Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption

摘要： Depth profiling of the ambipolar carrier lifetime was performed in n-type, 140μm thick silicon carbide (SiC) epilayer using excitation by two-photon absorption (TPA) with a pulsed 586nm laser, and confocal measurement of time resolved photoluminescence (TRPL) decay from the excited region. A depth resolution of ≈10μm was obtained. The PL decay curves were analyzed using a recently developed formalism that takes into account the TPA excitation, carrier diffusion and surface/interface recombination. The carrier lifetime decreases near the top surface of the epitaxial layer as well as near its interface with the substrate.