- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Enhanced efficiency and stability of perovskite solar cells by 2D perovskite vapor-assisted interface optimization
摘要： Organic-inorganic perovskites solar cells (PSCs) have attracted great attention due to their rapid progress in power conversion efficiency (PCE). However, there is still an enormous challenge to achieve both high efficiency and stability devices as the decomposition of perovskite materials under humid and light conditions. Herein, we demonstrate that high efficiency and stability of PSCs can be obtained by the reaction of three-dimensional (3D) perovskite with 1, 4-butanediamine iodide (BEAI2) vapor. The incorporation of BEAI2 intensively promotes the crystallization of perovskite film with large grain size (~500 nm). Further characterization reveals that the post-treatment perovskite film delivered low interface trap density with long carrier lifetime (> 200 ns), long carrier diffusion length (> 600 nm) and large carrier mobility (> 1.5 cm2 V-1 S-1). Solar cells employing such post-treatment films demonstrated 19.58% PCE without hysteresis. Moreover, the post-treatment devices can retain over 90% original efficiencies stored under ambient atmospheric conditions and exhibit better stability under 85 °C and continuous illumination as a two-dimensional (2D) perovskite thin layer is formed on the surface/or at the grain boundaries of 3D perovskite. This study offers an effective way to obtain PSCs with high efficiency and stability.
关键词： Mobility,Post-treatment,Perovskite solar cells,2D/3D perovskite,Carrier diffusion length
更新于2025-09-19 17:13:59
-
Degradation prediction of a γ-ray radiation dosimeter using InGaP solar cells in a primary containment vessel of the Fukushima Daiichi Nuclear Power Station
摘要： Indium gallium phosphide (InGaP) solar cell with a superior high-radiation resistance is expected to be a powerful candidate for a dosimeter under a high-radiation dose rate environment. In this study, in order to predict the lifetime as the dosimeter using the InGaP solar cell, we clarify the effect of minority-carrier diffusion length (L) on a radiation-induced current as a dose signal in the InGaP solar cell by irradiation tests and empirical calculations. In the irradiation tests, the short-circuit current density (Jsc) as a function of the γ-ray dose rate is measured to estimate the L for the InGaP solar cell by irradiation tests. The operational lifetime as a detector using the InGaP solar cell under various dose rates is estimated by using the empirical calculations based on the relation between the L and absorbed dose. The results suggest that the dosimeter using InGaP solar cell is able to be used during more than 10 h in the primary containment vessel of the Fukushima Daiichi Nuclear Power Plant and it has a high potential of being a radiation-resistant dosimeter that would contribute to the decommissioning.
关键词： solar cell,operation lifetime,decommissioning,radiation-induced current,minority-carrier diffusion length,Dosimetry,InGaP compound semiconductor,degradation prediction
更新于2025-09-16 10:30:52
-
Tellurium-based Double Perovskites A2TeX6 with Tunable Bandgap and Long Carrier Diffusion Length for Optoelectronic Applications
摘要： Lead-free hybrid perovskites have attracted immense interest as environmentally friendly light absorbers. Here, we report on tellurium (Te)-based double perovskites A2TeX6 (A= MA, FA or BA, X = Br- or I-, MA= CH3NH3, FA= CH(NH2)2, BA= benzylamine) as potentially active materials for optoelectronic devices. This perovskites exhibit a tunable bandgap (1.42 eV-2.02 eV), a low trap density (～1010 cm-3), and a high mobility (～ 65 cm2 V-1 s-1). Encouragingly, the MA2TeBr6 single crystal with a bandgap of 2.00 eV possesses a long carrier lifetime of ~6 μs and corresponding carrier diffusion lengths of ~38 μm, which are ideal characteristics for a material for photodetectors and tandem solar cells. Moreover, A2TeX6 perovskites are relatively robust in ambient conditions, being stable for at least two months without showing any signs of phase change. Our findings bring to the forefront a family of lead-free Te-based perovskites for non-toxic perovskite optoelectronics.
关键词： Optoelectronic applications,Long carrier diffusion length,Tunable bandgap,Tellurium-based double perovskites
更新于2025-09-04 15:30:14