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Triple Gate Polycrystalline-Silicon-Based Ion-Sensitive Field-Effect Transistor for High-performance Aqueous Chemical Application
摘要： In this study, we developed a polycrystalline-silicon (poly-Si) thin-film transistor (TFT)-based, high-performance ion-sensitive field-effect transistor (ISFET) pH sensor that far surpasses the sensitivity of dual-gate pH sensors. A Triple gate structure on the same plane as the channel of the ISFET has been proposed to enhance the pH sensitivity. In a poly-Si TFT-based ISFET, a Triple gate is more advantageous than a bottom-gate for increasing capacitive coupling with the top-gate. As a result, the pH sensitivity by Triple gate (TG) mode detection using the Triple gate is much greater than single-gate (SG) mode detection using the top-gate, or dual-gate (DG) mode detection using the bottom-gate. The sensitivity of the TG mode greatly increased compared with the sensitivity of the conventional SG mode or DG mode. The measured pH sensitivity was 57.75 ± 0.77 mV/pH in the SG mode, 467.08 ± 9.92 mV/pH in the DG mode. In particular, the TG mode gives a maximum sensitivity of 1283.56 ± 45.54 mV/pH for a sensing membranes having a theoretical Nernstian pH response (59.15 mV/pH at 25 °C). Furthermore, we measured the hysteresis and drift characteristics, and found that the TG mode has improved non-ideal behavior compared to the SG and DG modes. Therefore, the poly-Si TFT-based TG ISFET pH sensor has the potential to become a promising biosensor application platform, with excellent sensitivity and stability.
关键词： ion-sensitive field effect transistor,Triple gate,capacitive coupling effect
更新于2025-09-23 15:22:29
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[IEEE 2018 18th Mediterranean Microwave Symposium (MMS) - Istanbul, Turkey (2018.10.31-2018.11.2)] 2018 18th Mediterranean Microwave Symposium (MMS) - Optocoupler Effect on In-Vivo Measurements Characterization for Human Body Communication
摘要： Body Area Network (BAN) has found intuitive applications in healthcare and medical monitoring, where interconnected electronic terminals are used around a user. In this contest, Human Body Communication (HBC) is a promising technique which uses the human body as a communication medium. Almost measures targeting the HBC channel characterization, the balun has been used to separate the grounds between transceivers. In this work, optocoupler was used for the first time, to decouple transceiver ports from each other and prevent the parasitic return path. Optocoupler’s effect on the measured results was analyzed for both capacitive and galvanic HBC coupling.
关键词： capacitive coupling,body area network,galvanic coupling,balun,optocoupler,human body communication
更新于2025-09-19 17:15:36
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Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide
摘要： We report on the fabrication of capacitively (AC) coupled n+-in-p pixel detectors on magnetic Czochralski silicon substrates. In our devices, we employ a layer of aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) as dielectric and field insulator, instead of the commonly used silicon dioxide (SiO2). As shown in earlier research, Al2O3 thin films exhibit high negative oxide charge, and can thus serve as a substitute for p-stop/p-spray insulation implants between pixels. In addition, they provide far higher capacitance densities than SiO2 due to their high dielectric constant, permitting more efficient capacitive coupling of pixels. Furthermore, metallic titanium nitride (TiN) bias resistors are presented as an alternative to punch-through or poly-Si resistors. Devices obtained by the above mentioned process are characterized by capacitance–voltage and current–voltage measurements, and by 2 MeV proton microprobe. Results show the expected high negative charge of the Al2O3 dielectric, uniform charge collection efficiency over large areas of pixels, and acceptable leakage current densities.
