1：Experimental Design and Method Selection:

The study used RF magnetron sputtering for film deposition, with characterization via X-ray diffraction (XRD), Raman scattering (RS), atomic force microscopy (AFM), photoluminescence (PL), and infrared (IR) reflection spectroscopy to analyze structural, optical, and electrical properties.

2：Sample Selection and Data Sources:

Tb-doped ZnO films were deposited on Si (001), fused SiO2, and c-cut Al2O3 substrates in one deposition run. Undoped ZnO films on Si were also prepared for comparison. Tb content was estimated using energy-dispersive X-ray spectroscopy.

3：List of Experimental Equipment and Materials:

Equipment included an RF magnetron sputtering system, Thermo Scientific X'TRA diffractometer, NanoScope IIIa Dimension 3000 AFM, Horiba Jobin-Yvon T64000 Raman spectrometer, Bruker Vertex 70 V FTIR spectrometer, and FluoroLog-3 spectrofluorometer. Materials included terbium oxide (Tb4O7) pellets, ZnO target, Si, SiO2, and Al2O3 substrates.

4：Experimental Procedures and Operational Workflow:

Substrates were cleaned ultrasonically and with propanol, then dried. Films were deposited at 100°C with a power density of

5：91 W/cm2 for 1 hour. Thicknesses were measured, and Tb content was analyzed. Morphology was studied via AFM, structure via XRD, optical properties via RS, PL, and IR reflection, and electrical properties via direct current measurements. Data Analysis Methods:

XRD data were analyzed for peak positions and stress; AFM for surface roughness and grain size; RS for phonon modes and stress; PL for emission intensities; IR reflection spectra were simulated to extract carrier concentration and mobility using dielectric constant models.