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- 2018
- contrast stretch
- CMOS image sensor
- point-of-care (POC) diagnosis
- bio-microfluidic imaging
- Optoelectronic Information Science and Engineering
- Xi’an University of Technology
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[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Design of a radiation-tolerant high-speed driver for Mach Zender Modulators in High Energy Physics
摘要： This paper presents the integrated circuit design, targeting a CMOS 65 nm 1.2 V technology, of a high-speed driver that provides the differential input signals to a Mach Zender Modulator (MZM), and allows tuning of the MZM operating point through adjustment of the bias voltage. A multi-voltage isolated domain circuit through deep n-well trenches, to face the high voltage swing and the bias regulation requirements of the MZM. The MZM device, whose prototype has been implemented in silicon photonics iSiPP50G technology, is emerging as a promising solution for radiation tolerant, several hundreds of Mrad, and high-speed, in the range of 10 Gbps, optical links. These stringent requirements are needed in high energy physics experiments in the upgrade of the Large Hadron Collider or in future Linear Colliders.
关键词： High-speed CMOS driver,Mach-Zender Modulator driving circuit,Radiation tolerance,High energy physics
更新于2025-09-11 14:15:04
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Integrated RF Passive Low Pass Filters in Silicon Photonics
摘要： The integration of passive radio frequency (RF) components, such as resistors, capacitors, and inductors, requires a relatively large area on complementary metal oxide semiconductor (CMOS) chips, which is not cost-effective in developing optical receiver front-ends. This could be addressed by implementing passive RF components on silicon photonics chips. In this work, we present an on-chip passive RF low-pass filter coupled to an integrated photodetector. This study demonstrates that passive RF analog processing can be implemented in a commercial silicon photonics platform. The performance of the implemented RC filters is reported at frequencies up to 15 GHz.
关键词： low pass filters,photonic integrated circuits,silicon photonics,CMOS integrated circuits,passive RF circuits
更新于2025-09-11 14:15:04
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From EBIC images to qualitative minority carrier diffusion length maps
摘要： A novel method is presented with the aim to perform minority carrier di?usion length map on cross-sectional samples. The method is based on one Electron-Beam Induced Current (EBIC) acquisition and on the analyze of the EBIC signal slope variation on each scanned points. This method is applied on a pinned photodiode array realized on a low doped silicon epitaxy, and the electron di?usion length map which is extracted is in good accordance with our expectation taking into account the doping distribution of the device. A TCAD simulation also con?rms quantitatively the measured di?usion length map. Advantages and drawbacks of this method are discussed in this study.
关键词： CMOS image sensors,CMOS,Scanning electron microscopy (SEM),Simulation,Electron-beam-induced current (EBIC),Deep submicron process,Solid-state image sensor,Semiconductor material measurements
更新于2025-09-10 09:29:36
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[Springer Theses] CMOS-Compatible Key Engineering Devices for High-Speed Silicon-Based Optical Interconnections || CMOS-Compatible Efficient Fiber-to-Chip Coupling
摘要： In this chapter, we study the fiber-to-chip coupling problem in silicon-based optical interconnections. It mainly includes: 1. We have designed and demonstrated a series of fully CMOS-compatible single-tip inverse tapers for edge coupling. We use the SiO2 gap and deep etching method between the taper tip and the edge of the chip to process the high-quality taper tip, and study the effect of the design parameters on the coupling efficiency. We found that the device length has a obvious effect on the device coupling loss, mainly due to the large waveguide propagation loss. Finally, for a inverse taper with a taper tip width of 0.16 μm and a length of 40 μm, the coupling loss of TE and TM at the wavelength of 1550 nm are 1.13 dB/facet and 1.81 dB/facet respectively. The ?1 dB bandwidth is larger than 180 nm. 2. We designed and demonstrated an ultra-compact polarization-insensitive optical combiner. The working principle is based on the two-mode interference. The length of the device is only 5.1 μm, and the excess loss of the two polarizations is both less than 0.1 dB. 3. We designed and demonstrated a novel double-tip inverse taper which consists of two inverse tapers and an ultra-compact polarization-insensitive optical combiner. We have studied the effect of design parameters on coupling loss. And a edge coupler with only 40 μm length is proved. When the wavelength is 1550 nm, the coupling loss for TE and TM are 1.10 dB/facet and 1.52 dB/facet respectively, and the ?1 dB bandwidth is more than 160 nm. Its processing is completely CMOS compatible, and it can be further optimized by the previous multi-layer, multi-stage and cantilever technology.
关键词： double-tip inverse taper,polarization-insensitive optical combiner,fiber-to-chip coupling,inverse tapers,CMOS-compatible,silicon-based optical interconnections,two-mode interference
更新于2025-09-10 09:29:36
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[Springer Theses] CMOS-Compatible Key Engineering Devices for High-Speed Silicon-Based Optical Interconnections || Summary and Future Work
摘要： This dissertation mainly focuses on four important scientific problems in silicon photonics, i.e., silicon electro-optic modulator, advanced multiplexing mechanism, polarization controlling and fiber-to-chip coupling. It systematically puts forward the design theory of silicon electro-optic modulator, investigates advanced multiplexing mechanisms, studies polarization-controlling devices, and explores fiber-to-chip coupling techniques. The research demonstrates high-performance devices fabricated with commercial 130 nm CMOS process, including a high-speed carrier-depletion silicon electro-optic modulator, WDM devices, PDM devices, MDM devices, and ultra-compact polarization splitter-rotators. The work aims to contribute to the field of silicon photonics by providing CMOS-compatible solutions for high-speed silicon-based optical interconnections.
