- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
44.2: <i>Invited Paper:</i> Printed Polymer TFTs Towards Low-Cost Backplane Production
摘要： We present Merck’s new formulation and material developments enabling high-volume and high-throughput printing techniques to be used for cost-effective electronic circuitry and backplane production. Performance at TFT array level in excess of 2 cm2/Vs, comparable to spin coating is demonstrated at Gen1 scale and 50 ppi resolution, using a hybrid combination of conventional lithographic steps and direct gravure printing.
关键词： active-matrix backplane,Organic semiconductors,gravure,printed thin-film transistors
更新于2025-09-23 15:22:29
-
Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment
摘要： This paper focuses on the dimensioning of a very bright full color 10 μm-pitch light-emitting device (LED) microdisplay for avionics application. Starting from the specifications of head-mounted display to be used in an augmented reality optical system, a theoretical approach is proposed that enables predicting the specifications of the main technology building blocks entering into the microdisplay manufacturing process flow. By taking into account various material and technological parameters, kept as realistic as possible, it is possible to assess the feasibility of a very bright LED microdisplay (1 Mcd/m2 full white) and to point out the main limitations. The theoretical specifications are then compared with the technical results obtained so far in the framework of the H2020 Clean Sky “HILICO” project. It shows that 350 000 cd/m2 of white emission may be accessible with the present gallium nitride (GaN)-micro-LED technology provided a color conversion solution with stable external quantum efficiency of 30% is available. Beyond such level of luminance, the inherent limitations of driving circuit (4 V, 15 μA per pixel) commands working with materials enabling higher external quantum efficiency (EQE). In particular, 10-μm-pitch micro-LEDs with electroluminescence EQE of 15% and color conversion EQE approaching 60% are needed, opening the way to future challenging material and technology research developments.
关键词： active matrix,high luminance,microdisplay,GaN,color conversion
更新于2025-09-23 15:21:01
-
P‐9.14: High transparent Active matrix Mini‐LED Full Color Display with IGZO TFT Backplane
摘要： In this paper, we presented a active matrix Mini LED full color display with high transmittance over 60%. A 8-inch display with RGB Mini-LED with IGZO TFT backplane was demonstrated, which is 46 PPI pixel resolution and 256 grayscales and the pixel pitch is less than 0.55mm. It is the first time to realized the full color display based on RGB Mini-LEDs and chip on glass with top gate structure IGZO TFT backplane. We believe that it is a good breakthrough and demonstration for developing large-size Micro LED backplane and displays.
关键词： High transparent,Full Color,IGZO Glass Backplane,Active Matrix,Transparent,Active matrix,Micro LED,RGB Mini-LED Chip
更新于2025-09-19 17:13:59
-
[IEEE 2019 International Energy and Sustainability Conference (IESC) - Farmingdale, NY, USA (2019.10.17-2019.10.18)] 2019 International Energy and Sustainability Conference (IESC) - Methodology for the implementation of photovoltaic energy in a microgrid
摘要： A new accurate voltage-programmed pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of 90 s, the pixel circuit was able to compensate for a 3 V threshold voltage ( ) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.
关键词： Active-matrix organic light-emitting diode (AMOLED),compensation,oxide thin-film transistor (TFT),amorphous silicon (a-Si)
更新于2025-09-19 17:13:59
-
34.3: <i>Invited Paper:</i> Printing Pixel Circuits on Light Emitting Diode Array for AMLED Displays
摘要： An active matrix light emitting display module integrated with carbon nanotubes control circuits was fully printed. The high performance of super pure single-chirality carbon nanotube TFT provides super bright and low power consumption technologies for indoor and outdoor augmented reality that are highly desirable for civil and military display applications.
