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Study of BiFeO3 thin film obtained by a simple chemical method for the heterojunction-type solar cell design
摘要： Polycrystalline BiFeO3 (BFO) films of different thickness were synthesized by a 2-methoxyethanol (acid)-free simple chemical method. A rhombohedral-type pure phase with a crystallite size less than 18.8 nm was obtained. SEM micrographs showed that BFO has a flat and homogeneous morphology when it was deposited on different semiconductor substrates (ZnO, Ni doped ZnO, and CdS). The highest roughness value (8.6 nm) was observed when BFO was deposited on CdS. The optical response showed that the optical band gap slightly changes as thickness increases. The photovoltaic response of the BFO film was assessed employing different solar cell architectures (p-BFO-n and BFO-n). The results showed that the solar cell based on the Ag/PbS/BFO/CdS/FTO/glass structure presented a short-circuit current density of JSC ? 239:6 mA=cm2 and a power conversion efficiency of h ? 7:65 (cid:2) 10(cid:3)3 %. Photoelectrochemical and ferroelectric measurements were employed to explain the photovoltaic response.
关键词： Mott-Schottky,XPS,PFM,BiFeO3 thin films
更新于2025-09-23 15:21:01
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Strain induced enhancement of erasable domain wall current in epitaxial BiFeO <sub/>3</sub> thin films
摘要： The characteristic of electronic transport at the ferroelectric domain boundary is intensively studied for the potential application in random access memory due to its unique resistance switching mechanism along with polarization reversal. Such high conductivity in artificially created domain walls is not only affected by the material defect chemistry, such as oxygen vacancies, but also pertinent to the multiple polarization states of the sample. Here, we show the enhanced domain wall current in BiFeO3 thin films that could be obtained by the optimization of epitaxial strains from substrates. The leakage current analysis reveals the electronic transport of domain wall current in line with the space-charge-limited conduction mechanism. It is believed that the uncompensated polarization charge arouses the band bending at the domain boundary, which profoundly affects the wall current. Free carriers are easily concentrated in the domain boundary region for the compensation of the enhanced polarization by the strain, resulting in an abrupt increase of the conductivity.
关键词： ferroelectric domain boundary,BiFeO3 thin films,space-charge-limited conduction,epitaxial strains,electronic transport
更新于2025-09-09 09:28:46