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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • contrast stretch
  • CMOS image sensor
  • point-of-care (POC) diagnosis
  • bio-microfluidic imaging
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Xi’an University of Technology
183 条数据
?? 中文（中国） ▾

  • [IEEE 2019 IEEE International Conference on Engineering Veracruz (ICEV) - Boca del Rio, Veracruz, Mexico (2019.10.14-2019.10.17)] 2019 IEEE International Conference on Engineering Veracruz (ICEV) - Matrix array of CMOS photodetectors for brain transillumination

    摘要： The main structures of pn junction CMOS photodetectors are analyzed for transillumination technique with the purpose of analyzing organic materials. The selection of the right photodetector is made for the application of a matrix array for the integration of an integrated circuit for brain transillumination. An N-well / P- substrate photodiode designed in 0.5μm CMOS technology is presented, considering its spectral range of 700nm, also the depth of doping in the structure to improve photon collection. A first 24x24 μm photodiode was designed, an array of 5x5 photodiodes using the structure of the first photodiode, and finally a second arrangement of 5x5 using the above array.

    关键词： CMOS,CDD,transillumination

    更新于2025-09-12 10:27:22

  • [IEEE 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Miramar Beach, FL, USA (2019.8.19-2019.8.21)] 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) - Advanced Software for User Interface, User Control, Data/Image Input, and Test Automation for Infrared Led Scene Projectors

    摘要： In order to adequately control, test, and analyze Infrared Scene Projectors (IRSP), a user interface needed to be developed to maximize user efficiency. The IRSP control interface was developed for high performance image processing, automated testing, and data capture/analysis.

    关键词： MWIR,Infrared LED,Superlattice LED,Hybrid,CMOS,Control Interface,IR Scene Projection

    更新于2025-09-12 10:27:22

  • Analysis of electroluminescence spectra from high optical-power density forward-biased silicon-led in standard CMOS technology

    摘要： A Si-LED with high-power density p+-n junction and wedge-shaped electrodes was fabricated by standard complementary metal oxide-semiconductor (CMOS) process, and its electroluminescence (EL) spectra were measured at different forward currents. By studying the EL spectra, two interesting phenomena were found. One was that the main peak of EL spectra transited from long wavelength (1135 nm) to short wavelength (1078 nm) along with the forward current increased. The other was that two light emission peaks with energy larger than band gap (Eg) were observed. For the first time, reasonable explanations to the two phenomena were given. Here, the peak shift is attributed to that, with forward current increased, the electron-hole pair recombination of the bound excitons without assist of phonons, increases faster than that of those bound or free excitons with assist of phonons. And the existence of two energy-high light emission peaks is resulted from that, under strong electric field, hot holes absorb one or two phonons from the crystal lattice and then recombine with electrons in conduction band.

    关键词： Wedge-shaped pinpoint electrode,CMOS standard technology,Electroluminescence (EL) spectra,Silicon-based light-emitting devices (Si-LEDs),Strong electric field

    更新于2025-09-12 10:27:22

  • Characteristics of an organic photodetector with a conjugated donor and non-fullerene acceptor for indirect X-ray detection

    摘要： In this study, an organic photodetector with a small band-gap donor, PBDB-T, and a non-fullerene acceptor, ITIC, was investigated as the active element in an indirect imaging system using a scintillator of the detector for indirect X-ray imaging. Compared with the common organic photodetector with a P3HT:PC70BM active layer, higher conversion e?ciencies can be expected, because the proposed detector is advantageous for visible-light absorption and carrier transport. The absorption peak of the PBDB-T:ITIC layer was located at 640 nm and was not well-matched with the emission properties of a CsI(Tl) scintillator. Therefore, a ZnSe(Te) scintillator with an emission peak at 620 nm was also tested. Compared with the P3HT:PC70BM detector, the ZnSe(Te)-coupled detector with the PBDB-T:ITIC = 1:1 active layer was 191% higher in collected current density (CCD) and 205% higher in sensitivity. The frequency response was measured with a 520 nm green LED. The detector with the PBDB-T:ITIC layer showed the -3 dB cut-o? frequency of 31.5 kHz, which was higher than the cut-o? frequency of the P3HT:PC70BM detector.

    关键词： Materials for solid-state detectors,Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc),X-ray detectors

    更新于2025-09-12 10:27:22

  • Bridging R2R Printed Wireless 1 Bit‐Code Generator with an Electrophoretic QR Code Acting as WORM for NFC Carrier Enabled Authentication Label

    摘要： Printed electronics are challenged for showing the working concept of the roll-to-roll (R2R) printed 13.56 MHz passive radio frequency identification (RFID) tag for the application in wireless identification (ID) and authentication to prevent counterfeits with the cost of a penny. However, the concept of the penny RFID tag is not successful yet because of the major limit in integrating a number logic gates by a high throughput R2R printing method. Herein, a new way of printed electronics is developed by integrating an electrophoretic quick response (QR) code as write once read many type of memory circuitry to integrate with a R2R printed wireless 1-bit code generator. Through the electrophoretic QR code integration with the wireless 1-bit code generator, only six logic gates (12 thin film transistors) are enough to wirelessly provide 2953 bytes of authentic information by utilizing two functions of smartphone, near field communication, and camera.

