研究目的
To understand and describe the receptor function responsible for gas sensing focusing on the adsorption-desorption mechanisms that play a key role in semiconductor gas sensors, by re-examining the adsorption isotherms for chemisorption on semiconductors based on Wolkenstein theory.
研究成果
The study derived corrected adsorption isotherms for dissociative chemisorption, identifying inaccuracies in existing models. Calculations for tin oxide showed that band bending and coverage depend on pressure and doping, and sensor conductivity deviates from a simple power law due to band bending and tunneling effects. This provides a more accurate theoretical foundation for understanding semiconductor gas sensor behavior.
研究不足
The model assumes independent adsorption centers with no interactions, uniform doping, and neglects intrinsic surface states. It is specific to oxygen chemisorption on n-type semiconductors like tin oxide and may not account for all real-world complexities such as grain boundaries, diffusion effects, or other gas interactions.
1：Experimental Design and Method Selection:
The study is theoretical and computational, involving the derivation of adsorption isotherms for non-dissociative and dissociative chemisorption using Wolkenstein theory. It includes modeling band bending and adsorbate coverages for tin oxide as a case study.
2：Sample Selection and Data Sources:
No physical samples were used; the work is based on theoretical models and parameters from literature for tin oxide (SnO2).
3：2).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: No experimental equipment or materials were used as it is a theoretical paper.
4：Experimental Procedures and Operational Workflow:
The methodology involves mathematical derivations of isotherms, solving electroneutrality conditions to determine band bending, and calculating conductivity and sensitivity based on the models.
5：Data Analysis Methods:
Analytical and numerical methods were used to solve equations, with parameters set to typical values for tin oxide (e.g., T=600 K, m=0.3m0, ε=12.3ε0, N*=10^19 m^-2, ν=10^13 s^-1, EsC-EA=1 eV, q0=0.1 eV).
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