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High-performance monolayer MoS2 photodetector enabled by oxide stress liner using scalable chemical vapor growth method
摘要： MoS2, as a typical representative of two-dimensional semiconductors, has been explored extensively in applications of optoelectronic devices because of its adjustable bandgap. However, to date, the performance of the fabricated photodetectors has been very sensitive to the surrounding environment owing to the large surface-to-volume ratio. In this work, we report on large-scale, high-performance monolayer MoS2 photodetectors covered with a 3-nm Al2O3 layer grown by atomic layer deposition. In comparison with the device without the Al2O3 stress liner, both the photocurrent and responsivity are improved by over 10 times under 460-nm light illumination, which is due to the tensile strain induced by the Al2O3 layer. Further characterization demonstrated state-of-the-art performance of the device with a responsivity of 16.103 A W?1, gain of 191.80, NEP of 7.96?×?10?15 W Hz?1/2, and detectivity of 2.73?×?1010 Jones. Meanwhile, the response rise time of the photodetector also reduced greatly because of the increased electron mobility and reduced surface defects due to the Al2O3 stress liner. Our results demonstrate the potential application of large-scale strained monolayer MoS2 photodetectors in next-generation imaging systems.
关键词： photodetector,Al2O3,stress liner,monolayer MoS2
更新于2025-09-23 15:19:57
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Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application
摘要： Layered tin disulfide (SnS2) nanosheets are gradually coming into people’s vision as an emerging two-dimensional material for the potential application majority in optoelectronic field. We investigate a sample of ultra-thin SnS2 nanosheets (~5 nm) on SiO2/Si substrates and the photodetectors performance based on it with and without high-k ALD-Al2O3 stress liner. By means of temperature-dependent Raman spectroscopy, both a red-shift of Raman frequency from 313.1 cm-1 to 311.2 cm-1 as well as a reduction of the first order temperature coefficient from -0.01232 cm-1/K to -0.00895 cm-1/K are measured. For device, compared to SnS2 photodetector, Al2O3/SnS2 photodetector shows enhancement with 7-times light current, 10-times responsivity, 25%-off rising time and 70%-off falling time under 365 nm illumination. The phenomena can be rationalized by factors that the SnS2 sample suffers a tensile strain and passivation effect exerted by capped Al2O3 layer. Meanwhile, the first principle calculations assist the study from an angle of verification. The analogue stress treatment operated in this work improves the properties of SnS2 and enhances the performances of SnS2-based photodetectors, aiming at expanding the thin-film materials applications in optoelectronic devices.
关键词： Al2O3 stress liner,Photodetector,SnS2,Raman spectroscopy
更新于2025-09-23 15:19:57