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Enhanced photocatalytic activity of TiO2/graphene by tailoring oxidation degrees of graphene oxide for gaseous mercury removal
摘要： We used a simple method of graphene oxide (GO) preparation with different oxidation levels, and control the properties of the TiO2 nanocrystals by tuning the content and oxidation degree of GO to enhance the photocatalytic performance. During the hydrothermal reaction, reduction of GO, formation of TiO2 and chemical bonds between TiO2 and reduced graphene oxide (RGO) was achieved simultaneously. Characterization results showed that TiO2 properties such as crystalline grain and particle size could be tailored by the amount of functional groups, and that crystallinity was also controlled by GO degrees of oxidation. TiO2/RGO photocatalysts showed great efficiency of mercury oxidation, which reached 83.7% and 43.6% under UV and LED light irradiation, respectively. The effects of crystalline grain size and surface chemical properties on Hg0 removal under LED and UV light irradiation were analyzed. In addition, the properties of the photocatalysts before and after UV illumination were investigated, finding that part of Ti-OH on TiO2 surface transformed to Ti-O-Ti. In a nutshell, this work could provide a new insight into enhancing activity of photocatalysts and understanding the photocatalytic mechanism.
关键词： TiO2,Photocatalysis,Chemical Bonds,Elemental Mercury,Reduced Graphene Oxide
更新于2025-09-23 15:23:52
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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Bonds in atomic crystals, energy levels, quantum chemistry and electronegativity visualized by light emitting diodes (LED)
摘要： Chemical bonds are discussed with the example of the group 15 elements N, P and As in light emitting diodes (LED). The colour resp. the light energy visualizes the electronegativity. Pairing LED of different colour as emitters and absorbers (detectors) allows a comparison between their different light energy. Electrons require energy above a given threshold to be excited to the conducting band: That is the (inner) photoelectric effect, an indication of the quantification of energy also in relation to chemical bonds.
关键词： inner photoelectric effect,chemical bonds of the elements N, P and As,visualisation of ionisation energy and electronegativity
更新于2025-09-19 17:13:59
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Beyond the molecular movie: Dynamics of bands and bonds during a photoinduced phase transition
摘要： Ultrafast nonequilibrium dynamics offer a route to study the microscopic interactions that govern macroscopic behavior. In particular, photoinduced phase transitions (PIPTs) in solids provide a test case for how forces, and the resulting atomic motion along a reaction coordinate, originate from a nonequilibrium population of excited electronic states. Using femtosecond photoemission, we obtain access to the transient electronic structure during an ultrafast PIPT in a model system: indium nanowires on a silicon(111) surface. We uncover a detailed reaction pathway, allowing a direct comparison with the dynamics predicted by ab initio simulations. This further reveals the crucial role played by localized photoholes in shaping the potential energy landscape and enables a combined momentum- and real-space description of PIPTs, including the ultrafast formation of chemical bonds.
关键词： Silicon surface,Photoinduced phase transitions,Chemical bonds,Electronic structure,Indium nanowires,Femtosecond photoemission,Ultrafast dynamics
更新于2025-09-10 09:29:36