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Electrosynthesis of Copper phosphide thin films for efficient water oxidation
摘要： A copper phosphide (Cu3P) thin film is synthesized on a Ni foam using a one-step electrodeposition method at room temperature and annealed at 300 °C in Ar atmosphere. The Cu3P film is amorphous and has a flat morphology with surface voids. It works as an electrocatalyst for water oxidation in an alkaline 1M KOH electrolyte. It exhibits excellent catalytic oxygen evolution reaction with an overpotential of 310 mV, Tafel slope of 88 mV/dec, and good stability over 20 h of operation at 10 mA/cm2. The excellent OER performance is due to its large electrochemically active surface area and low charge transfer resistance at the catalyst-electrolyte interface after the annealing.
关键词： annealing effect,Copper phosphide,oxygen evolution reaction,electrodeposition
更新于2025-09-19 17:15:36
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Effects of annealing on bandgap and surface plasmon resonance enhancement in Au/SnO2 quantum dots
摘要： Au/SnO2 quantum dots (AuSQDs) were synthesized, and the effects of annealing on their structural and optical properties were examined. Significant changes were observed in the bandgap and surface plasmon resonance (SPR) of the AuSQDs after thermal treatment at different temperatures (400, 500, and 600 °C). The properties of the as-prepared and annealed samples were characterized via X-ray diffraction analysis, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy, and diffuse reflectance spectroscopy. Annealing reduced the bandgap from 3.03 to 2.33 eV and increased the crystallinity while maintaining an average crystallite size below 10 nm. XPS valence band (VB) profiles provided information regarding the VB edge potentials, which helped to determine the conduction band edge potentials. An enhancement in the SPR of the Au nanoparticles was observed for AuSQD-500, which had the smallest bandgap among the samples investigated.
关键词： Annealing effect,Optical properties,Au/SnO2,Quantum dots
更新于2025-09-16 10:30:52
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Effect of Annealing Temperature on The physical Properties of Mn3O4 Thin Film Prepared by Chemical Bath Deposition
摘要： In this study, Mn3O4 thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 oC. The Mn3O4 film was annealed in an air atmosphere for an hour at temperatures 100 oC, 200 oC, 300 oC, 400 oC, 500 oC, respectively. The effect of annealing temperature on structural and optical properties such as optical constants of extinction coefficient (k), refractive index (n), the real (ε1) and imaginary (ε2) part of the dielectric constant and energy band gap of the film were determined. The experimental characterization techniques included X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement. XRD analysis showed that the film is grown in a polycrystalline structure in tetragonal phase. The conductivity of the film as a function of annealing temperature was measured as (1.32-6.65)x10-6 (Ωcm)-1.
关键词： Chemical bath deposition,Physical properties,Annealing effect,Mn3O4 film
更新于2025-09-04 15:30:14