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[IEEE 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Khulna, Bangladesh (2019.12.20-2019.12.22)] 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Thickness and Doping Optimization of CdS/CIGS P-i-N Photovoltaic Cell: Envisioned for Enhanced Conversion Efficiency
摘要： In this work, a high efficiency CdS/CIGS P-i-N solar cell has been proposed and delineated incorporating CIGS as an intrinsic layer and an immensely doped CIGS as a graded p-type layer. As ensued from our simulation, a conversion efficiency of 20.94% is attained with the coalescence of highly doped TCO layer (ZnO), n-type CdS window layer, CIGS as intrinsic layer and an ungraded (fixed doping concentration) CIGS absorber layer. It is construed that after introducing the graded (several doping concentrations) p-type absorber layer, the efficiency conspicuously amplified to a significant extent. At AM 1.5 solar radiation, the proposed graded cell structure yields an open circuit voltage (Voc) of 0.726 V, a short circuit current density (Jsc) of 57.72 mAcm-2, a maximum power density of 35.27 mWcm-2 and a fill factor (FF) of 84%, conforming to an overall efficiency (η) of 29.69%.
关键词： Intrinsic Layer,p-i-n solar cell,Graded Absorber Layer,CdS/CIGS,BSF layer
更新于2025-09-23 15:21:01
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Deposition and characterization of earth abundant <scp>CuZnS</scp> ternary thin films by vacuum spray pyrolysis and fabrication of <scp>pa??</scp> CZS/ <scp>na??AZO</scp> heterojunction solar cells
摘要： We report fabrication of solar cell device <ITO/AZO/i-ZnO/CZS/Al> with Copper Zinc Sulfide (CZS) thin films as absorber layer. CZS thin films prepared using chemical spray pyrolysis technique at a pressure of 10?3 mbar at different substrate temperatures. Structural, morphological, optical, compositional and electrical properties of as prepared films are investigated. Structural analysis shows crystalline nature with mixed phase containing CuS-ZnS binary composite. Atomic Force Microscopy analysis shows the average particle size of 88 nm. Value of work function obtained from ultraviolet photoelectron spectroscopy is 4.58 eV. The band gap of the as-prepared films varies from 1.62 to 2.06 eV. Hall effect measurement proves the p-type nature for all the deposited films. Samples deposited at 350°C shows carrier concentration of 1021 cm?3 and electrical conductivity of 526 S cm?1. Solar cell device structure of <ITO/AZO/i-ZnO/CZS/Al> has been fabricated using the CZS sample deposited at 350°C. The cell parameters obtained are Voc = 0.505 V, Isc = 4.97 mA/cm2, FF = 64.28% and η = 1.6 ± 0.05%.
关键词： solar cell,heterojunction,ternary compound,thin film,absorber layer,vacuum spray pyrolysis
更新于2025-09-23 15:21:01
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Plasmonic solar cells using mohite Cu2SnS3 nanoparticles
摘要： In this paper, we introduce a new technique for the synthesis of mohite copper tin sulphide (Cu2SnS3) nanoparticles. The method employed is cost effective, non-vacuum, room temperature colloidal synthesis. Here two sulphur sources are used in the synthesis process, sodium sulphide and thioacetamide where the latter is assumed responsible for the mohite crystal structure. The as-prepared sample was characterized using XRD, Laser Raman Spectrometer, SEM/EDS, UV–VIS-NIR spectrophotometer and FTIR spectrophotometer. The sample synthesized appears greenish-black with a metallic lustre. Due to the presence of free electrons on the nanoparticle surface, surface plasmon resonance occurs at 807 nm. Using the uncertainty principle, the plasmon lifetime has been calculated to be 42.5 ns, which is a reasonably longer lifetime, enabling higher photon absorption. Thus mohite copper tin sulphide nanoparticles have a potential application in the absorber layer of low cost plasmonic solar cells.
关键词： Absorber layer,Surface plasmon resonance,Copper tin sulphide,Plasmonic solar cells,Mohite CTS
更新于2025-09-23 15:21:01
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Impact of Bi doping on CdTe thin films: Thermal annealing evolution of physical properties for solar cell absorber layer applications
摘要： To mitigate probability of instability and device degradation associated with traditional Cu doping and to tune required band gap as well as to reduce open circuit voltage loss to solar cell device, a study on evolution to the physical properties of Bi-doped CdTe films is reported. Thin films of CdTe:Bi 2% alloy are developed employing electron-beam deposition followed by air annealing. Structural studies reveal that films have preferred crystal growth along (111) plane and with annealing, films turned out to be polycrystalline. Absorbance of films is found to be affected with annealing where 450 °C annealed films show maximum absorbance. The current-voltage measurements show linear relationship reveal to ohmic contacts between the films and transparent conducting oxide substrate and conductivity is observed to be varied with annealing. The atomic force microscopy study indicates an increase in surface roughness with annealing (except for 300 °C). Our findings warrant that the optimized physical properties of CdTe:Bi 2% films annealed at 450 °C may play important role to enhance the solar cell device performance concerned.
