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Rear‐Passivated Ultrathin Cu(In,Ga)Se <sub/>2</sub> Films by Al <sub/>2</sub> O <sub/>3</sub> Nanostructures Using Glancing Angle Deposition Toward Photovoltaic Devices with Enhanced Efficiency
摘要： In this work, for the first time, the addition of aluminum oxide nanostructures (Al2O3 NSs) grown by glancing angle deposition (GLAD) is investigated on an ultrathin Cu(In,Ga)Se2 device (400 nm) fabricated using a sequential process, i.e., post-selenization of the metallic precursor layer. The most striking observation to emerge from this study is the alleviation of phase separation after adding the Al2O3 NSs with improved Se diffusion into the non-uniformed metallic precursor due to the surface roughness resulting from the Al2O3 NSs. In addition, the raised Na concentration at the rear surface can be attributed to the increased diffusion of Na ion facilitated by Al2O3 NSs. The coverage and thickness of the Al2O3 NSs significantly affects the cell performance because of an increase in shunt resistance associated with the formation of Na2SeX and phase separation. The passivation effect attributed to the Al2O3 NSs is well studied using the bias-EQE measurement and J–V characteristics under dark and illuminated conditions. With the optimization of the Al2O3 NSs, the remarkable enhancement in the cell performance occurs, exhibiting a power conversion efficiency increase from 2.83% to 5.33%, demonstrating a promising method for improving ultrathin Cu(In,Ga)Se2 devices, and providing significant opportunities for further applications.
关键词： nanostructure,CIGS solar cells,Al2O3 passivation layer,glancing angle deposition
更新于2025-09-19 17:13:59
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A high-efficiency and stable cupric oxide photocathode coupled with Al surface plasmon resonance and Al <sub/>2</sub> O <sub/>3</sub> self-passivation
摘要： The key to achieving high performance in photoelectrochemical (PEC) water splitting is the design of e?cient and stable photoelectrode structures. Herein, we firstly synthesized a novel and high-photoactivity CuO/Al photocathode and then the Al2O3 passivation layer was further introduced through a spontaneous oxidation process in air to protect the photocathode against photocorrosion. On account of the localized surface plasmon resonance (LSPR) of Al nanoparticles (NPs) in conjunction with surface passivation of the Al2O3 layer, the obtained CuO/Al/Al2O3 photocathode exhibits a high photocurrent density of (cid:2)0.95 mA cm(cid:2)2 at (cid:2)0.55 V vs. Ag/AgCl and photocorrosion stability of 89.5% after 1 h.
关键词： water splitting,localized surface plasmon resonance,CuO,Al2O3 passivation layer,photoelectrochemical,Al nanoparticles
更新于2025-09-12 10:27:22
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Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
摘要： In this work, the effects of atomic-layer-deposited (ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated. The results of electrical measurements and X-ray photoelectron sepectroscopy (XPS) showed that 1-nm-thick Al2O3 passivation layer is optimized to obtain excellent interfacial properties for HfYO/Si gate stack. Then, the metal-oxide-semiconductor capacitors with HfYO/1-nm Al2O3/Si/Al gate stack were fabricated and annealed at different temperatures in forming gas (95% N2+5% H2). Capacitance-voltage (C-V) and current density-voltage (J-V) characteristics showed that the 250oC-annealed HYO high-k gate dielectric thin film demonstrated the lowest border trapped oxide charge density (-3.3 × 1010 cm-2), smallest gate-leakage current (2.45 × 10-6 A/cm2 at 2 V) compared with other samples. Moreover, the annealing temperature dependent leakage current conduction mechanism for Al/HfYO/Al2O3/Si/Al MOS capacitor has been investigated systematically. Detailed electrical measurements reveal that Poole-Frenkle emission is the main dominant emission in the region of low and medium electric fields while direct tunneling is dominant conduction mechanism at high electric fields.
关键词： Al2O3 passivation layer,Electrical properties,Annealing,Co-sputtering HYO films,Conduction mechanism
更新于2025-09-10 09:29:36