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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Progress on a New Measurement of von Klitzing Constant at NIM
摘要： This paper describes the progress on a new measurement of von Klitzing constant (Rk) through an experiment linking the new calculable capacitor and the quantized Hall resistance by means of a quadrature transfer at NIM. The recent improvements of the new calculable capacitor, the optical interferometry, the impedance measurement chain are presented.
关键词： von Klitzing constant,optical interferometry,bridge circuits,Calculable capacitor,impedance measurement,measurement standards
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Four Terminal Pair Digital Sampling Impedance Bridge up to 1 MHz
摘要： This paper describes a new four terminal pair digital sampling impedance bridge for frequency range up to 1 MHz. The bridge was primarily designed for a calibration of a phase angle of the current shunts. However, the bridge is capable of comparing any impedance standards up to approximately 100 kW in a full complex plane. The experimental measurements of the known standards showed the bridge deviations is below 50 μW/W and below 500 μrad at 1 MHz.
关键词： Bridge circuits,sampling methods,impedance measurement,shunts (electrical),phase comparators
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
摘要： The stability of GaN-on-Si HEMTs with substrate-to-source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under certain conditions. Stability analysis reveals that parasitic inductance in the substrate-loop alone is sufficient for instabilities, even with zero parasitic inductance in the gate- and power-loops. A systematic analytical stability analysis is carried out based on a small-signal equivalent circuit. The theory is verified by measurements using a PCB-embedded 600 V GaN HEMT with integrated gate driver. Adequate damping of the substrate loop resonance enables stable operation of the half-bridge module.
关键词： Semiconductor Device Packaging,Gallium Nitride,Switching Circuits,Circuit Stability,Substrate Potential,Bridge Circuits
更新于2025-09-04 15:30:14