关键词： Bismuth doping,Absorber layer,Air-annealing,Thin films,Cadmium telluride,Electron beam evaporation
更新于2025-09-23 15:19:57
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The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells
摘要： In this paper, we report the development of Cd-free bu?ers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the ?lms. The in?uence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) bu?er layers on the e?ciency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the ?rst results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120?C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certi?ed aperture area e?ciencies of 17.1% for 0.4 cm2 cells.
关键词： atomic layer deposition,Zn(O,S) thickness,Cu(In,Ga)(S,Se)2 absorber layer,Zn(O,S) ratio,Zn(O,S) temperature window,bu?er layer,solar cell
更新于2025-09-16 10:30:52
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Theoretical investigation on enhancement of output performance of CZTSSe based solar cell
摘要： CZTSSe offers cheap, environmental friendly and earth abundant material for solar devices, yet the record power conversion efficiency for such solar cells has stagnated at about 12 percent over the years. The main reason for low output voltage and overall performance is because of the extreme non radiative recombination in the heterojunction region. To find the overall optimization of solar cell and suitable buffer layer numerical simulation has been performed by SCAPS-1D software. Here, CZTSSe was used as a absorber layer, Al doped ZnO as a transparent conducting layer and ZnO as a window layer. CdS, Cd0.4Zn0.6S and ZnSe was used as a different buffer layer. The impact of thickness of absorber layer and buffer layer on Voc, Jsc, FF and efficiency has been investigated. Also, the effect of temperature on the above-mentioned parameter of the solar cell was studied.
关键词： Heterojunction,Buffer layer,Efficiency,CZTSSe,Solar devices,Absorber layer
更新于2025-09-16 10:30:52
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Highlights in Applied Mineralogy || 4. Microstructure analysis of chalcopyrite-type Cu2ZnSe4 and kesterite-type Cu2ZnSnSe4 absorber layers in thin film solar cells
摘要： Thin film solar cells equipped with polycrystalline compound semiconductors as functional layer for light absorption have continuously been improved in terms of solar energy conversion efficiency, such that they became a competitive alternative to well-established silicon-based solar cells. In 1905, Einstein published a comprehensive, physical description of the photoelectric effect [1] and thus provided the theoretical framework for upcoming research of photovoltaic technologies. The emergence of photovoltaic devices, however, only started about 50 years later, and for several decades, it persisted a niche technology mainly for aerospace applications. Among others, silicon (Si) was known to belong to the group of (extrinsic) elemental semiconductors, and due to its abundance, it was the very first absorber material to be used in solar cells. Triggered by the oil crisis in the 1970s, the research of solar energy conversion technologies finally got a tremendous stimulus. As a result, research not only of silicon-based solar cells but also of other absorber layer materials based on compound semiconductors have been much more extensively endeavored. The latter were also brought into focus in order to address some severe drawbacks of silicon-based solar cells. First of all, the high energy consumption in fabricating single crystal silicon results in a quite long energy amortization time. In addition, the requirements on crystallinity and purity are extremely high while a considerable amount of material is wasted upon slicing silicon wafers. Also, during the growth of silicon single crystals a certain concentration of dopants has to be incorporated in order to induce either extrinsic p-type or n-type conductivity. Despite the energy of the band gap of silicon fitting quite well with the optimal energy determined by the solar spectrum, silicon is an indirect semiconductor whose photonic electron transition from the valence band to the conduction band needs to be assisted by a phononic momentum transfer. This requirement of coincidence between a photon of appropriate energy being absorbed and a phonon transferring impulse to the electron leads to a reduced probability of events of photoelectric charge carrier generation. Correspondingly, the absorber thickness must be augmented in order to compensate the low absorption coefficient. These aforementioned issues, eventually, gave rise to reconsider photovoltaic technologies, being both economical and ecological reasonably applicable in a more widely spread manner. These demands have paved the way for thin film solar cell technologies using compound semiconductors. Those compound semiconductors are intrinsically conductive, and they possess a higher absorption coefficient due to direct electron band transitions (Fig. 4.1).
