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A New Catalyst Ti Doped CdO Thin Film for Non-Enzymatic Hydrogen Peroxide Sensor Application
摘要： A new material, Ti doped CdO (Ti: CdO) semiconductor, is firstly reported by this work for electrochemical non-enzymatic hydrogen peroxide (H2O2) sensor applications which was deposited by a simple, versatile and cost-effective chemical spray pyrolysis method on indium doped tin oxide (ITO) substrate. In the basic studies, first, the withstanding of cubic crystal phase along with worthy crystalline nature is discerned on CdO film after Ti doping, here only the preferentially orientated (200) diffraction plane shifted to (111). Subsequently, the irregular spherically shaped CdO nanoparticles (NPs) morphology changed as nearly uniform size with Ti doping is noticed with respect to thermal pyrolytic decomposition process. The existence of Ti atoms in Ti: CdO film is authentically identified and confirmed using EDX and XPS studies respectively. The absorption and emission properties of CdO and Ti: CdO films are studied and confirmed their narrow band gap nature. Importantly, the Ti: CdO film shows pronounced electrocatalytic activity for the reduction of hydrogen peroxide (H2O2) as compared to pure CdO. Hence, the non-enzymatic electrochemical sensing of Ti: CdO electrode shows a lower detection limit 0.4 μM with the linear range of 10-190 μM which displayed a fast amperometric response for 5 s with sensitivity of 0.27 μA μM-1 cm-2 toward H2O2 detection. This result will boost exploring a new opportunity for the deposition of other metal oxides and semiconductors by using a simple chemical spray pyrolysis method for detection of non-enzymatic H2O2 sensor applications.
关键词： H2O2 sensor,and selectivity,Chemical spray pyrolysis,Ti: CdO thin film
更新于2025-09-23 15:23:52
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SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors
摘要： In this research, we have produced Al/CdS nanoparticles-CdO/p-si/Al photodetetor and investigated its optical and electrical characteristics for various optoelectronic applications. The CdO thin film was covered by using sol-gel spin coating method onto the silicon, followed by CdS nanoparticles constitution by the help of SILAR technique. In order to examine the morphological and optical characteristics of fabricated photodetector, the field emission scanning electron microscopy and UV-Vis spectroscopy were utilized, and the band gap of the prepared film was determined as 2,17 eV with the help of these analyzes. The current behavior against the varying voltage values were investigated for the different intensities of solar light conditions and the significant diode parameters were computed by the use of this measurements. As a result of this computation, the barrier height value was found to be 0.49 eV while the ideality factor value was 3.2, and the photoresponse of the photodetector was measured as approximatelly 2.65 × 103. Besides, the transient photocurrent and photocapacitance charactersitics were examined for distinct light conditions. Finally, the interface states were calculated from the capacitance/conductance–voltage (C/G–V) measurements.
关键词： Optical characteristics,SILAR method,Sol-gel method,CdO thin film,Electrical characteristics,CdS nanoparticles
更新于2025-09-12 10:27:22
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Mg doped CdO thin films grown on glass substrate by spray pyrolysis method
摘要： The undoped and various magnesium (Mg) doped cadmium oxide (CdO) thin films were synthesized by spray pyrolysis technique. Structural, optical and morphological examinations of the samples were carried out via various instruments. X-ray diffraction (XRD) and Raman spectroscopic measurements of the samples were performed to obtain structural properties. Ultraviolet (UV)-visible and photoluminescence (PL) spectroscopy measurements as well as scanning electron microscopy (SEM) were employed to characterize optical and morphological properties of the undoped and Mg doped CdO thin film. XRD measurements revealed that both the undoped and Mg doped CdO thin films demonstrated a cubic structure and had preferential orientations along the (200) plane. In the Raman spectrum, it was observed that the peak (266 cm?1) of the first peak belonging to the CdO thin film disappeared and the second main peak (908 cm?1) shifted to higher energies with the Mg dopant. As a result of the absorbance measurements, the band range of the samples showed a shift of the band gap from 2.15 eV to 2.43 eV with the Mg dopant, and the Burstein-Moss effect indicated a shift to gray scale and decreased from 67% to 59% in transmittance measurements. The PL results exhibited that both the undoped and Mg doped CdO thin films had a UV emission of 394 nm (3.15 eV), blue emission of 434 nm (2.86 eV), blue-yellow emission of 540 nm (2.30 eV), 735 nm (1.69 eV) and emission of 782 nm (1.59 eV). The SEM measurements indicated that the CdO thin films changed from pyramidal structures to random shape with Mg dopant.
关键词： optical properties,Mg dopant,CdO thin film
更新于2025-09-09 09:28:46