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过滤筛选
- 2018
- contrast stretch
- CMOS image sensor
- point-of-care (POC) diagnosis
- bio-microfluidic imaging
- Optoelectronic Information Science and Engineering
- Xi’an University of Technology
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A 60-m Range 6.16-mW Laser-Power Linear-Mode LiDAR System With Multiplex ADC/TDC in 65-nm CMOS
摘要： This paper presents a linear-mode light detection and ranging (LiDAR) analog front-end architecture with multiplex analog-to-digital converter/time-to-digital converter (ADC/TDC). An added voltage-to-time converter (VTC) and a reused TDC are simultaneously used to implement the ADC and TDC function, thus replacing discrete ADC and TDC, saving hardware cost and reducing power consumption. A three-stage inverter-based transimpedance amplifier (TIA) with ultra-low-power, low-noise and high/low gain mode (long/short range mode) is proposed to reduce its influence to optical signal-to-noise ratios (OSNR). The prototype TIA and ADC/TDC is fabricated in the 65-nm CMOS technology and integrated into the single-line APD-based LiDAR system. The receiver front-end of TIA and ADC/TDC only consumes 12.44-mW. The minimum detection current of the receiver front-end is less than 238 nA with bandwidth of 150MHz for long-range and weak-light detection. LiDAR achieves a measurement range of 60 m with a 70-klx direct sunlight and only 6.16 mW average laser power. Experimental results show that this architecture is suitable for low-cost multi-line integrated LiDAR applications compared to conventional architecture using ADC, TDC, ADC+TDC architecture.
关键词： VTC,measurement range,ADC/TDC,TIA,optical signal-to-noise ratios,APD,analog front-end,CMOS,LiDAR,power consumption
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Reliability of CMOS-Compatible Ti / n-InP and Ti / p-InGaAs Ohmic Contacts for Hybrid III-V / Si Lasers
摘要： Electrical properties of CMOS-compatible titanium contacts on n-InP and p-In0.53Ga0.47As using 300 mm tools, in the scope of integrating them on III-V / Si hybrid lasers, are presented. Electrical behaviors after i) processing, ii) integration and back-end sequences, and iii) several simulated laser uses were investigated.
关键词： III-V / Si hybrid lasers,n-InP,reliability,CMOS-compatible,titanium contacts,p-InGaAs
更新于2025-09-16 10:30:52
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Continuous Live-Cell Culture Monitoring by Compact Lensless LED Microscopes
摘要： A compact lensless microscope comprising a custom-made LED engine and a CMOS imaging sensor has been developed for live-cell culture imaging inside a cell incubator environment. The imaging technique is based on digital inline-holographic microscopy, while the image reconstruction is carried out by angular spectrum approach with a custom written software. The system was tested with various biological samples including immortalized mouse astrocyte cells inside a petri dish. Besides the imaging possibility, the capability of automated cell counting and tracking could be demonstrated. By using image sensors capable of video frame rate, time series of cell movement can be captured.
关键词： lensless holographic microscopy,cell imaging,LED,CMOS image sensor,cell culture,cell counting
更新于2025-09-16 10:30:52
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A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications
摘要： In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 μm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~?3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.
