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Enhancement for Potential-Induced Degradation Resistance of Crystalline Silicon Solar Cells via Anti-Reflection Coating by Industrial PECVD Methods
摘要： The issue of potential-induced degradation (PID) has gained more concerns due to causing the catastrophic failures in photovoltaic (PV) modules. One of the approaches to diminish PID is to modify the anti-re?ection coating (ARC) layer upon the front surface of crystalline silicon solar cells. Here, we focus on the modi?cation of ARC ?lms to realize PID-free step-by-step through three delicate experiments. Firstly, the ARC ?lms deposited by direct plasma enhanced chemical vapor deposition (PECVD) and by indirect PECVD were investigated. The results showed that the ef?ciency degradation of solar cells by indirect PECVD method is up to ?33.82%, which is out of the IEC 62804 standard and is signi?cantly more severe than by the direct PECVD method (?0.82%). Next, the performance of PID-resist for the solar cell via indirect PECVD was improved signi?cantly (PID reduced from ?31.82% to ?2.79%) by a pre-oxidation step, which not only meets the standard but also has higher throughput than direct PECVD. Lastly, we applied a novel PECVD technology, called the pulsed-plasma (PP) PECVD method, to deal with the PID issue. The results of the HF-etching rate test and FTIR measurement indicated the ?lms deposited by PP PECVD have higher potential against PID in consideration of less oxygen content in this ?lm. That demonstrated the ?lm properties were changed by applied a new control of freedom, i.e., PP method. In addition, the 96 h PID result of the integrated PP method was only ?2.07%, which was comparable to that of the integrated traditional CP method. In summary, we proposed three effective or potential approaches to eliminate the PID issue, and all approaches satis?ed the IEC 62804 standard of less than 5% power loss in PV modules.
关键词： solar cell,potential-induced degradation,anti-re?ection coating,plasma enhanced chemical vapor deposition
更新于2025-09-23 15:21:01
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Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties
摘要： Over the past couple of decades, extensive research has been conducted on silicon (Si) based solar cells, whose power conversion e?ciency (PCE) still has limitations because of a mismatched solar spectrum. Recently, a down-shifting e?ect has provided a new way to improve cell performances by converting ultraviolet (UV) photons to visible light. In this work, caesium lead bromide perovskite quantum dots (CsPbBr3 QDs) are synthesized with a uniform size of 10 nm. Exhibiting strong absorption of near UV light and intense photoluminescence (PL) peak at 515 nm, CsPbBr3 QDs show a potential application of the down-shifting e?ect. CsPbBr3 QDs/multicrystalline silicon (mc-Si) hybrid structured solar cells are fabricated and systematically studied. Compared with mc-Si solar cells, CsPbBr3 QDs/mc-Si solar cells have obvious improvement in external quantum e?ciency (EQE) within the wavelength ranges of both 300 to 500 nm and 700 to 1100 nm, which can be attributed to the down-shifting e?ect and the anti-re?ection property of CsPbBr3 QDs through the formation of CsPbBr3 QDs/mc-Si structures. Furthermore, a detailed discussion of contact resistance and interface defects is provided. As a result, the coated CsPbBr3 QDs are optimized to be two layers and the solar cell exhibits a highest PCE of 14.52%.
关键词： down-shifting e?ect,solar cell,anti-re?ection property,caesium lead bromide perovskite quantum dots (CsPbBr3 QDs),multicrystalline Si (mc-Si)
更新于2025-09-23 15:19:57
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Antireflection Coatings with Graded Refractive Index of Indium Tin Oxide for Si-based Solar Cells
摘要： The glancing angle deposition (GLAD) technique for fabricating an antire?ection (AR) structure with graded refractive index was applied to silicon substrate by using indium tin oxide (ITO) combining the sputtering method with the evaporation method. In spite of the very limited refractive index pro?le of ITO compared to that of the silicon substrate, the designed AR coatings at wavelengths from near infrared to near ultraviolet showed a re?ectance of only 5.31% at an incident angle of 30? while the transmittance of the ITO AR layer showed a sharp decrease near a wavelength of 400 nm. From these analyses, ITO multilayered AR coatings fabricated by using the GLAD method should improve the performance of an optical device after post-annealing at a low temperature of 160 ?C. When the ITO AR coatings were applied to actual silicon solar cells, it appears that a non-grid electrode cell with ITO AR coatings is possible compared with insulator AR coatings with metal grid electrodes
关键词： Anti-re?ection coating,Solar cells,Glancing angle deposition,Indium tin oxide
更新于2025-09-19 17:15:36
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Low-Cost and Flexible Anti-Reflection Films Constructed From Nano Multi-Layers of TiO <sub/>2</sub> and SiO <sub/>2</sub> for Perovskite Solar Cells
摘要： We theoretically investigate the anti-re?ection (AR) ?lms based on nano multi-layers (NML) of TiO2 and SiO2. This kind of NML dielectric structures have the advantages of low-cost and ?exible. Six kinds of transparent conductive substrate (TCS) have been studied here, which are ITO (indium tin oxide) glass, FTO (?uorine-doped tin oxide) glass, ITO PEN (polyethylene naphthalate), FTO PEN, ITO PET (polyethylene terephthalate), and FTO PET, respectively. The AR effect is about 2.3825% for FTO glass substrate, about 3.4232% for ITO glass substrate, about 5.2703% for FTO PEN substrate, about 5.0914% for ITO PEN, about 3.8584% for FTO PET, and about 4.2371% for ITO PET. In practice, this kind of AR ?lms can be widely applicable to enhance the external quantum ef?ciency (EQE) of the solar cells, and then improve the power conversion ef?ciency (PCE). Finally, the improved PCE of perovskite solar cells based on our NML AR ?lms is theoretically obtained.
关键词： perovskite solar cells,Anti-re?ection,nano multi-layers
更新于2025-09-12 10:27:22
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Characteristics of Diamond-Like Carbon Films Fabricated by Using a Filtered Vacuum Arc System for Dye-Sensitized Solar Cells
摘要： Dye-sensitized solar cells (DSSC) based on diamond-like carbon (DLC) anti-re?ection coating (ARC) thin ?lms are investigated. The DLC ?lm was proposed to improve the cell performance of DSSC devices. In this work, the DLC ?lms were fabricated by using the FVA (?ltered vacuum arc) method, the structural, optical, and physical properties of the fabricated DLC ?lms with various ?lm thicknesses were experimentally investigated. All DLC ?lms showed smoother and more uniform surfaces with increasing ?lm thickness. Furthermore, the values of rms surface roughness, friction coe?cient, the refractive index, and the absorption coe?cient increased with increasing ?lm thickness, the hardness and the elastic modulus of the DLC ?lms were improved. These results are associated with the increased sp3 contents in the amorphous carbon ?lm due to the e?ects of the energetic ion bombardment during ?lm deposition.
关键词： DLC,Filtered vacuum arc (FVA),Hardness,Anti-re?ection,Friction coe?cient,Power conversion e?ciency
更新于2025-09-11 14:15:04