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Facile fabrication and photocatalytic properties of Cu O (x?=?1 and 2) nanoarrays on nanoporous copper
摘要： Micro-nano CuxO (x = 1 and 2) composite arrays were successfully synthesized on nanoporous copper (np-Cu) via one-step anodic oxidation method. With anodic time prolonging, the surface area and the length of pine-needle CuO clusters increased. The np-Cu/CuxO supported by amorphous layer composite as photocatalyst exhibited excellent photocatalytic activity and cycling stability for the degradation of Rhodamine B. Meanwhile, compared with the dif?culties of powders and nanoparticles in recycling, the ?exible and free-standing composite makes it easy for recovery of heterogeneous catalysts. The photocatalytic mechanism of np-Cu/CuxO was investigated.
关键词： Nanocomposites,Amorphous materials,Porous materials,Functional
更新于2025-09-23 15:23:52
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Combustion synthesis of nontoxic water-induced InYO thin film and application in thin film transistor
摘要： In the work, novel indium yttrium oxide (InYO) thin ?lms are prepared by an environmentally friendly aqueous solution process. Y element is added to suppress the generation of oxygen vacancies. The e?ect of Y doping on the performance and stability of nontoxic water-induced InYO thin ?lm transistors (TFTs) is ?rstly examined. With the increase of Y doping contents, o?-state current is decreased and mobility decreases from 15.8 to 11.7 cm2 V?1 s?1. Furthermore, the stability under positive bias stress is also obviously improved. The device with 2 mol% Y element shows an optimized electrical performance and good stability, including mobility of 12.8 cm2/V s, threshold voltage of 1.4 V, subthreshold swing of 0.33 V/decade and threshold voltage shift of 2.31 V under positive voltage stress of 5 V for 10,000 s. The performance improvement is attributed to the decrease of oxygen vacancies and the decline of interface trap density by Y addition.
关键词： Thin ?lms,Amorphous materials,Electrical properties,Sol-gel chemistry
更新于2025-09-23 15:23:52
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Transverse phonons and intermediate-range order in Sr-Mg fluorophosphate glasses
摘要： Vibrational and ultrasonic spectroscopies have been employed to study the composition and polarization dependence of the vibrational and elastic properties of the pseudo-binary mixed fluoride-phosphate glass-forming system xSr(PO3)2-(1-x)(0.62MgF2-0.38AlF3) with x: 0, 0.04, 0.06, 0.1, 0.15, 0.2, 0.3, 0.4, 0.8, 0.9 and 1. Composition-induced alterations in the short-range order have been quantitatively followed by means of Raman and IR spectroscopies. The analysis has shown that the incorporation of the phosphate groups in the fluoride network results in a less interconnected network with suppressed rigidity. The specific amorphous materials have been used as a model system in terms of wide glass-forming ability to elucidate the effect of variation in connectivity between the fluoride and phosphate sub-networks on the Boson peak nature. Emphasis has been given in the low-frequency Raman phenomenology, which in conjunction with the elastic properties allowed us to establish a possible link between the Boson peak and the transverse phonons in these glasses.
关键词： phonons,amorphous materials,oxide glasses,Boson peak,elastic properties,Raman spectroscopy,ATR spectroscopy
更新于2025-09-23 15:22:29
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Glass-forming derivatives of 2-cyano-2-(4H-pyran-4-ylidene) acetate for light-amplification systems
摘要： A series of 2-cyano-2-(4H-pyran-4-ylidene) acetate derivatives with triphenyl and 9H-carbazole moieties were synthesized and investigated, mostly for potential applications in organic solid state lasers. Synthesized compounds show remarkable amorphous film formation ability, tunable thermal properties (thermal stability varies from 190 °C to 387 °C and glass transition temperature from 94 °C up to 141 °C) with light absorption from 400 nm to 600 nm and photoluminescence from 600 nm up to 800 nm. Dyes with incorporated mono-styryl-electron donating fragment (KTB, KTBC and KTB3K) showed higher photoluminescence quantum yield (PLQY) (from 16% up to 23%), significantly lower amplified spontaneous emission (ASE) excitation threshold values (24–52 μJ/cm2) in pure thin films comparing to bis-styryl- electron donating fragment containing molecules (Bis-K4C, Bis-K5C and Bis-K4CK) with PLQY of 5–7% and ASE excitation threshold between 165 and 223 μJ/cm2. Some of the investigated KTB-type laser dyes could be perspective materials for organic lasers as well as for laser technology investigation and applications.
关键词： 4H-pyran-4-ylidene,Laser dyes,2-cyanoacetates,Amplified spontaneous emission,Amorphous materials
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Performance of silicon heterojunction solar cells using high resistivity substrates
摘要： We investigate the potential advantages of using very high resistivity n- and p-type, to manufacture high performance solar cells. Analytical modeling indicates that high resistivity substrates (10 Ωcm - >1k Ωcm) are required to have bulk Shockley-Read-Hall lifetimes in the millisecond range to outperform wafers with standard resistivities (< 10 Ωcm). Additionally, for resistivities over 10 Ω.cm, efficiencies show to be weakly dependent of the bulk resistivity. These results if experimental verified, can lead to more affordable manufacturing, by lessening the requirements of dopants homogeneity along the ingot. We successfully passivated both n- and p- type substrates using i-a-Si:H, obtaining surface saturation current densities below 10 fAcm-2 and effective minority-carrier lifetimes over 2 ms at maximum power over the entire range of bulk resistivities (3 Ωcm- >10k Ωcm).
