15 to 2×10^16 ions/cm^2. Post-implantation, PS masks are removed via oxygen plasma etching. Characterization involves SEM, TEM, RBS, and optical spectroscopy.
5：Post-implantation, PS masks are removed via oxygen plasma etching. Characterization involves SEM, TEM, RBS, and optical spectroscopy.
Data Analysis Methods:
5. Data Analysis Methods: Data analysis uses SRIM for ion range calculations, WiNDF for RBS spectrum simulation, and DeltaPsi2 software for ellipsometric data fitting. Particle size distributions are analyzed from TEM images, and optical spectra are interpreted using Maxwell-Garnett's theory.
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