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Perovskite photocatalyst CsPbBr3-xIx with a bandgap funnel structure for H2 evolution under visible light
摘要： A simple and efficient light-assisted method is employed to prepare powder samples of all-inorganic mixed-perovskite CsPbBr3-xIx from CsPbBr3 by ion exchange in aqueous HBr/KI solution such that the concentration of I in a sample particle decreases on going from the surface to the interior. CsPbBr3-xIx/Pt, namely, CsPbBr3-xIx samples loaded with Pt nanoparticles, shows a high performance for the hydrogen evolution under visible-light irradiation in aqueous HBr solution saturated with CsPbBr3. The H2 evolution rate of the CsPbBr3-xIx/Pt powders (200 mg) is determined to be 224 μmol h-1, under 120 mW cm-2 visible-light (λ ≥ 420 nm) illumination. The CsPbBr3-xIx samples have a high stability, with no apparent decrease in the catalytic activity after 50 h of repeated H2 evolution experiments. The apparent quantum efficiency of CsPbBr3-xIx/Pt is determined to be 2.15% under the irradiation of 450 nm light.
关键词： photocatalysis,hydrogen evolution,bandgap funnel,all-inorganic perovskite,halide gradient
更新于2025-09-23 15:23:52
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Morphological regulation of all-inorganic perovskites for multilevel resistive switching
摘要： Enormous attention has been paid to all-inorganic cesium lead halide perovskites in various photoelectronic fields for their remarkable performances. However, comparing to their analogue organic-inorganic hybrid perovskites, the film morphology of such all-inorganic lead halide perovskites is difficult to control due to the low solubility of cesium salt. Here, we propose a new fabrication routine to control the film morphology of CsPbBr3. A series of CsPbBr3 thin films with big grains (≈800 nm) were successfully prepared. The memristors based on such CsPbBr3 thin films take on typical bipolar resistive switching behavior and remarkable characteristics such as high Ron/Roff ratio (≈105), very low working voltage (≈ ± 1 V), and long data retention (≥104 s). Furthermore, through modulating the film morphology, memristors with multilevel resistive switching behavior can be easily prepared. These advantages demonstrate that the all-inorganic cesium lead halide memristors possess great potential for future application.
关键词： Memristor,Morphological regulation,Multilevel resistive switching,All-inorganic perovskite
更新于2025-09-23 15:23:52
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All-inorganic 0D/3D Cs4Pb(IBr)6/CsPbI3-xBrx Mixed-dimensional Perovskite Solar Cells with Enhanced Efficiency and Stability
摘要： The inorganic halide perovskite CsPbI3 has shown great promise in efficient solar cells. However, the α-phase CsPbI3 is thermodynamically unstable at room temperature, limiting its applications. Herein, we have successfully fabricated highly stable all-inorganic 0D/3D Cs4Pb(IBr)6/CsPbI3-xBrx mixed-dimensional perovskite solar cells. The 0D Cs4Pb(IBr)6 phase spontaneously distributes in the 3D CsPbI3-xBrx perovskite phase and facilitates the (100) preferential crystal orientation of the CsPbI3-xBrx crystals. Due to the reasonable energy level alignment and lattice match between (040) in 0D Cs4Pb(IBr)6 and (002) in 3D CsPbI3-xBrx crystals, a 0D-3D heterojunction structure formed. The defect passivation and non-radiative recombination suppression within the films effectively promote smooth carrier transport in the perovskite solar cells, boosting the efficiency to 14.77%. The devices retained 93.9% of the initial efficiency after 60 days in a nitrogen atmosphere. Moreover, a high efficiency of 10.52% has also been achieved in the 1 cm2-large solar cells due to the high uniformity and repeatability of the 0D/3D films.
关键词： Cs4Pb(IBr)6,heterojunction,CsPbI3-xBrx,all-inorganic perovskite solar cells,stability
更新于2025-09-23 15:21:01
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2Da??3D Cs <sub/>2</sub> PbI <sub/>2</sub> Cl <sub/>2</sub> a??CsPbI <sub/>2.5</sub> Br <sub/>0.5</sub> Mixed-Dimensional Films for All-Inorganic Perovskite Solar Cells with Enhanced Efficiency and Stability
摘要： The phase instability of cesium lead halide perovskite is still a substantial challenge hindering its application. A 2D-3D all-inorganic Cs2PbI2Cl2-CsPbI2.5Br0.5 perovskite solar cell was successfully developed to address this issue. The 2D Cs2PbI2Cl2 phase distributed among the grain boundaries of the 3D CsPbI3-xBrx grains. The existence of Cs2PbI2Cl2 effectively facilitated the (100) preferential crystal orientation of the CsPbI2.5Br0.5 crystals, promoting the carrier transport. The smooth transition region between the (003)2D//(001)3D interface indicated the formation of a 2D-3D heterostructure. Due to the improved crystal quality, high uniformity and repeatability, the efficiency of the solar cells with areas of 0.09 cm2, 1 cm2 and 2 cm2 significantly improved to 15.09%, 12.74%, and 10.01%, respectively. The PCE retained 95.3% of the initial efficiency after 60 days in a nitrogen atmosphere at room temperature and 80% of the initial efficiency at humidity of 70±10% RH under continuous heating at 80°C for 12 h.