关键词： CMOS image sensor,time-of-flight,backside-illumination,SOI detector,lock-in pixel
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Permanent Optimization of Large-FSR Dual-Microring Bandpass Filters
摘要： Energy-ef?cient communication links are crucial for future processors and optoelectronic microchips in order to continue growths in computing and information technologies [1]. Wavelength-division multiplexing (WDM) techniques based on silicon photonic circuits are ideal for high bandwidths data communication systems with small footprints [2,3]. Compact double ring resonators (DRRs) provide excellent properties to realize spectral ?lters with ?at-top transmission characteristics, providing a steep roll-off with low channel crosstalk at dense frequency grids. Hence, cascaded DRRs as illustrated in Fig. 1 (a) are well-suited for integrated WDM systems on optoelectronic microchips. The high refractive index of silicon facilitates small ring perimeters and the wide free spectral range (FSR ∝ 1 Lr ) enables multiplexing tens of data channels to a common bus waveguide. The high energy-ef?ciency which is enhanced by the strong thermo-optic effect (TOE) combined with the short physical lengths is another relevant advantage of the compact size. However, manufacturing variability and associated photonic component deviations remain a serious drawback [4]. Hence, most recent works use thermal heaters for the dynamic ?lter control as well as to counterbalance inevitable manufacturing deviations [5-7]. In this work, we present multilayer compatible 5 and 10μm radius DRR ?lters based on microrings manufactured with deposited amorphous silicon [8]. We demonstrate a permanent correction of manufacturing variations and optimize the spectral properties of DRR ?lters. Such fabrication imperfections which may arise more frequently in multilayer circuits are exempli?ed in Fig. 1 (a) where widths (Δw), heights (Δh), and refractive index (Δn) variations are implemented to one microring; even lowest deviations substantially degrade the ?lter response. A DRR measurement with undesired drop port splitting which was corrected through the SiO2 top cladding by 405 nm laser-trimming one of the rings is shown in Fig. 1 (b); the intermediate trimming spectra are provided in order to guide the eye. The possibility to permanently align ?lters to a given wavelength channel is presented in Fig. 1 (c). In this experiment both 5 μm radius racetracks were alternately trimmed to shorter wavelengths, without degrading the spectrum or the ?lter bandwidths. In summary, several compact DRR ?lters with multiplexers up to 8-channels suitable for multilayer integration at the CMOS back-end-of-line with start-of-art performance were successfully fabricated and tested. Malfunctioning components were identi?ed and optimized on micron-scales by a post-fabrication trimming method. The proposed correction method for DRR multiplexers allows adjusting ?lters to a prespeci?ed wavelength channel and enables more generalized concepts which do not require a thermal heater for each ring thereby mitigating detrimental thermal crosstalk and lowering the overall energy consumption.
关键词： manufacturing variability,Wavelength-division multiplexing (WDM),spectral ?lters,double ring resonators (DRRs),silicon photonic circuits,thermal heaters,Energy-ef?cient communication links,laser-trimming,amorphous silicon,CMOS back-end-of-line
更新于2025-09-16 10:30:52
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[Semiconductors and Semimetals] Future Directions in Silicon Photonics Volume 101 || Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
摘要： Si-photonics is based on the mature process technology developed over decades for the realization of ever more complex complementary metal oxide semiconductor (CMOS) integrated circuits on Si (001) exact wafer orientations. One of the key components for full scale functionality of Si-photonics circuitry is the integrated laser emitter, as also exemplified in this volume of “Semiconductors and Semimetals,” where the present status of development of various concepts for both hybrid as well as monolithic integrated laser sources on CMOS-compatible Si (001)-substrate are presented and discussed. These concepts for laser integration can be categorized into three main areas: (i) hybrid integration concepts by laser die or wafer bonding (see also volume 99 of this series, chapters “Quantum dot lasers for silicon photonics” by Arakawa et al.; “Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration” by Sun and Lourdudoss; “Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications” by Volz et al.; “Growth of III-V semiconductors and lasers on silicon substrates by MOCVD” by Shi and Lau), (ii) heteroepitaxial deposition of lattice-mismatched, standard III/V-semiconductor laser stacks (see also volume 99 of this series chapters “Building blocks of silicon photonics” by Vivien et al.; “Heterogeneously integrated III–V photonic devices on Si” by Matsuo), and (iii) lattice-matched epitaxial growth of Ga(NAsP)-based laser on CMOS-compatible Si (001) in this chapter.
