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Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
摘要： We fabricated high-electron-mobility transistor structures with InAlN as a barrier layer on 8- or 6-inch Si substrates by using a recently developed high-speed-wafer-rotation single-wafer MOCVD tool. It has been reported that Ga inclusion in the InAlN layer causes serious problems in the control of group III metal composition in some cases, but the samples grown using the tool exhibited an InAlN layer with an abrupt interface and almost no Ga inclusion. Excellent in-wafer uniformity, repeatability, and wafer-to-wafer uniformity of device structure are also reported. The results shown in this paper indicate high performance of the tool in the real production of devices.
关键词： A3. Metalorganic vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III-V materials,B3. High electron mobility transistors
更新于2025-09-23 15:23:52
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Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene
摘要： A thermal analysis of AlGaN/GaN high electron mobility transistors (HEMTs) with Graphene is investigated using Silvaco and Finite Element Method. Two thermal management solutions are adopted; first of all, graphene is used as dissipation material between SiC substrate and GaN buffer layer to reduce thermal boundary resistance of the device. At the same time, graphene is also used as a thermal spread material on the top of the source contacts to reduce thermal resistance of the device. The thermal analysis results show that the temperature rise of device adopting graphene decreases by 46.5% in transistors operating at 13.86 W/mm. Meanwhile, the thermal resistance of GaN HEMTs with graphene is 6.8 K/W, which is much lower than the device without graphene, which is 18.5 K/W. The thermal management solutions are useful for integration of large-scale graphene into practical devices for effective heat spreading in AlGaN/GaN HEMT.
关键词： AlGaN/GaN,Thermal Management,High-Electron-Mobility Transistors (HEMTs),Graphene
更新于2025-09-23 15:23:52
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
摘要： We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.
关键词： B3 High electron mobility transistors,B3 Field effect transistors,A3 Organometallic vapor phase epitaxy,A1 Etching,B2 Semiconducting III-V materials
更新于2025-09-23 15:22:29
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Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge
摘要： In this paper, the influence of a regrown interface on the electrical properties of AlGaN/GaN heterostructure was investigated for recessed-gate MOSFETs fabricated by selective area regrowth. The electron mobility of the two-dimensional electron gas (2DEG) on regrown AlGaN/GaN structures was degraded when the 2DEG was near the regrown interface. The regrown interface had high carrier concentrations and Si impurities that caused degradation of the electron mobility of the 2DEG. Unintentional carrier generation at the regrown interface was eliminated by ultraviolet (UV) treatment before regrowth. A regrown AlGaN/GaN MOSFET device was then fabricated using the UV treatment. The device exhibited good performance such as normally-off operation without hysteresis or leaks. Improvement of the electrical characteristics of AlGaN/GaN MOSFETs was thus achieved by suppression of regrown interface charge.
关键词： B2. Semiconducting gallium compounds,B3 High electron mobility transistors,A1. Interfaces,A3. Metalorganic vapor phase epitaxy,B1. Nitride
更新于2025-09-23 15:22:29
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Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs
摘要： It is shown that an EC–0.90 eV trap in commercial AlGaN/GaN MISHEMTs grown on a Si (111) substrate is responsible for a ?1.8-V threshold voltage (VT) instability using a combination of defect spectroscopy and double-pulsed current–voltage measurements. The EC ? 0.90 eV trap is located in the GaN buffer and is emptied by high drain biases in pinch-off, which raises the trap above the Fermi level in the GaN buffer. This trap also exhibits both fast and slow recovery processes that are explained by the availability of free electrons throughout the depth of the GaN buffer and the trapping process that depletes the free electron concentration. TCAD modeling is used to demonstrate this process and also to show why there is not a significant increase in buffer leakage current after the large negative VT shift due to this trap. This demonstrates that optimizing buffer designs are critical for ideal device performance.
关键词： deep-level transient spectroscopy (DLTS),isothermal,GaN-on-Si,threshold voltage instability,metal-insulator-semiconductor high electron mobility transistors (MISHEMTs),Capture process,trap
更新于2025-09-23 15:22:29
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A voltage-transient method for characterizing traps in GaN HEMTs
摘要： Trapping e?ects in GaN HEMTs still limit their performance. The current-transient methodology has shown advantages in characterizing traps in the device. However, the voltage drift may cause errors in measurements with high accuracy requirements. In this paper, we present a methodology to characterize traps in GaN HEMTs using the voltage-transient measurements. We demonstrate the advantages of this method in terms of simplicity and e?ectiveness. In particular, it avoids the said problem due to the optimized measuring circuit. With this method, we have identi?ed the time constants and energy levels of traps in the AlGaN barrier layer and the GaN bu?er layer, respectively, in the devices. Their trapping and de-trapping mechanisms were also demonstrated at various temperature measurements. A classic exponential dependence of the degradation rate on the channel current was identi?ed.
