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Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs
摘要： In this paper, analytical gate capacitance models for a large-signal compact model of AlGaN/GaN high-electron mobility transistors are proposed. Different from the MOSFET devices, different depletion regions on either side of the gate are fully considered for high-voltage GaN devices. The depletion regions are bias-dependent to implement the capacitance models into the large-signal compact model. A transfer function is proposed to characterize the switching behavior of the capacitances between on- and off-states, which is essential to describe all the states of a device, for example, operating at Class-B. Different from previous works, the current saturation phenomenon is taken into account in determining the intrinsic capacitances which are induced by nonstatic channel charge. The capacitance models can be easily implemented into the virtual-source-based model to accurately predict the S-parameters and large-signal output characteristics.
关键词： intrinsic capacitances,2-D electron gas (2DEG)-electrode fringing capacitances,AlGaN/GaN high-electron mobility transistors (HEMTs),large-signal compact model
更新于2025-09-09 09:28:46
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Creation of Two-Dimensional Electron Gas and Role of Surface Donors in III-N Metal-Oxide-Semiconductor High-Electron Mobility Transistors
摘要： The role of surface donors at the oxide/semiconductor interface of III-N metal-oxide-semiconductor (MOS) high-electron mobility transistors (HEMTs), by creating a two-dimensional electron gas (2DEG) and the device performance, are investigated. Al2O3/GaN/AlGaN/GaN MOS HEMTs show the surface donor density (Nd,surf ) of 2.2 (cid:1) 1013 cm(cid:3)2 which is increased up to 3.4 (cid:1) 1013 cm(cid:3)2 after post-deposition annealing. In the latter, surface donors fully compensate the surface polarization charge and the HEMT threshold voltage decreases substantially with the oxide thickness. On the other hand, an open-channel drain current is found to be independent of Nd,surf, while marginal trapping is completely removed when Nd,surf increases with annealing. Consequently, ionized surface donors behave like a fixed charge and are clearly distinguishable from trapping states. Open-channel 2DEG densities of (cid:4)1.1 (cid:1) 1013 cm(cid:3)2 are extracted from capacitance–voltage measurements. Similarly, recent data on enhancement-mode HfO2/InAlN/AlN/GaN MOS HEMTs are analyzed where Nd,surf is reduced down to (cid:3)2 while 2DEG densities reach (cid:4)2.7 (cid:1) 1013 cm(cid:3)2. It is suggested that under the open-channel condition, 2DEG is supplied also by an injecting source contact if Nd,surf is lower than the QW polarization charge. Our charge quantifications are supported by calculating energy-band diagrams.
关键词： oxide-semiconductor interfaces,AlGaN/GaN high-electron mobility transistors (HEMTs),polarization
更新于2025-09-09 09:28:46
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Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
摘要： Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of Vth stability. The Vth analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on Vth stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the Vth stability of power devices in practical, high-temperature applications.
关键词： high-temperature operation,gallium nitride (GaN),analytical model,high electron mobility transistors (HEMTs),threshold voltage (Vth) stability
更新于2025-09-04 15:30:14