关键词： kesterite-type,chalcopyrite-type,absorber layer materials,light absorption,microstructure analysis,photovoltaic technologies,solar energy conversion efficiency,compound semiconductors,thin film solar cells,silicon-based solar cells
更新于2025-09-16 10:30:52
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Studies on the developing of Nano-Structured Cu2S film for photovoltaic application
摘要： Current efforts have been given to develop new photovoltaic materials to improve the efficiency with reducing cost. The factors that have been taken into account in developing new photovoltaic materials include: a suitable energy band gap, the possibility of depositing the material using low cost deposition methods, abundance of the elements and low environmental costs with respect to the synthesis of the elements, production, operation and disposal of modules. It’s been a long time that continuous efforts has been given to find out the most appropriate material to be employed as absorber material for solar cell and some advanced material has been proposed too as potential solar cell material. Here in our present study we have taken Cu2-xS as a suitable p-type absorber layer material but the formation of stable Cu2-xS film was being difficult task. Different researchers proposed different methods among them we have found the elemental stacked layer deposition method is one of the promising technique. But this technique requires further optimization on thickness and layer no’s to get the best result with required stoichiometry. With this context we have tried to optimize the thickness and layer no’s for developing multilayer Cu2-xS thin film on the glass substrate by physical vapour deposition technique. The results obtained in this method shows that the optimum numbers of layer is 10 ensures formation of crystalline Cu2S structure with optical band gap is around 1.65 eV to 1.85 eV by different characterization technique like XRD, EDX, SEM, Spectrophotometry and PL. The I-V characteristic of Schotkey junction using silver and bulk resistance (ρb) with the sample shows semiconductor behaviour of the same. To the best of our knowledge this is the first time such type of nano-structured Cu2S film fabrication is reported.
关键词： Cu2S,Elemental stacked layer,Absorber layer,Optimization,Physical vapour deposition,Band gap
更新于2025-09-12 10:27:22
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Photomultiplication Type Broad Response Organic Photodetectors with One Absorber Layer and One Multiplication Layer
摘要： Broad response organic photodetectors (OPDs) with photomultiplication (PM) effect are achieved with one absorber layer and one multiplication layer. The response range of the PM-OPDs is primarily determined by materials in the absorber layer, the external quantum efficiency (EQE) of the PM-OPDs is mainly controlled by the multiplication layer. Here, double-layered PM-OPDs were designed with the structure of ITO/ZnO/PM6:Y6/PC71BM:P3HT (100:5, wt/wt)/Au, where PM6:Y6 is employed as absorber layer and PC71BM:P3HT is used as multiplication layer. The optimal PM-OPDs exhibit broad response covering 350-950 nm. Meanwhile, the optimal PM-OPDs exhibit the largest EQE value of ~1200% and the maximum specific detectivity (D*) of ~6.8 × 10-12 cm Hz1/2 W-1 under 10 V bias. This double-layered approach may be a smart strategy to realize PM-OPDs with easily adjustable response range.
关键词： Organic photodetectors,Photomultiplication,Absorber layer,Multiplication layer,Broad response
更新于2025-09-12 10:27:22
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p-type Cu3BiS3 thin films for solar cell absorber layer via one stage thermal evaporation
摘要： Ternary copper sulphides, especially copper-bismuth-sulphide (Cu-Bi-S), are alternative solar absorber materials due to their earth-abundant and non-toxic constituent elements, compared to the conventional copper indium gallium sulphide and cadmium telluride films. In this study, Cu-Bi-S thin films were deposited onto soda lime glass substrates using a one stage co-evaporation process from Cu2S and Bi2S3 sources, with the deposition temperatures varied from room temperature to 400°C. X-ray diffraction analysis confirmed that Cu3BiS3 was the dominant phase in the Cu-rich films, and the crystalline quality of the films was significantly improved with increasing the deposition temperature. An optical bandgap of 1.4 eV was achieved for the film deposited at 400°C, which demonstrated a Hall mobility of 3.95 cm2/V-s and a carrier concentration of 7.48 × 1016 cm-3. Cu3BiS3 films deposited at 375 and 400°C were implemented into superstrate solar cell structures (glass/ITO/n-CdS/p-Cu3BiS3/Al).
关键词： p-Cu3BiS3,optical band gap,thermal co-evaporation,thin film solar cell,absorber layer
更新于2025-09-12 10:27:22