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- 2017
- spectral reconstruction
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Power Cycling of Commercial SiC MOSFETs
摘要： The robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from three different manufacturers is investigated, with silicon IGBTs serving as reference. The power cycling method, especially the junction temperature measurement and best practices to ensure its accuracy, is described. The results give insight into reliability and variability as well as aging behavior and failure modes. We ?nd a large variability between samples, both in initial characteristics and measured cycling lifetime, as well as signs of semiconductor device degradation. There is a signi?cant spread in the extent of the variability, in the average and minimum observed lifetime, as well as in the failure mode. Some samples fail quickly due to bond wire defects, some due to semiconductor degradation, while others show very long lifetimes.
关键词： power cycling,SiC MOSFETs,variability,reliability,aging behavior,failure modes
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Thermally Triggered SiC MOSFET Aging Effect on Conducted EMI
摘要： In this paper, thermally triggered SiC MOSFET aging effect on SiC based boost PFC converter’s conducted EMI is investigated. Existing EMI evaluation and suppression studies are mostly based on power devices at healthy state. This study provides a comprehensive EMI evaluation at different state of health of SiC MOSFET used in continuous conduction mode (CCM) Boost PFC converter. For this purpose, SiC MOSFET samples are exposed to accelerated aging and the corresponding device degradations are triggered by thermal stresses. To study device characteristics at different state of health, devices under test (DUT) electrical parameters and switching transients are evaluated over aging to support SiC based AC/DC converter’s conducted EMI discussion. Respectively, device aging effect on differential mode (DM) noise and common mode (CM) noise changes are discussed in detail. An 800W single phase CCM Boost PFC prototype is built to evaluate both DM and CM noise in band B frequency range (150kHz~30MHz) with experimental testing results. According to the study, high frequency noise decrement is observed after SiC MOSFET is thermally aged.
关键词： thermal stress,power factor correction (PFC),Accelerated aging,SiC power MOSFET,EMI/EMC
更新于2025-09-04 15:30:14