- 标题
- 摘要
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- 实验方案
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Optical coherence tomography guidance during bioresorbable vascular scaffold implantation
摘要： Bioresorbable vascular scaffold (BRS) represent a revolutionary concept in interventional cardiology. After initial enthusiasm, recent real world registries, including patients with increasing lesion complexity, reported not trivial rates of scaffold thrombosis (ScT). The importance of correct patients selection as well as technical aspects during BRS implantation procedures has been highlighted in several studies suggesting that the high rate of ScT might be related to uncorrected patients/lesions selection together with underutilization of intracoronary imaging guidance leading to suboptimal BRS implantation. The high-resolution power together with the lack of shadowing observed beyond polymer struts makes optical coherence tomography (OCT) the optimal imaging technique to guide BRS implantation and identifies eventually scaffolds failures.
关键词： bioresorbable vascular scaffold (BRS),Optical coherence tomography (OCT)
更新于2025-09-19 17:15:36
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Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices
摘要： In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching (CRS) by varying SET process current compliance. The conductive filament conduction mechanism of BRS could be verified by electrical characteristics and reliable data fitting. Through increasing current compliance of the SET process, CRS could be achieved due to higher activity of oxygen vacancies originated from the intensified thermal effect. This paper was beneficial to understand the switching mechanisms of BRS and CRS and provide a method to realize interconversion. Moreover, it was also a potential and promising device to be applied in the neurosynaptic biomimetic field.
关键词： interconversion,complementary resistive switching (CRS),conductive filament,GeTeOx,Bipolar resistive switching (BRS)
更新于2025-09-09 09:28:46
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Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO <sub/><i>x</i> </sub> Thin Film
摘要： In this study, we implemented a resistance change memory (ReRAM) device using a SiC layer with excellent physical properties. We fabricated devices composed of Ti/SiC/Pt and Ti/HfOx/SiC/Pt structures and investigated their memory characteristics. The Ti/SiC/Pt ReRAM devices exhibited stable bipolar resistive switching characteristics but had a relatively small memory window, whereas the Ti/HfOx/SiC/Pt ReRAM devices had a large memory window and low operating voltage. In addition, the Ti/HfOx/SiC/Pt ReRAM devices exhibited stable endurance characteristics over 500 cycles and excellent retention characteristics at room temperature and high temperatures for 1 × 104 s. Further, the Ti/HfOx/SiC/Pt ReRAM devices exhibited multi-level conduction states by modulating the reset stop voltage, and each resistance level had excellent endurance characteristics. The average transmittance of the HfOx/SiC bilayer in visible light was 87%. Such a high value indicates that the HfOx/SiC bilayer fabricated by the stacking method is expected to be a suitable material for highly reliable nonvolatile memory and transparent electronic devices, even in harsh environments.
关键词： Bilayer,ReRAM,BRS,Silicon Carbide,Multi-Level Cell (MLC)
更新于2025-09-04 15:30:14