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[IEEE ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC) - Dresden, Germany (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET
摘要： This study reports the interfacial engineering by means of SAM (Self-assembled monolayer)-based gate dielectric on channel mobility in molybdenum disulfide (MoS2) field-effect transistors (FETs). A gated four-probe method was implemented to eliminate the effect of contact resistance on channel mobility. The formation of SAM significantly plays an important role in the improvement of channel mobility as high as 19 cm2/Vs in MoS2 FETs because the superior interfacial properties can be realized in MoS2/SAM structure. This study opens up interesting direction of interface engineering for research in the applications and developments of 2-dimensional materials-based thin film devices.
关键词： FETs,Interface properties,Channel mobility,Self-assembled monolayer,MoS2
更新于2025-09-23 15:21:01
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Low temperature wet-O <sub/>2</sub> annealing process for enhancement of inversion channel mobility and suppression of <i>V</i> <sub/>fb</sub> instability on 4H-SiC (0001) Si-face
摘要： For improvement of 4H-SiC metal-oxide-semiconductor ?eld-effect-transistor performance, a post-oxidation annealing (POA) process in a wet environment after dry oxidation was systematically investigated. By tuning the wet-POA conditions, we clari?ed that wet-POA at low temperatures is more advantageous for both the enhancement of channel mobility and the suppression of ?atband voltage instability. One of the mechanisms of channel mobility enhancement is attributed to the decrease in the density of traps in oxide near the MOS interface, rather than conventional interface traps. The effects of the wet environment on interfacial properties were also discussed based on oxide growth kinetics on 4H-SiC.
关键词： channel mobility,Vfb instability,MOSFET,4H-SiC,wet-O2 annealing
更新于2025-09-10 09:29:36