Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer

摘要： In this paper, a tunable acid-resistant Zr-doped indium oxide (ZrInO) semiconductor material was developed. Detailed studies showed that the acid resistance of ZrInO thin films is tunable and increases with the increase in annealing temperature. Taking advantage of this special property, we successfully fabricated back-channel-etched (BCE) thin-film transistors (TFTs) based on the tunable acid-resistant ZrInO thin film. ZrInO-TFTs with BCE structure exhibited excellent electrical performance with a saturation mobility of 21.4 cm2V?1s?1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 1.0 × 107. These results envision that the developed ZrInO semiconductor with tunable acid resistance has a good prospect for the channel layer of BCE-TFTs.