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Performance and stability enhancement of Cu(InGa)Se2 solar cells on ultrathin glass by potassium incorporation
摘要： Flexible Cu(InGa)Se2 solar cells fabricated on metal foils and plastics have achieved high conversion efficiency so far. However, metal impurities and low temperature tolerance hinder them from further considerable development. Here, 150 lm-thick ultrathin glass with desirable advantages was applied as substrate for Cu(InGa)Se2 solar cell. Potassium element was doped by a simple method during the post-selenization process. The results showed that the KInSe2 phase existed in K-doped Cu(InGa)Se2 films. The K-doped CIGS films were more compact than the pristine one due to the fact that K incorporated in films could form quasi-liquid alkali-metal-Se compounds and improve the compactness of films. K-incorporated CIGS films exhibited enhanced p-type conductivity and different surface energy level. Consequently, K-doped Cu(InGa)Se2 solar cell achieved an optimal efficiency of 8.3%, which was relatively 43% higher than that of pristine solar cell. Investigation of performance and stability of solar cells manifested that the K incorporation retarded the performance degradation of device during cyclic bending.
关键词： Potassium incorporation,Ultrathin glass,Cu(InGa)Se2,Thin films,Solar energy materials
更新于2025-09-23 15:21:01
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Al-doped zinc stannate films for photovoltaic applications
摘要： Al-doped zinc stannate (Zn2SnO4 : Al or Zn-Sn-O : Al or AZTO) has attracted considerable attention as a next-generation transparent conducting oxide (TCO) owing to its properties. In this study, AZTO films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature. The as-deposited AZTO films were confirmed to be satisfactorily adherent with good uniformity. These films had an average transmittance of over 80%, energy band gap of >3.5 eV, and relatively low electrical resistivity of 1.29×10?1 Ω cm. The composition ratio of Zn/Sn at 140 W of SnO2 power was approximately 2, indicating the formation of AZTO film with stoichiometric composition of Zn2SnO4 : Al at this power. Further, the Cu(InGa)Se2 (CIGS) device fabricated with AZTO (140 W) as a TCO exhibited an efficiency of 0.73%, with a VOC of 0.51 V, JSC of 3.76 mA/cm2, and FF of 38.4%. Furthermore, the conversion efficiency of CIGS cell was enhanced to 2.82% by employing the AZTO film deposited at the elevated temperature of 350 oC.
关键词： Al-doped Zinc Stannate,Thin Films,Cu(InGa)Se2,Transparent Conducting Oxides
更新于2025-09-23 15:19:57