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Impact of Bi doping on CdTe thin films: Thermal annealing evolution of physical properties for solar cell absorber layer applications
摘要： To mitigate probability of instability and device degradation associated with traditional Cu doping and to tune required band gap as well as to reduce open circuit voltage loss to solar cell device, a study on evolution to the physical properties of Bi-doped CdTe films is reported. Thin films of CdTe:Bi 2% alloy are developed employing electron-beam deposition followed by air annealing. Structural studies reveal that films have preferred crystal growth along (111) plane and with annealing, films turned out to be polycrystalline. Absorbance of films is found to be affected with annealing where 450 °C annealed films show maximum absorbance. The current-voltage measurements show linear relationship reveal to ohmic contacts between the films and transparent conducting oxide substrate and conductivity is observed to be varied with annealing. The atomic force microscopy study indicates an increase in surface roughness with annealing (except for 300 °C). Our findings warrant that the optimized physical properties of CdTe:Bi 2% films annealed at 450 °C may play important role to enhance the solar cell device performance concerned.
关键词： Bismuth doping,Absorber layer,Air-annealing,Thin films,Cadmium telluride,Electron beam evaporation
更新于2025-09-23 15:19:57
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Overcoming consistency constrains of ITO/ZnO/P3HT:PCBM/Ag solar cell by open air annealing and its systematic stability study under inborn conditions
摘要： Focusing on simplicity and industrial viability, polymer solar cells with configuration indium tin oxide (ITO)/ZnO/P3HT:PCBM/Ag were fabricated and characterized. Differing from the usual trend of using glove box for polymer device fabrication, here electron transport and active layer of the devices were deposited and stored in open air atmosphere without any encapsulation. Effect of active layer thickness on device performance was analyzed. Choosing the optimum thickness of 220 ± 20 nm, a number of devices were fabricated with same configuration and the effect of annealing on the photovoltaic parameters was investigated. Unlike annealing studies reported in literature, particular emphasis was given here to study the influence of annealing in ambient atmosphere, at temperature of 50 °C, for 30 s. This short period, low temperature annealing enhanced the device parameters mainly short circuit current density and hence efficiency. Lifetime measurements were done by monitoring the device and measuring its J–V parameters periodically for 1 year. X-ray photoelectron spectroscopy depth profile analysis was employed to demonstrate that surface modified ZnO effectively hinders the diffusion of indium from ITO to active layer.
关键词： Stability study,ITO/ZnO/P3HT:PCBM/Ag,X-ray photoelectron spectroscopy,Polymer solar cells,Open air annealing
更新于2025-09-12 10:27:22