- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Beyond 10% efficient Cu2ZnSn(S,Se)4 solar cells: Effects of the introduction of SnS powder during selenization process
摘要： Cu2ZnSn(S,Se)4 (CZTSSe) has received considerable attention as the promising absorber for thin-film solar cells. For traditional selenization process, the issues of Sn-loss, lower S/(S t Se) ratio, and unsuitable back contact interface extensively exist in CZTSSe solar cells. In present work, SnSe and SnS powder is introduced during selenization process, respectively. The effects of SnSe and SnS powder on CZTSSe films and the Mo/CZTSSe interface have been comprehensively studied. We discover that SnS not only can provide the Sn-contained vapor in selenization process but also offer S-vapor. Due to the presence of Sn-contained vapor, the number of voids in the CZTSSe absorber and Mo/CZTSSe interface decreases remarkably and the Sn-loss is effectively suppressed. The thickness of Mo(S,Se)2 layer is significantly reduced, and the S/(S t Se) ratio in CZTSSe bulk obviously increases owing to the presence of S-vapor. As a consequence, the open-circuit voltage and fill factor of the solar cell significantly increase and the CZTSSe solar cell with efficiency of 10.07% (total area) is successfully fabricated.
关键词： Cu2ZnSn(S,Se)4 solar cells,SnS powder,Sn-loss,Mo(S,Se)2 layer,S/(StSe) ratio
更新于2025-09-23 15:21:01
-
Boosting the efficiency of solution-based CZTSSe solar cells by using supercritical carbon dioxide treatment
摘要： Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are receiving considerable attention in recent years, owing to the low cost and toxicity as well as high abundance of their constituent elements. Solution-based (mainly precursor solution) methods have been widely used in the fabrication of CZTSSe-based thin film solar cells. Though most record solar cells since 2009 have been achieved using solution-based methods, carbonaceous residues are always formed during post deposition treatment (PDT). These carbonaceous residues are detrimental to grain growth of CZTSSe to form large grains. The presence of unwanted small grains layers will increase the series resistance and reduce the fill factor of the solar cell, thus consequently hindering high efficiency in CZTSSe solar cells. Herein, we propose “green” supercritical carbon dioxide (SCCO2) treatment to overcome the challenge of carbonaceous residues. FT-IR、SEM、XRD and Raman characterizations were used to confirm the reducing of carbonaceous residues in CZTSSe films. The solar cell fabricated from selenized CZTSSe precursor film with SCCO2 treatment under optimal conditions showed the best conversion efficiency of 11.23 % (VOC = 0.456 V, JSC = 36.6 mA/cm2, FF = 67.1 %). To the best of our knowledge, it is the first report on boosting the efficiency of solution-based CZTSSe solar cells by using SCCO2 treatment. In addition, this unique SCCO2 treatment may also bring forth new ideas in other solution-based optoelectronic devices.
关键词： CZTSSe,Cu2ZnSn(S,Se)4,Carbonaceous residues,SCCO2 treatment,Supercritical carbon dioxide treatment
更新于2025-09-23 15:21:01
-
Influence of WSe2 buffer layer at back electrode on performance of Cu2ZnSn(S,Se)4 solar cells
摘要： CZTSSe-based solar cells with a structure of Al/ITO/ZnO/CdS/CZTSSe/p-WSe2/Mo (denoted as WSe2-CZTSSe solar cell) were prepared on the Mo-coated soda-lime glass (SLG) with a pre-sputtering metal tungsten (W) layer. Comparing with the conventional CZTSSe solar cell with a structure of Al/ITO/ZnO/CdS/CZTSSe/n-MoSe2/Mo (denoted as CZTSSe solar cell), the WSe2-CZTSSe solar cell shows a significant improvement in open-circuit voltage (VOC), short-circuit current density (JSC) and fill factor (FF), and so its power conversion efficiency (PCE) enhances. The largest enhancement of the PCE is from 4.13% of the CZTSSe solar cell to 5.45% of the WSe2-CZTSSe solar cell. The increased VOC and JSC are mainly due to the enhancement of photogenerated current density (JL) and decrease of reversion saturation current density (J0), while the increased FF is ascribed to the increase of shunt resistance (RSh). The influence mechanism of the WSe2 buffer layer on JL, J0 and RSh is also investigated in detail. Our results present a route of increment of PCE by reducing and even removing back contact barrier between CZTSSe and MoSe2 layers.
关键词： Cu2ZnSn(S,Se)4,Solar cell,MoSe2,Contact potential barrier,Interface,WSe2
更新于2025-09-23 15:19:57
-
Hybrid chemical bath deposition-CdS/sputter-Zn(O,S) alternative buffer for Cu <sub/>2</sub> ZnSn(S,Se) <sub/>4</sub> based solar cells
摘要： To replace the conventionally used CdS buffers in Cu2ZnSn(S,Se)4 (CZTSSe) based thin-film solar cells, sputtered Zn(O,S) buffer layers have been investigated. Zn(O,S) layers with three different [O]/([O] + [S]) ratios (0.4, 0.7, and 0.8)—and a combination of Zn(O,S) and CdS (“hybrid buffer layer”) were studied. In comparison to the CdS reference, the external quantum efficiency (EQE) of the Zn(O,S)-buffered devices increases in the short- and long-wavelength regions of the spectrum. However, the average EQE ranges below that of the CdS reference, and the devices show a low open-circuit voltage (VOC). By adding a very thin CdS layer (5 nm) between the absorber and the Zn(O,S) buffer, the VOC loss is completely avoided. Using thicker intermediate CdS layers result in a further device improvement, with VOC values above those of the CdS reference. X-ray photoelectron spectroscopy (XPS) measurements suggest that the thin CdS layer prevents damage to the absorber surface during the sputter deposition of the Zn(O,S) buffer. With the hybrid buffer configuration, a record VOC deficit, i.e., a minimum difference between bandgap energy Eg (divided by the elementary charge q) and VOC (Eg/q – VOC) of 519 mV could be obtained, i.e., the lowest value reported for kesterite solar cells to date. Thus, the hybrid buffer configuration is a promising approach to overcome one of the main bottlenecks of kesterite-based solar cells, while simultaneously also reducing the amount of cadmium needed in the device.
