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Two stage modelling of solar photovoltaic cells based on Sb2S3 absorber with three distinct buffer combinations
摘要： Solar cell research has always been an attraction by virtue of its clean and green status. However, to overcome the implications of high cost and moderate efficiency, there has always been fierce competition to search alternative approach for designing efficient solar cells with optimal performance-cost ratio. Recently, antimony sulfide (Sb2S3) has received substantial attention as an absorber in thin film solar cells due to earth abundance, low cost, non-toxic property and high optical absorption. Still, its performance could not match Si based cells. In this work, we adopted two-stage simulation approach to design Sb2S3 absorber based heterojunction solar cell to enhance efficiency. Initial simulation for configuration optimization was done considering thickness, defect density, recombination (radiative, Auger) effect, carrier density of the Sb2S3 absorber layer. Buffer layer thickness and absorption coefficient optimization was taken up. Further, series and shunt resistance of the device as well as conduction band offset (CBO) at absorber/buffer interface was also optimized at initial stage only. In the next level of simulation, efficiency enhancement was achieved by optimizing optimal back contact metal work function, absorber layer band gap grading and temperature. The aforesaid two-stage optimization yielded efficiency ~24.81%, which is higher than conventional thin film solar cell. The optimal solar cell structure configuration, for Sb2S3 absorber solar cell, suggested a positive CBO of 0.26 eV (e.g.; ZnS buffer layer), a back contact metal work function of 5.1 eV (e.g.; Mo, Au) and band gap grading window ~1.31 to 1.62 eV.
关键词： Conduction band offset,Sb2S3 solar cell,Work function,Band gap grading,Simulation
更新于2025-09-23 15:21:01
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Performance optimization of CH3NH3Pb(I1-xBrx)3 based perovskite solar cells by comparing different ETL materials through conduction band offset engineering
摘要： Numerical simulations can provide the physical insights into the carrier transport mechanism in the solar cells, and the factors influencing their performance. In this paper, perovskite solar cell (PSC) based on the mixed perovskite (CH3NH3Pb(I1-xBrx)3 has been numerically simulated using the SCAPS simulator. A comparative analysis of different electron transport layers (ETLs) based on their conduction band offsets (CBO) has been performed, while Spiro-OMeTAD was used as a hole transport layer (HTL). Among the proposed ETLs, CdZnS performed better and demonstrated the power conversion efficiency (PCE) of 25.20%. Also, the PCE of the PSC has been optimized by adjusting the doping concentrations in the ETL, Spiro-OMeTAD layer, and the thickness of the perovskite light absorber layer. It was found that the doping concentration of 1021 cm?3 for the CdZnS based ETL and 1020 cm?3 for Spiro-OMeTAD are the optimum concentrations values for demonstrating enhanced efficiency. A 600 nm thick perovskite layer has found to be appropriate for the efficient PSC design. For the initial guessing and numerical model validation, the photovoltaic data of a very stable (over one year with PCE ~13%) n-i-p structured (ITO/TiO2/CH3NH3Pb(I1-xBrx)3/Spiro-OMeTAD/Au) PSCs was used. These numerically simulated results signify the optimum performance of the photovoltaic device that can be further implemented to develop the highly efficient PSCs.
关键词： The power conversion efficiency,Hole transport layer,Electron transport layer,Conduction band offset engineering,SCAPS,Perovskite solar cell
更新于2025-09-23 15:19:57
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Effect of Na doping on the performance and the band alignment of CZTS/CdS thin film solar cell
摘要： Alkali doping can suppress deleterious antisite defects in kesterite Cu2ZnSnS4 (CZTS) and improve the open-circuit voltage. In this study, the effects of light Na-doping on the performance and the band alignment of CZTS/CdS thin-film solar cells were investigated. CZTS:Na thin films were fabricated by the spin coating with 10% Na doping on the surface of CZTS. The Na-doping led to the narrower FWHM and larger grain size. The hole concentration and the conductivity were improved due to the NaZn shallow acceptor defects. In addition, Na-doping can improve the band alignment of absorber/buffer interface and inhibit SRH recombination by the Na passivation effect and the suppression of SnZn defects. The typical cliff-like conduction band offset (CBO) was reduced from 0.25 eV in CZTS:Na/CdS to 0.1 eV in CZTS/CdS heterojunction. CZTS:Na device exhibited a higher Voc of 653 mV than that of CZTS/CdS device. The maximum conversion efficiency reached 7.46%, increased by 44% after Na-doping. These results clarify the effect of Na-doping on the band structure of the heterojunction in CZTS solar cells and support a new aspect that synthesis of a surface-doping CZTS:Na absorber has great potential for future research.
关键词： Conduction band offset,Na-doping,Cu2ZnSnS4,Band alignment,Cliff-like
更新于2025-09-19 17:13:59
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Band alignment of atomic layer deposited SiO <sub/>2</sub> on (010) (Al <sub/>0.14</sub> Ga <sub/>0.86</sub> ) <sub/>2</sub> O <sub/>3</sub>
摘要： The (AlxGa1?x)2O3/Ga2O3 system is attracting attention for heterostructure ?eld effect transistors. An important device design parameter is the choice of gate dielectric on the (AlxGa1?x)2O3 and its band alignment at the heterointerface. The valence band offset at the SiO2/(Al0.14Ga0.86)2O3 heterointerface was measured using x-ray photoelectron spectroscopy. The SiO2 was deposited by atomic layer deposition (ALD) onto single-crystal β-(Al0.14Ga0.86)2O3 grown by molecular beam epitaxy. The bandgap of the SiO2 was determined by re?ection electron energy loss spectroscopy as 8.7 eV, while high resolution XPS data of the O 1s peak and onset of elastic losses were used to establish the (Al0.14Ga0.86)2O3 bandgap as 5.0 eV. The valence band offset was determined to be 1.60 ± 0.40 eV (straddling gap, type I alignment) for ALD SiO2 on β-(Al0.14Ga0.86)2O3. The conduction band offset was 2.1 ± 0.08 eV, providing for a strong electron transport restriction.
关键词： x-ray photoelectron spectroscopy,(Al0.14Ga0.86)2O3,SiO2,atomic layer deposition,conduction band offset,band alignment,valence band offset
更新于2025-09-10 09:29:36