关键词： multiplexing mechanism,CMOS-compatible,fiber-to-chip coupling,polarization controlling,electro-optic modulator,silicon photonics
更新于2025-09-10 09:29:36
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Light-Harvesting CMOS Power-Supply System for 0–10-mW Wireless Microsensors
摘要： Wireless microsensors in consumer products, homes, hospitals, and factories incorporate sensing, processing, and transmission intelligence that can save money, energy, and lives. Although their tiny batteries deplete quickly, harvesting light energy can replenish what they supply. Still, a 1-mm2 PV cell can only generate up to 150 μW of the mW's that a wireless microsensor can consume. The battery-assisted light-powered harvester presented here therefore draws 10–130 μW from a 1 × 1-mm2 PV cell and assistance from a battery to supply a 10-mW load and recharge the battery with excess PV power. The CMOS system regulates its 1-V output within ±28 mV while supplying 10× more power per 1 mm3 with 94.5% efficiency and 38× with 87.8% efficiency than the best light-harvesting microsystem reported. Unlike others whose efficiencies peak at one power level, efficiency here is 94.5% across vPV's 10–130-μW and PLD's 0.5–10-mW with a 18-μH 3 × 3 × 1.5-mm3 inductor and 87.8% with a 22-μH 1.6 × 0.8 × 0.8-mm3 device.
关键词： Ambient light,switched-inductor converter,wireless microsensor,energy harvester,power supply,photovoltaic (PV) cell,CMOS microsystem,charger
更新于2025-09-10 09:29:36
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[IEEE IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Valencia, Spain (2018.7.22-2018.7.27)] IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - CSEM Space Lidars for Imaging and Rangefinding
摘要： Flash imaging LiDAR is recognized as a primary candidate sensor for several autonomous navigation phases such as for example, for safe precision landing on celestial bodies such as Mars or Jupiter and Saturn moons, and for rendezvous operations and docking/capture necessary for sample return missions, satellite servicing, and space debris removal. This paper presents a “hybrid flash imaging LiDAR” breadboard developed in the frame on an ESA activity: the Miniature Imaging Laser Altimeter (MILA) project. A hybrid implementation of a flash imaging LiDAR based on a single photon detection concept was proposed to address requirements involving the provision of distance measurements and 3D mapping at a few kilometers to a few meters to the target at relative velocity ranging from a few m/s to a few tens of m/s. It is shown that the breadboard (BB) provides distance measurement with precision of 5 cm at distances until either 300 m or 1.1 km depending on the operation mode selected with static and moving targets.
关键词： CMOS,flash imaging LiDAR,SPAD,LiDAR
更新于2025-09-10 09:29:36
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A New Analytical Charge Transfer Model for Time-of-Flight Image Sensors
摘要： A powerful tool for analyzing the performances of an image sensor designed for time-of-flight measurement purposes, the impulse response measurement (IRM), is presented. A way to measure the charges diffusion time (time for the photogenerated charges to be collected by the photodiode) using the analysis of an IRM is given. An unexpected phenomenon that occurs when performing a specific IRM is then showcased: performing two successive transfers, a short duration one followed by a long duration one is actually less efficient than performing a single transfer of long duration (same duration as the second transfer in the first case). Accordingly, a mathematical sufficient condition on the charge transfer efficiency function (CTEF) is enounced. A physical modeling based on thermionic emission theory and the influence of the potential barrier’s width on its effective height is presented. The model leads to a new CTEF expression that fulfills the mathematical requirement. Finally, a numerical simulation with the new CTEF fitting the experimental IRM data is performed.
关键词： time-of-flight (TOF),thermionic emission theory,Dirac-light pulse (DLP),diffusion time,impulse response measurement (IRM),Charge transfer efficiency function (CTEF),CMOS image sensor (CIS),light image detection and ranging (LIDAR),sense node (SN)
更新于2025-09-10 09:29:36
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Fabrication and Measurement of a Suspended Nanochannel Microbridge Resonator Monolithically Integrated with CMOS Readout Circuitry
摘要： We present the fabrication and characterization of a suspended microbridge resonator with an embedded nanochannel. The suspended microbridge resonator is electrostatically actuated, capacitively sensed, and monolithically integrated with complementary metal-oxide-semiconductor (CMOS) readout circuitry. The device is fabricated using the back end of line (BEOL) layers of the AMS 0.35 μm commercial CMOS technology, interconnecting two metal layers with a contact layer. The fabricated device has a 6 fL capacity and has one of the smallest embedded channels so far. It is able to attain a mass sensitivity of 25 ag/Hz using a fully integrable electrical transduction.
关键词： nanochannel,NEMS,suspended channel,resonators,CMOS-NEMS
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Electronic ICs for Silicon Photonic Transceivers
摘要： We present progress on high-speed electronic ICs for Silicon Photonic transceivers. The design freedom offered by Silicon Photonics is exploited to generate multilevel modulation formats, reduce power consumption and physical footprint or increase speed. We show drivers and receivers integrated in CMOS and SiGe BiCMOS processes.
关键词： CMOS and SiGe BiCMOS integrated circuits
更新于2025-09-10 09:29:36