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[IEEE 2018 IEEE International Semiconductor Laser Conference (ISLC) - Santa Fe, NM (2018.9.16-2018.9.19)] 2018 IEEE International Semiconductor Laser Conference (ISLC) - High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW
摘要： We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.
关键词： gallium nitride,amplified spontaneous emission (ASE),superluminescent diode (SLD),laser diode
更新于2025-11-28 14:23:57
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Ghost Spectroscopy with Classical Correlated Amplified Spontaneous Emission Photons Emitted by An Erbium-Doped Fiber Amplifier
摘要： We demonstrate wavelength-wavelength correlations of classical broad-band amplified spontaneous emission (ASE) photons emitted by an erbium-doped fiber amplifier (EDFA) in a wavelength regime around 1530 nm. We then apply these classical correlated photons in the framework of a real-world ghost spectroscopy experiment at a wavelength of 1533 nm to acetylene (C2H2) reproducing the characteristic absorption features of the C-H stretch and rotational bands. This proof-of-principle experiment confirms the generalization of an ASE source concept offering an attractive light source for classical ghost spectroscopy. It is expected that this will enable further disseminating ghost modality schemes by exploiting classical correlated photons towards applications in chemistry, physics and engineering.
关键词： spectral correlations,quantum optics,coherence,correlated photons,erbium-doped fiber amplifier,photon correlation modalities,ghost imaging,amplified spontaneous emission (ASE),spectroscopy,ghost spectroscopy,ghost modalities
更新于2025-09-19 17:15:36
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Ultrafast all-optical digital comparator using quantum-dot semiconductor optical amplifiers
摘要： In this investigation, three types of 160 Gb/s all-optical digital comparators using quantum-dot semiconductor optical amplifiers (QD-SOAs) are constructed. These configurations have different combination patterns of logic gates and QD-SOAs. Based on numerical simulations, we investigate and evaluate the performance of the devices in terms of the number of logic gates and QD-SOAs, and the value of the extinction ratio (ER). In addition, we demonstrate the effect of amplified spontaneous emission (ASE) noise on the ER and Q-factor. The results show that two of the three configurations are superior to the other configuration in terms of circuit complexity, value of ER, and sensitivity to injection current. Moreover, these two configurations achieve ER values over 10 dB and Q-factor over 9, even when intense ASE noise is considered. The proposed configurations have several advantages such as high quality, easy configuration, insensitivity to injection current, and strong noise robustness, which are favorable for practical applications. This investigation also facilitates the specification of the pros and cons of each configuration, and the determination of the appropriate comparator according to the desired requirements.
关键词： Logic gates,All-optical digital comparator,Amplified spontaneous emission (ASE),Quantum-dot semiconductor optical amplifier (SOA)
更新于2025-09-19 17:15:36
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Amplified spontaneous emission (ASE) and laser effects in ?2-LiYF4: Ce, Tb micro- and nanocrystals
摘要： β-NaYF4 crystals family are interesting materials and have potential for various applications. Here we present our research regarding amplified spontaneous emission (ASE) and laser effects of three materials: LiY0.7 F4: (Ce0.2 Tb0.1), NaY0.5 F4: (Ce0.4 Tb0.1) and LiLuY0.7 F4: (Ce0.2 Tb0.1), prepared by hydrothermal synthesis method. The luminescent active ion is Tb3+. β- LiY0.7 F4: (Ce0.2 Tb0.1) crystals with a hexagonal plate shape have ASE threshold at 400 mW/cm2, excitation with λex = 365 nm and a laser threshold at 490 J for a doped PMMA rod with a length of 25 mm. Laser line was observed at 542 nm.
关键词： β-LiYF4: Ce, Tb micro- and nanocrystals,Laser effect,Amplified spontaneous emission (ASE),Hydrothermal growth
更新于2025-09-19 17:13:59
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D‐A Type Pendant Conjugated Molecules based on Triazine Center with Depressed Intramolecular Charge Transfer Characteristics as Gain Media for Organic Semiconductor Lasers
摘要： A set of fluorene-capped pendant conjugated molecules (T-m and T-p), which consist of triazine center with three carbazole substituents as the donor-acceptor (D-A) type pendant structure, were designed, synthesized and investigated as gain media for organic semiconductor lasers (OSLs). Particularly, varying the capping positions of the fluorene units onto the pendant core structures results in obviously different intramolecular charge transfer (ICT) properties, whereas T-m manifested depressed ICT characteristic and high fluorescence quantum yield. The lowest ASE threshold in neat films was recorded of 1.9 μJ/cm2 for T-m and 83.8 μJ/cm2 for T-p, respectively, which indicated that depressed ICT characteristic in the case of T-m helps to enhance the ASE properties. Remarkably, the ASE threshold remained almost unchanged and the ASE spectra showed very small shifts (within 1 nm) for T-m with film samples annealed up to 180°C in open air. In contrast, its linear counterpart 2FEtCz-m showed obviously increased ASE threshold upon annealing above 100°C. The results suggest that the selective construction of conjugated pendant molecules with depressed ICT characteristics is beneficial for finely modulating the optical and electrical properties as well as improving the thermostability and photostability, which manifests the great potentials as robust gain media for OSLs.
关键词： Organic semiconductors,Amplified spontaneous emission (ASE),Organic semiconductor lasers,Pendant conjugated molecules,Intramolecular charge transfer (ICT)
更新于2025-09-12 10:27:22