Counter-intuitive junction temperature behavior in AlGaN-based deep-ultraviolet light-emitting diodes

摘要： The junction temperature, one of the major parameters that strongly affect the performance of light-emitting diodes (LEDs), increases during operation because of the power dissipated as heat within an LED device. Therefore, LED devices with poor characteristics are expected to have higher junction temperatures for the same driving conditions. In this study, an observation contrary to this expectation is presented: a deep-ultraviolet LED device with superior electrical characteristics shows a higher junction temperature at the same input electrical power than a device with poor characteristics. A simple equivalent circuit comprising a diode, a series resistor, and shunt components is employed to elucidate this counter-intuitive observation by considering the possible heat sources inside the LED device. It is found that the junction temperature is mainly dominated by the power dissipated at the diode instead of the other possible heat sources including the Joule heating effect of the resistive components.