关键词： Aerosol Jet Printing,Active Matrix LED Display Module,Single Chirality Semiconducting Single-Walled Carbon Nanotubes,Thin Film Transistors,Light Emitting Diode Array
更新于2025-09-16 10:30:52
-
A Multi-Phase Switched-Capacitor Converter for Fully Integrated AMLED Micro Display System
摘要： A fully-integrated switched-capacitor (SC) DC-DC converter is designed for powering up an active-matrix light-emitting diode (AMLED) micro-display system. Stacking-transistor technique with three voltage conversion ratios is utilized to handle the lithium-ion battery range of 2.6 V to 4.2 V and to reduce the switching loss. A 101-phase interleaving scheme is adopted such that (1) output voltage ripple ΔVO is significantly reduced; (2) no external output capacitor is needed; and (3) SC power-cells are physically cascaded to encircle the LED array and drivers to reduce conduction loss. Two test chips were designed in 0.18 μm 1P6M CMOS technology. The first chip is a test chip consisted of the SC converter only. The output voltage is 4.2V and the measured maximum ΔVO is 52 mV. The measured power density is 74.4 mW/mm2, peak efficiency is 81%, and maximum output power is 258 mW. The second chip is a system chip integrating the SC converter with the AMLED array and drivers using flip-chip packaging. The converter delivers a maximum power of 216 mW with a 78% peak efficiency in the SC mode and a 91% peak efficiency in the linear regulator mode.
关键词： AMLED,micro-displays,voltage regulator,LED driver,active matrix,SC converter,DC-DC converter,μ-displays,multiphase interleaving,battery-connected,switched-capacitor converter
更新于2025-09-16 10:30:52
-
Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays
摘要： This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.
关键词： low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs),Active-matrix organic light-emitting diode (AMOLED),leakage current prevention
更新于2025-09-16 10:30:52
-
8.3: <i>Invited Paper:</i> Ultra High Resolution Display for Digital Holography
摘要： Ultra high resolution display panels are one of the technical trends for future display and essential for the realization of digital hologram. Two approaches for the development toward 1um pixel pitch are introduced. SLM panel with 3μm pixel pitch based on reflected TFT-LCD was fabricated. Reconstructed hologram images were successfully demonstrated. SLM based on phase change materials was under development. In this case the driving circuitry was consist of Si CMOS backplane. Due to the scalability of PCM materials, accomplishment of pixel pitch with 1μm is very promising.
关键词： TFT-LCD,Spatial Light Modulator,Ultra high resolution,Holography,Phase modulation,Active-matrix displays,TFTs,Phase Change Materials
更新于2025-09-12 10:27:22
-
A monolithically integrated micro-LED display based on GaN-on-Silicon substrate
摘要： A monolithic micro-light-emitting-diode (LED) display technology was proposed using a gallium-nitride-on-silicon substrate. An active matrix (AM) display was realized by interconnecting nitride-based LEDs as display pixels with silicon (Si) thin-film-transistors (TFTs) as driving circuitries. Metal-oxide semiconductor TFTs were fabricated on Si surface which had been exposed after the dry etching of LED epitaxial layer. The mobility and sub-threshold slope were measured as 354.3 cm2/Vs and 0.64 V/dec, respectively. A 150 pixel-per-inch 0.6-inch monolithic display was demonstrated with a 60 x 60 pixel-array AM display by an integration technology on the same substrate.
关键词： micro-LED,monolithic integration,active matrix display,GaN-on-Silicon
更新于2025-09-12 10:27:22
-
30.2: <i>Invited Paper:</i> A RGB chip Full Color Active Matrix Micro‐LEDs Transparent Display with IGZO TFT Backplane
摘要： In this paper, the first time reported the full color active matrix micro-LEDs (AMLEDs) display with high transparent over 40% which is based on top gate IGZO TFT (Thin film transistor) backplane. This AMLEDs display was successfully developed with flip chip RGB micro-LEDs that can achieve more than 108% NTSC gamut, while the display is also brighter than 400nits.
关键词： micro-LEDs,Active Matrix,High Transparent,Full Color,IGZO TFT backplane
更新于2025-09-11 14:15:04