关键词： heterojunction,CsPbI3-xBrx,Cs2PbI2Cl2,all-inorganic perovskite solar cells,stability
更新于2025-09-23 15:21:01
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Efficient All-Inorganic CsPbBr <sub/>3</sub> Perovskite Solar Cells by Using CdS/CdSe/CdS Quantum Dots as Intermediate Layers
摘要： Highly e?cient all-inorganic perovskite solar cells require a fast charge transfer from CsPbBr3 to TiO2 to reduce the recombination from trap states. Herein, we insert a CdS/CdSe/CdS quantum dot (QD) layer between the TiO2 and CsPbBr3 layers to fabricate all-inorganic perovskite solar cells. By tuning the thicknesses of the CdSe layer of CdS/CdSe/CdS QDs, the conduction band (CB) levels can be adjusted to -3.72~-3.87 eV. After inserting the QD intermediate layer, the energy o?set between the CB of TiO2 and CsPbBr3 is reduced, thus leading to a charge transfer rate boost from 0:040 × 109 to 0:059 × 109 s?1. The power conversion e?ciency (PCE) of the solar cell with QD intermediate layer achieves 8.64%, which is 20% higher than its counterpart without QDs.
关键词： CdS/CdSe/CdS quantum dots,power conversion efficiency,charge transfer,all-inorganic perovskite solar cells
更新于2025-09-23 15:21:01
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Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33??V
摘要： A novel interface design is proposed for carbon-based, all-inorganic CsPbIBr2 perovskite solar cells (PSCs) by introducing interfacial voids between TiO2 electron transport layer and CsPbIBr2 absorber. Compared with the general interfacial engineering strategies, this design exempts any extra modification layer in final PSC. More importantly, the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial effects. First, they promote the light scattering in CsPbIBr2 film and thereby boost absorption ability of the resulting CsPbIBr2 PSCs. Second, they suppress recombination of charge carriers and thus reduce dark saturation current density (J0) of the PSCs. Third, interfacial voids enlarge built-in potential (Vbi) of the PSCs, awarding increased driving force for dissociating photo-generated charge carriers. Consequently, the PSC yields the optimized efficiency of 10.20% coupled with an open-circuit voltage (Voc) of 1.338 V. The Voc achieved herein represents the best value among CsPbIBr2 PSCs reported earlier. Meanwhile, the non-encapsulated PSCs exhibit an excellent stability against light, thermal, and humidity stresses, since it remains ~ 97% or ~ 94% of its initial efficiency after being heated at 85 °C for 12 h or stored in ambient atmosphere with relative humidity of 30–40% for 60 days, respectively.
关键词： Photovoltage,Stability,Interfacial engineering,CsPbIBr2,All-inorganic perovskite solar cells
更新于2025-09-23 15:21:01
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Aa??Site Rubidium Cationa??Incorporated CsPbI <sub/>2</sub> Br Alla??Inorganic Perovskite Solar Cells Exceeding 17% Efficiency
摘要： Due to its excellent thermal stability and high performance, the inorganic cesium lead mixed-halide (ABX3, where A=Cs, B=Pb and X= I/Br)all inorganic perovskite solar cells (IPVSCs) attracted much interest in the optoelectronic applications. However, the film quality, enough absorption by desired film thickness and nature of partial replacement of cations determine the stability of the CsPbI2Br perovskite films. Here, we employed a hot air method to control the thickness and morphology of the CsPbI2Br perovskite thin film and the A-site (herein, Cs+) cation is partially incorporated by rubidium (Rb+) cation for making stable black-phase in ambient condition. The Rb-cation incorporated Cs1-xRbxPbI2Br (x=0 to 0.03) perovskite thin films exhibited high crystallinity, uniform grains, extremely dense and pinhole free morphology. The fabricated device having Cs0.99Rb0.01PbI2Br perovskite composition with poly(3-hexylthiophene-2,5-diyl) (P3HT) as a hole transporting layer (HTL) exhibited 17.16 % power conversion efficiency (PCE), which is much higher than the CsPbI2Br based IPVSCs. The fabricated Cs0.99Rb0.01PbI2Br based IPVSC devices retain > 90 % of the initial efficiency over 120 hours at 65 °C thermal stress, which is much higher than CsPbI2Br sample.