关键词： Trapping e?ect,GaN,Voltage transient,High electron mobility transistors (HEMTs)
更新于2025-09-23 15:22:29
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Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices
摘要： A simple electrical method to extract device channel thermal resistance in transistors is presented here. The method compares the dc to discrete-pulsed characteristics and estimates the effective increase in channel temperature under dc biasing conditions. Using the discrete-pulsed I versus t method, the self-heating of the device is effectively eliminated, which helps avoiding the underestimation of the device channel thermal resistance, therefore, making it possible to perform thermal measurements at the high power operation. This technique was applied to lateral GaN HEMTs with three different substrates as well as vertical GaN current aperture vertical electron transistor (CAVET) on sapphire, which proved its sensitivity and validity for different device structures and geometries.
关键词： high-electron mobility transistors (HEMTs),self-heating,current aperture vertical electron transistor (CAVET),Channel thermal resistance
更新于2025-09-23 15:21:01
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Terahertz Emission from an Asymmetric Dual-Grating-Gate InGaAs High-Electron-Mobility Transistor Stimulated by Plasmonic Boom Instability
摘要： Asymmetric dual-grating-gate InGaAs high-electron-mobility transistors (ADGG-HEMTs) are studied as plasmonic terahertz (THz) emitters. We experimentally observed THz emission from a fabricated device at 110K. The spectra showed a broadband resonant emission under low d.c. channel currents reflecting radiation decay of thermally excited plasmons. With increasing the current and longitudinal electric field the emission was enhanced in a narrower spectral range suggesting promotion of plasmonic instability. Its threshold behavior suggests the occurrence of plasmonic-boom-type instability.
关键词： terahertz emission,plasmonic instability,asymmetric dual-grating-gate,high-electron-mobility transistors,InGaAs
更新于2025-09-16 10:30:52
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Two-terminal terahertz detectors based on AlGaN/GaN high-electron-mobility transistors
摘要： We report an approach to make two-terminal antenna-coupled AlGaN/GaN high-electron-mobility-transistor self-mixing terahertz detectors. Fluorine ion implantation is used to increase the threshold voltage of the AlGaN/GaN two-dimensional electron gas. An optimal implantation dose can be reached so that the detector responsivity is maximized at zero gate voltage or with the gate ?oating. The relationship between the ion dosage and the threshold voltage, electron mobility, electron density, responsivity, and noise-equivalent power (NEP) is obtained. A minimum optical NEP of 47 W= ??????Hz is achieved from a two-terminal detector at 0.65 THz. The capability of two-terminal operation allows for the design of a large array of antenna-coupled high-electron-mobility transistor detectors without the demanding needs of routing negative gate voltage lines around the antenna array and minimizing the gate leakage current.
关键词： two-terminal operation,terahertz detectors,AlGaN/GaN,fluorine ion implantation,high-electron-mobility transistors
更新于2025-09-11 14:15:04
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High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
摘要： In this paper, high performance InGaN double channel (DC) high electron mobility transistors (HEMTs) are proposed and systematically investigated. Due to the coordination of double InGaN channels, a large maximum drain current density and a distinct double-hump feature of the transconductance and frequency performance are achieved. More importantly, it is revealed that the coupling effect between the two InGaN channels is much stronger than that of the conventional GaN DC HEMTs. This characteristic leads to a remarkable enhancement in the gate voltage swing, indicating the excellent linearity of the InGaN DC HEMTs at both dc and rf conditions. Benefiting from the enhanced electron confinement in InGaN channels, the fabricated HEMTs show a low off state drain leakage current of 0.26 μA/mm and a high on/off current ratio (Ion/Ioff) of 5.1 × 106. In addition, the desirable current collapse and breakdown characteristics are also obtained. This work convincingly demonstrates the great potential and practicality of the InGaN DC HEMTs for high power and high bandwidth applications.
关键词： high power,InGaN,double channel,high electron mobility transistors,high bandwidth,coupling effect,linearity
更新于2025-09-09 09:28:46