关键词： Capacitive coupling,Al2O3,Atomic layer deposition (ALD),Pixel detector
更新于2025-09-19 17:13:59
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Adiabatic two-qubit gates in capacitively coupled quantum dot hybrid qubits
摘要： The ability to tune qubits to flat points in their energy dispersions (“sweet spots”) is an important tool for mitigating the effects of charge noise and dephasing in solid-state devices. However, the number of derivatives that must be simultaneously set to zero grows exponentially with the number of coupled qubits, making the task untenable for as few as two qubits. This is a particular problem for adiabatic gates, due to their slower speeds. Here, we propose an adiabatic two-qubit gate for quantum dot hybrid qubits, based on the tunable, electrostatic coupling between distinct charge configurations. We confirm the absence of a conventional sweet spot, but show that controlled-Z (CZ) gates can nonetheless be optimized to have fidelities of ~99% for a typical level of quasistatic charge noise (σε ? 1 μeV). We then develop the concept of a dynamical sweet spot (DSS), for which the time-averaged energy derivatives are set to zero, and identify a simple pulse sequence that achieves an approximate DSS for a CZ gate, with a 5× improvement in the fidelity. We observe that the results depend on the number of tunable parameters in the pulse sequence, and speculate that a more elaborate sequence could potentially attain a true DSS.
关键词： charge noise,adiabatic two-qubit gates,capacitive coupling,quantum dot hybrid qubits,dynamical sweet spot
更新于2025-09-11 14:15:04
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A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations
摘要： In this brief, closed-form analytical expressions are obtained to accurately calculate the oxide and substrate (both lateral/vertical) capacitances of the π-equivalent circuit model for on-chip tapered spiral inductors. A lateral RC substrate network using the above-mentioned expressions is shown to significantly improve the model accuracy, especially with lower substrate resistivities. Furthermore, improvement in Qmax with reverse excitation in tapered spirals is also accurately predicted by the proposed model. The accuracy of the proposed model is validated till 15 GHz using several inductor geometries across process parameters suitable for the design of RF circuits. Excellent agreement is observed between the model, electromagnetic simulations, and measurements.
关键词： CMOS,forward excitation,spiral inductor,substrate model,taper,reverse excitation,Capacitive coupling,radio frequency integrated circuits,quality factor
更新于2025-09-09 09:28:46
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Improved pH Sensitivity and Reliability for Extended Gate Field-Effect Transistor Sensors Using High- <i>k</i> Sensing Membranes
摘要： In this study, we fabricated extended-gate (EG) ?eld-effect transistor (FET) pH sensors with dual-gate (DG) structures, using a range of dielectric sensing membranes (SiO2, Si3N4, HfO2 and Ta2O5) to vary their sensitivity. The fabricated EGFETs consisted of a silicon-on-insulator (SOI)-based metal-oxide semiconductor ?eld-effect transistor (MOSFET) transducer and an EG sensor. We ampli?ed the sensitivity of the device far beyond the Nernst limit (59 mV/pH), which is the theoretical maximum of conventional ion-selective FET (ISFET) sensing, by applying capacitive coupling. Among the evaluated dielectric sensing membranes, we obtained the highest sensitivity (478 mV/pH), low hysteresis (100.2 mV) and drift rate (24.6 mV/h) from the pH sensor with a Ta2O5 membrane. Hence, we expect DG FET con?gurations using Ta2O5 ?lms as EG sensing membranes to be useful for high performance biosensor applications, as they satisfy the requirements for sensitivity, stability and reliability.
关键词： Ion-Sensitive Field-Effect Transistor,Sensitivity,High-k Sensing Membrane,Dual-Gate Field-Effect Transistor,pH Sensor,Capacitive Coupling
更新于2025-09-09 09:28:46
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Achieving enhanced pH sensitivity using capacitive coupling in extended gate FET sensors with various high-K sensing films
摘要： Sensing properties of various high-k sensing membrane, such as SnO2, HfO2, ZrO2, and Ta2O5, in dual gate extended-gate field-effect transistor (EGFET) were investigated. By adapting the dual-gate structure, high sensitivity exceeding the conventional Nernstian limit on sensitivity (59.15 mV/pH at 25 °C) was realized due to capacitive coupling effect. As a results, it was confirmed that dual-gate EGFET with Ta2O5 sensing membrane which has high permittivity shows the highest sensitivity of 478.0 mV/pH as well as excellent hysteresis voltage and drift rate characteristics.
关键词： Glass EG detector,Dual gate poly-Si TFT transducer,High-k membrane,Highest sensitivity,Capacitive coupling,EGFET pH sensor
更新于2025-09-04 15:30:14