关键词： all inorganic perovskite solar cells,hot air,A-site rubidium cation incorporation
更新于2025-09-23 15:19:57
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Simulated development and optimized performance of CsPbI3 based all-inorganic perovskite solar cells
摘要： Cesium lead iodide (CsPbI3), as one promising inorganic halide perovskite for higher stability, has received extensive attention in recent years. However, CsPbI3 based perovskite solar cells (PSCs) have yet to realize the high e?ciency achieved in organic-inorganic hybrid PSCs. In this work, we perform a device modeling by SCAPS-1D to investigate the limitation of CsPbI3 all-inorganic PSC (CsPbI3 i-PSCs) and improve its performance. For i-PSC, not only the absorber but all the layers should be composed of inorganic materials only. Therefore, several potential inorganic hole and electron transport layers (i-HTL and i-ETL) are compared ?rstly and the results reveal that Cu2O HTL and SnO2 ETL are the most suitable materials among them. Moreover, the device performance is further improved by optimizing the work function of back electrode, absorber thickness, doping density as well as defect density. Under optimized conditions, a conversion e?ciency of 21.31% is obtained for the FTO/SnO2/CsPbI3/Cu2O/Au i-PSC, indicating that there is much room for further performance enhancement.
关键词： CsPbI3,Device modeling,All-inorganic perovskite solar cell
更新于2025-09-23 15:19:57
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Tin-lead Alloying for Efficient and Stable All-inorganic Perovskite Solar Cells
摘要： Cesium containing all-inorganic perovskites have received considerable interest in photovoltaics research because of their potential for improved stability compared to their organic-inorganic hybrid counterparts. However, the inorganic perovskites studied thus far still suffer from lower power conversion efficiency and long-term instability, due to an unfavorable bandgap and either phase instability or air-sensitivity. Herein, A strategy to mitigate these concerns is investigated by alloying tin and lead on the B site to form tin-lead alloyed low-bandgap (~1.34 eV) inorganic CsSn0.3Pb0.7I3 perovskites. Solar cells made using this material in an inverted full-structured architecture with a PEDOT:PSS hole transport materials (HTM) attain power conversion efficiency (PCE) up to 9.41% (stabilized PCE 7.23%). Furthermore, a simple HTM-free device without PEDOT:PSS layer is demonstrated more stable than the full-structured device and exhibits a PCE of 7.60% (stabilized PCE 7.31%) – the highest efficiency to date for an inorganic perovskite with a bandgap below 1.40 eV. This simplified device structure shows good reproducibility and stability. This work provides a possible route for fabricating low-cost, high stability devices with competitive efficiencies.
关键词： tin-lead alloying,solar cells,all-inorganic perovskite,low-bandgap,stability
更新于2025-09-23 15:19:57
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Vacuum-Controlled Growth of CsPbI <sub/>2</sub> Br for Highly Efficient and Stable All-Inorganic Perovskite Solar Cells
摘要： A high temperature annealing process (> 250°C) is always needed to obtain high-quality CsPbI2Br perovskite films, which makes it a challenge in the manufacture and application of flexible photovoltaic devices. In this work, a vacuum-controlled growth (VCG) that can effectively control the crystallization of perovskite and obtain high-quality films with larger grain size and low defect density at lower temperature is demonstrated. Besides a facile introduction of polyethyleneimine (PEIE) interlayer improves the charge extraction and suppresses carrier recombination. Therefore, the power conversion efficiency (PCE) of all-inorganic CsPbI2Br perovskite solar cell (PSC) reaches 12.32%. The unencapsulated PSCs with VCG treatment and PEIE modification show outstanding stabilities with retaining over 95% of initial PCE after being stored in N2 glove-box for over 1000h. This low temperature crystallization method and cheap transport material introduction drive the development for future commercialization of all inorganic perovskite solar cells.
关键词： vacuum controlled growth,interface modification,All inorganic perovskite solar cells,crystallization control,low temperature,film fabrication
更新于2025-09-23 15:19:57