关键词： photovoltaic cells,doping,charge carrier lifetime,silicon,amorphous materials
更新于2025-09-23 15:19:57
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Photo and thermal induced Bi2Se3 formation from Bi/GeSe2 hetero junction layer for topological insulator
摘要： In the present paper, we report the evolution of Bi2Se3 topological phase from the Bi diffusion into GeSe2 layer in the Bi/GeSe2 hetero junction film with light and thermal energy. The photo and thermal induced changes in the structural and optical properties of thermally evaporated Bi/GeSe2 bilayer film has been studied by various characterization techniques. The amorphous to crystalline phase transition and the formation of Bi2Se3 topological phase was confirmed from the X-ray diffraction analysis. The deposition as well as diffusion of Bi into GeSe2 layer changed the optical constants like transmitivity, absorption power, optical band gap, Urbach energy, Tauc parameter as studied from UV–Vis–NIR spectroscopy. The transmission power decreased after thermal annealing and laser irradiation where the reverse effect was found in case of absorption coefficient. The optical band gap decreased after diffusion which can be explained on the basis of density of defect states with an increase in disorder. Scanning electron microscopy investigations showed that the surface morphology was influenced by the diffusion phenomena. The Raman analysis also confirms the Bi2Se3 phase evolution with appropriate vibrational peaks. The modifications in optical parameters with thermal and light induced diffusion can be used in various optical applications using such metal/chalcogenides heterojunction layers.
关键词： Amorphous materials,Optical properties,Bi2Se3 phase,Chalcogenides,Thin films,Band gap
更新于2025-09-19 17:15:36
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Relating fracture toughness to micro-pillar compression response for a laser powder bed additive manufactured bulk metallic glass
摘要： A Zr-based bulk metallic glass produced using selective laser melting (SLM) was compared to the same alloy fabricated using traditional suction-casting. Analysis of the fracture toughness and mechanism through single edge notched beam bending experiments show a significantly reduced damage tolerance for the laser-processed material (KQ ~ 138.0 ± 13.1 → 28.7 ± 3.7 MPa √m), even though X-ray diffraction and microhardness responses were identical. Uncovered here using uniaxial quasistatic micro-pillar compression, as-cast samples more readily undergo shear transformations (evidenced through discrete load drops) below the nominal 0.2% yield stress, which can be connected to the higher macroscopic toughness. Differential scanning calorimetry demonstrated that the increased barrier to shear transformation for the SLM material could not be explained by the relative relaxation states. Rather, it is attributed to the greater dissolved oxygen concentration in the laser-processed material, which is postulated to decrease atomic mobility in the structure and thereby increase the activation energy required to initiate shear transformations.
关键词： fracture toughness,metallic glass,amorphous materials,additive manufacturing,selective laser melting,micromechanics
更新于2025-09-19 17:13:59
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Double line waveguide amplifiers written by femtosecond laser irradiation in rare-earth doped germanate glasses
摘要： We report the production of active double waveguides in Er/Yb doped GeO2-PbO glasses, by direct femtosecond laser writing. The glasses were produced using the melt-quenching technique and the active waveguides were written using 30 fs laser pulses, at 800 nm, with writing speed of 0.06 mm/sec and pulse energy of 32 μJ. The photo-induced negative refractive index change was of -7.4x10-3. The Er/Yb doped sample showed a relative gain (signal enhancement of 7.5 dB/cm, for 105 mW of 980 nm pump power. The relative gain compensates both, the propagation losses and the absorption losses, and a positive maximum internal gain of 4.6 dB/cm can be obtained at the signal wavelength of 1550 nm. The results obtained in present work demonstrate that Er/Yb glasses are promising materials for the fabrication of integrated amplifiers, lossless components and lasers based on germanate glasses.
关键词： Optical materials,Laser processing,Optical spectroscopy,Amorphous materials
更新于2025-09-12 10:27:22
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Amorphous InZnO:Li/ZnSnO:Li dual-active-layer thin film transistors
摘要： Amorphous Li-doped InZnO and ZnSnO (IZO:Li/ZTO:Li) dual-active-layer thin film transistors (TFTs) were fabricated by radio-frequency (RF) magnetron sputtering. The transmittance of the dual-stacked IZO:Li/ZTO:Li thin film was over 85% in the visible range. X-ray diffraction (XRD) result indicated that the thin film was amorphous. The influence of ZTO:Li layer thickness on the electrical characteristics and bias-stress stability of the dual-active-layer TFT was investigated. With the increasing thickness of ZTO:Li thin film, the saturation mobility (μSAT) increased firstly and then decreased, while the threshold voltage (VTH) shifted to the positive direction. The TFT with the optimized ZTO:Li thickness showed a superior performance with a μSAT of 33.2 cm2/V·s, a VTH of 3.2 V, a sub-threshold swing (SS) of 0.6 V/decade and a current on/off (ION/IOFF) up to 3.2 × 108.
关键词： B. Sputtering,A. Semiconductors,D. Electrical properties,A. Thin films,A. Amorphous materials
更新于2025-09-10 09:29:36
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Dependence of the saturation intensity with the dopant ion concentration: Application to the study of nonlinear optical properties in Nd-doped phosphate glass matrix
摘要： The effect of ion concentration on the saturation intensity, Is, was investigated and its effect on the evaluation of nonlinear optical properties was discussed. The suggested experimental approach points out a more accurate way to obtain Is. The value of Is in the limit of low concentration and low incident intensity was obtained as (266 ± 14) KW/cm2 at 514 nm. Through time resolved Z-scan the nonlinear refractive index, n2, of Nd-doped phosphate glass could be evaluated for different Nd concentrations. Finally, the n2 and Is values were used to determine the polarizability difference between ground and excited states as Δα = (2.6 ± 0.2) × 10?26 cm3, for Nd3+ ions in this glass matrix.
关键词： Nonlinear optics,Optical materials,Amorphous materials
更新于2025-09-09 09:28:46