- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Chemical imaging of buried interfaces in organic-inorganic devices using FIB-ToF-SIMS
摘要： Organic-inorganic hybrid materials enable the design and fabrication of new materials with enhanced properties. The interface between the organic and inorganic materials is often critical to the device’s performance and therefore chemical characterization is of significant interest. Since the interfaces are often buried, milling by focused ion beams (FIB) to expose the interface is becoming increasingly popular. Chemical imaging can subsequently be obtained using secondary ion mass spectrometry. However, the FIB milling process damages the organic material. In this study, we make an organic-inorganic test structure to develop a detailed understanding of the processes involved in FIB milling and SIMS imaging. We provide an analysis methodology that involves a “clean-up” process using sputtering with an argon gas cluster ion source to remove the FIB induced damage. The methodology is evaluated for two additive manufactured devices, an encapsulated strain sensor containing silver tracks embedded in a polymeric material and a copper track on a flexible polymeric substrate created using a novel nanoparticle sintering technique.
关键词： FIB,additive manufacturing,hybrid interfaces,ToF-SIMS,polymer,Argon cluster,milling
更新于2025-09-23 15:22:29
-
Precise sputtering of silicon dioxide by argon cluster ion beams
摘要： In this work, the sputtering yields of SiO2 by the argon cluster ion beam with incident angles 0° and 45° have been studied experimentally. The kinetic energy of the primary cluster ions was in the range of E = 5–23.5?keV, and the mean cluster size was Nmean = 100–1000 atom/cluster. It is found that, when the energy per cluster atom quantity E/N is comparable to the binding energy of the solid (of the order of several eV), the yields of atoms sputtered per primary atom Y/N, at the incident angle 45°, is 4 times greater than at normal incidence. Conversely, when energy E/N is significantly above the binding energy of the solid (~ 100?eV), the sputtering yields for the incident angles 0° and 45° have the same values.
关键词： kinetic energy,incident angles,argon cluster ion beam,sputtering yields,cluster size,silicon dioxide
更新于2025-09-10 09:29:36
-
Internal Energy Distribution of Secondary Ions Under Argon and Bismuth Cluster Bombardments: “Soft” Versus “Hard” Desorption–Ionization Process
摘要： The emission/ionization process under massive argon cluster bombardment was investigated by measuring the internal energy distributions of a series of benzylpyridinium ions. Argon clusters with kinetic energies between 10 and 20 keV and cluster sizes ranging from 500 to 10,000 were used to establish the influence of their size, energy, and velocity on the internal energy distribution of the secondary ions. It is shown that the internal energy distribution of secondary ions principally depends on the energy per atom or the velocity of the cluster ion beam (E/n ∝ v2). Under low energy per atom (E/n ? 10 eV), the mean internal energy and fragmentation yield increase rapidly with the incident energy of individual constituents. Beyond 10 eV/atom impact (up to 40 eV/atom), the internal energy reaches a plateau and remains constant. Results were compared with those generated from bismuth cluster impacts for which the mean internal energies correspond well to the plateau values for argon clusters. However, a significant difference was found between argon and bismuth clusters concerning the damage or disappearance + impact cross section. A 20 times smaller disappearance cross section was measured under 20 keV Ar2000 + bombardment, thus quantitatively showing the low damage effect of large argon clusters compared to 25 keV Bi5 for almost the same molecular ion yield.
关键词： Bismuth cluster,Argon cluster,Internal energy,TOF-SIMS,Benzylpyridinium ion
更新于2025-09-04 15:30:14