1：Experimental Design and Method Selection:

TiO2 films were prepared on Si substrates with natural oxide layers using RF magnetron sputtering, followed by annealing. The bonding state was analyzed using HRTEM, EDX, AFM, XRD, and GPA with Hooke's law for stress calculation.

2：Sample Selection and Data Sources:

Monocrystalline silicon wafers were used as substrates, cleaned ultrasonically in ethanol. Data were obtained from TEM images, EDX spectra, AFM scans, and XRD patterns.

3：List of Experimental Equipment and Materials:

Equipment includes RF magnetron sputtering system, transmission electron microscope (Tecnai G2 F20), energy dispersive X-ray spectrometer, atomic force microscope (CSPM4000SPM), X-ray diffractometer (D/Max-2500), and GPA software (Gatan DigitalMicrograph). Materials include Si wafers, TiO2 target, argon gas, and ethanol.

4：Experimental Procedures and Operational Workflow:

Clean Si wafer, deposit TiO2 film via sputtering (200 W, 1 hour, 1.2 MPa argon pressure), anneal at 800°C for 2 hours, characterize with TEM, EDX, AFM, XRD, perform GPA on HRTEM images to calculate strain fields, and use Hooke's law to determine stress distributions.

5：2 MPa argon pressure), anneal at 800°C for 2 hours, characterize with TEM, EDX, AFM, XRD, perform GPA on HRTEM images to calculate strain fields, and use Hooke's law to determine stress distributions. Data Analysis Methods:

5. Data Analysis Methods: Strain fields (εxx, εyy, εxy) were calculated from geometric phase images using GPA software. Stress was computed using Hooke's law with elastic moduli and Poisson's ratios for Si and TiO2. Statistical analysis of strain values was performed.