Relationship Between the Mobility and the Schottky Contact in Indium-Gallium-Zinc-Oxide Thin Film

摘要： This presents the contact mechanism to understand the relationship between the Schottky contact and tunneling phenomenon on in the IGZO (Indium Gallium Zinc Oxide) Thin Film. The tunneling transistors with bi-directional ambipolar transfer characteristics were made by high potential barriers at the Schottky contact related to the depletion layer. The IGZO thin film transistor was prepared on SiOC with various annealing temperatures of 100 °C～400 °C. The performance of TFT was improved at SiOC annealed at 300 °C with the Schottky contact. The IGS curves of TFT with SiOC annealed at 300 °C showed high Ion/Ioff ratio and without the threshold voltage shift, when applied at VDS = 0.0001 V, because of the tunneling phenomenon from the band to band of diffusion currents through deep potential barrier.