关键词： Ga(NAsP),CMOS,monolithic integration,laser integration,Si-photonics
更新于2025-09-16 10:30:52
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Complementary metal oxide semiconductor (CMOS) compatible gallium arsenide metal-semiconductor-metal photodetectors (GaAs MSMPDs) on silicon using ultra-thin germanium buffer layer for visible photonic applications
摘要： The monolithic integration of III–V materials on silicon appears as the most promising, cost-effective, and versatile method for next-generation optoelectronic devices. Here, we report on GaAs metal-semiconductor-metal photodetectors integrated on an Si substrate by metal-organic chemical vapor deposition. The device architecture is based on a GaAs active layer grown on Si via ultrathin, low-temperature Ge buffer layers. The Ge-on-Si acts as a “virtual” substrate to reduce the overall structural defects in the GaAs device layers. The metal-semiconductor junction characteristics were optimized to effectively suppress the dark current and passivate the interface defects. This was achieved through the insertion of an ultrathin Al2O3 interlayer at the metal/GaAs interface. The results show that a Schottky barrier height of 0.62 eV and 0.8 eV for electrons and holes, respectively, can be achieved. Circular devices with diameters ranging from 30 to 140 μm were fabricated. The measured room temperature dark current is ～48 nA for an applied reverse bias of 1.0 V and a device diameter of 30 μm. Additionally, the GaAs metal-semiconductor-metal structure exhibited a remarkable photoresponsivity and detectivity values of (0.54 ± 0.15) A/W and ～4.6 × 1010 cm Hz1/2 W?1 at 5 V reverse bias, 850 nm, respectively. The proposed method offers great potential for the monolithic integration of GaAs on an Si platform. Furthermore, this technique can be extended to other III–V materials and lattice mismatched systems for high-performance multiple band optoelectronics.
关键词： gallium arsenide,visible photonic applications,metal-semiconductor-metal photodetectors,germanium buffer layer,CMOS
更新于2025-09-16 10:30:52
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Power Efficient Current Driver Based on Negative Boosting for High-Speed Lasers
摘要： Vertical-cavity surface-emitting lasers (VCSELs) are commonly used in high-speed optical communication and 3D sensing applications. Both of these applications require high switching frequency and a short rise time of the VCSEL current. The parasitic inductance of the wire (connecting the driver with VCSEL) makes it challenging to achieve a short rise time, which often incur increased supply voltage and excessive power consumption. This paper utilizes a momentary boosting in supply voltage to overcome the parasitic inductance of the wire with minimal power overhead. The proposed technique uses a precalculated boosting capacitance to produce negative voltage for common-anode VCSELs. The boosting capacitance provides the required amount of charge during the rising transition and automatically disconnects itself in steady-state. Circuit simulations reveal up to three times shorter rise time at the negligible cost of less than 10% power overhead.
关键词： negative supply boosting,vertical cavity surface emitting lasers (VCSEL),switching circuits,CMOS laser drivers,pulsed laser diode driver
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Ultraviolet Micro Optical-Fiber Spectrometer Based on Linear array CMOS
摘要： An ultraviolet micro optical-fiber spectrometer based on linear array CMOS is designed. The resolution is better than 0.1 nm in the range of 180-290nm. The wavelength error after calibration is less than 0.03 nm.
关键词： Optical-Fiber Spectrometer,FPGA,CMOS
更新于2025-09-16 10:30:52
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Hybrid External Cavity Laser with an Amorphous Silicon-Based Photonic Crystal Cavity Mirror
摘要： The authors present results on the performance of a hybrid external cavity photonic crystal laser-comprising semiconductor optical ampli?er, and a 2D photonic crystal cavity fabricated in low-temperature amorphous silicon. The authors demonstrate that lithographic control over amorphous silicon photonic crystal cavity-resonant wavelengths is possible, and that single-mode lasing at optical telecommunications wavelengths is possible on an amorphous silicon platform.
关键词： nanophotonics,silicon photonics,amorphous silicon,CMOS processing,photonic crystals,telecommunications,lasers
更新于2025-09-16 10:30:52