    关键词： R2R printing,QR code,NFC label,CMOS clock,authentication

    更新于2025-09-12 10:27:22

  • Integrated color photodetectors in 40 nm standard CMOS technology

    摘要： For the further integration of receivers in multi-color visible light communication systems, a novel color photodetector (PD) was designed and fabricated by using a 40 nm standard complementary metal oxide semiconductor (CMOS) process without any process modifications. The PD consists of CMOS photodiode and two-dimensional (2D) polysilicon subwavelength grating above the photodiode. The 2D polysilicon grating is controlled in structural parameters to realize color filtering, based on guided-mode resonance, for the first time in a standard CMOS process. Here three kinds of color PDs were designed to respond to the three primary colors. The measured results demonstrate that the color PDs exhibit wavelength selectivity in the visible range (400-700 nm) and the maximum peaks in the spectral response curves of them are at 660 nm (red), 585 nm (green) and 465 nm (blue), respectively. In addition, the added 2D polysilicon grating almost does not reduce the responsivity of the photodiodes.

    关键词： two-dimensional polysilicon subwavelength grating,Color photodetector,visible light communication,complementary metal oxide semiconductor (CMOS)

    更新于2025-09-12 10:27:22

  • Ultracompact Camera Pixel with Integrated Plasmonic Color Filters

    摘要： Photodetector size imposes a fundamental limit on the amount of information that can be recorded by an image sensor. Compact, high-resolution sensors are generally preferred for portable electronic devices such as mobile phones and digital cameras, and as a result, a significant effort has been invested in improving the image quality provided by small-area image sensors. Reducing photodetector size, however, still faces challenges in implementation requiring improvements in current technology to meet the demand for ultracompact imaging systems such as cameras. An issue with a decrease in size is associated with photodetectors utilizing color filters. In most commonly used camera designs these filters are made of dyes or pigments and incompatible with the complementary metal-oxide-semiconductor fabrication process. They are, therefore, fabricated in two different technological processes and require subsequent alignment. As the pixel size decreases, the alignment of these layers becomes challenging. Furthermore, dye-based filters need to have a thickness of the order of micrometers to ensure sufficient absorption. Here a compact, low-cost color sensor is proposed and experimentally demonstrated utilizing monolithically integrated plasmonic antennas that have a nanoscale thickness and are fabricated in the same technological process with photodetector matrix.

    关键词： CMOS,planar technology,pixel,plasmonics,photodetectors

    更新于2025-09-11 14:15:04

  • Carbon-nanotube computer scaled up

    摘要： Electronic devices that are based on carbon nanotubes have the potential to be more energy efficient than their silicon counterparts, but have been restricted in functionality. This limitation has now been overcome. See Article p.595

    关键词： microelectronic devices,silicon transistors,PMOS,CMOS technology,carbon nanotubes,NMOS

    更新于2025-09-11 14:15:04

  • Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides

    摘要： The formation of optical solitons arises from the simultaneous presence of dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support optical solitons harness high field confinement and flexibility in dispersion engineering for significantly smaller footprints and lower operating powers compared to fiber-based equivalents. High-order solitons evolve periodically as they propagate and experience a temporal narrowing at the start of each soliton period. This phenomenon allows strong temporal compression of optical pulses to be achieved. In this paper, soliton-effect temporal compression of optical pulses is demonstrated on a CMOS-compatible ultra-silicon-rich nitride (USRN) waveguide. We achieve 8.7× compression of 2 ps optical pulses using a low pulse energy of ～16 pJ, representing the largest demonstrated compression on an integrated photonic waveguide to date. The strong temporal compression is confirmed by numerical calculations of the nonlinear Schr?dinger equation to be attributed to the USRN waveguide’s large nonlinearity and negligible two-photon absorption at 1550 nm.

    关键词： ultra-silicon-rich nitride,nonlinear Schr?dinger equation,pulse compression,optical solitons,CMOS-compatible

    更新于2025-09-11 14:15:04

  • A Hybrid THz Imaging System With a 100-Pixel CMOS Imager and a 3.25–3.50 THz Quantum Cascade Laser Frequency Comb

    摘要： The terahertz frequency range beyond 3 THz has exciting potential to have a transformative impact in a wide range of applications, including chemical and biomedical sensing, spectroscopy, imaging, and short-distance wireless communication. While there have been significant advancements in silicon-based THz imagers in the frequency ranges below 1 THz, technological development beyond 3 THz has been impeded by the lack of solid-state sources in this frequency range. In addition, the design space beyond 3 THz opens up fundamentally new challenges across electronics and the electromagnetic interface. In this spectral range, the wavelength is small enough (λox ≈ 50 μm at 3 THz) that a vertical via from the top antenna layer to the detector is a distributed element (transmission line or radiator). In this letter, we follow a careful circuits-electromagnetics co-design approach toward a hybrid imaging system with a 100-pixel CMOS imager that interfaces with a THz quantum cascade laser frequency comb that spans 3.25–3.5 THz with mode spacing of 17 GHz. The array chip, while designed for an optimal operation across 2.7–2.9 THz, demonstrates an average noise equivalent power (NEP) (across pixels) of 1260 pW/√Hz between 3.25–3.5 THz and a projected NEP of 284 pW/√Hz across the design range of 2.7–2.9 THz. To the best of our knowledge, we demonstrate for the first time full THz imaging in a hybrid quantum cascade laser (QCL)–CMOS fashion. This approach allows future works to leverage both QCL and CMOS technologies to demonstrate new technological advances for systems in the 1–10 THz range.

    关键词： hybrid imaging,quantum cascade laser,silicon,THz imaging,CMOS,terahertz,imaging,detector

    更新于2025-09-11 14:15:04