关键词： VOC deficit,Cu2ZnSn(S,Se)4,CdS,hybrid buffer layer,open-circuit voltage,X-ray photoelectron spectroscopy,thin-film solar cells,Zn(O,S) buffer layers,external quantum efficiency
更新于2025-09-23 15:19:57
-
Novel hydrothermal route for synthesis of photoactive Cu2ZnSn(S,Se)4 nanocrystalline thin film: efficient photovoltaic performance
摘要： This work reports single-step deposition of Cu2ZnSn(S,Se)4 (CZTSSe) nanocrystalline film via simple and non-toxic hydrothermal route. The hydrothermal growth of CZTSSe multinary nanocrystalline film formation based on Ostwald ripening law which results in highly oriented nanocrystalline nanoflakes. The UV–Vis spectroscopy illustrates that maximum absorption was observed in the range of 650–700 nm with band gap energy of 1.48 eV. Structural studies confirm the formation of pure-phase kesterite crystal structure. Further, Raman shift at 174 cm?1, 196 cm?1 and 236 cm?1 shows A1 mode of vibration corresponding to kesterite structure. Densely packed and compact nanoflake formation was observed in SEM studies. Compositional analysis confirms the stoichiometric film formation with expected valence states of CZTSSe stoichiometry: Cu+, Zn2+, Sn4+, S2? and Se2?. The photoelectrochemical cell performance of CZTSSe film photoelectrode was investigated using simple two-electrode system. In dark condition, J–V measurement demonstrates semiconductor behavior and under illumination shows generation of photocurrent of 3.64 mA/cm2 at a photovoltage of 400 mV. The CZTSSe films show photoconversion efficiency (η) of 3.41%, indicating that the hydrothermally grown CZTSSe photocathode is a promising material for film solar cell technology. Electron impedance spectroscopy illustrated generation of charge transport resistance of 465 Ω.
关键词： Hydrothermal route,Photovoltaic performance,Cu2ZnSn(S,Nanocrystalline film,Se)4
更新于2025-09-23 15:19:57
-
Flexible high-efficiency CZTSSe solar cells on diverse flexible substrates via an adhesive-bonding transfer method
摘要： Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells are showing great promise due to using earth-abundant and non-toxic materials and tuning the bandgap through the amount of S and Se. Flexible high-efficiency CZTSSe solar cells are one of the outstanding research challenges because they currently require the use of thick glass substrates due to the high-temperature heat treatment process, and for this reason, few flexible CZTSSe solar cells have been reported. Furthermore, most researchers have used thin glass and metal substrates with little flexibility; the power conversion efficiency (PCE or ?) values of the solar cells made with them have been somewhat lower. To overcome these hurdles, we transferred high-efficiency CZTSSe solar cells formed on a soda-lime glass substrate to flexible substrates via an adhesive-bonding transfer method. Via this method, we were able to achieve the PCE of 5.8 to 7.1% on completely flexible substrates such as cloth, paper, and polyethylene terephthalate (PET). In particular, we were able to produce a CZTSSe solar cell on a PET substrate with a PCE of 7.1%, which is the highest among fully-flexible CZTSSe solar cells currently known to us. In addition, we deeply analyzed the PCE degradation of the flexible CZTSSe solar cell fabricated by the transfer method through a panoramic focused ion-beam image and nanoindentation. From the results of our work, we provide an insight into the possibility of making flexible high-efficiency CZTSSe solar cells using our transfer method.
关键词： thin-film solar cell,transfer method,polyethylene terephthalate (PET),Cu2ZnSn(S,Se)4 (CZTSSe),diverse flexible substrates
更新于2025-09-19 17:13:59
-
Stability, reliability, upscaling and possible technological applications of Kesterite solar cells
摘要： We review the stability and reliability results of Kesterite (Cu2ZnSn(S,Se)4, CZTSSe) based solar cells and we complete the reviewed data with additional as yet unpublished data on these matters. We also review published and new data on upscaling and the possible technological applications for this material. The Kesterite material is composed of mainly earth abundant elements and therefore very attractive for large scale applications. Stability data are so far quite scarce and the main results are the accelerated ageing tests carried out for the CZTSSe monograin technology, as well as yet unpublished data on long indoors and outdoors irradiance tests carried out on thin film CZTSSe technology deposited by a wet processing method. On upscaling and technological applications we point out the works on three main large scale photovoltaic technologies (monograin, in-line vacuum thin film, and wet-deposited thin film), as well as some work on water splitting applications.
关键词： applications,Cu2ZnSn(S,Se)4,Kesterite,stability,review,photovoltaics
更新于2025-09-19 17:13:59
-
Mechanism of Current Shunting in Flexible Cu <sub/>2</sub> Zn <sub/> 1? <i>x</i> </sub> Cd <sub/><i>x</i> </sub> Sn(S,Se) <sub/>4</sub> Solar Cells
摘要： Partial cation substitution is an effective way to inhibit defects and carrier recombination, which can improve the efficiency of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Herein, flexible Cu2Zn1?xCdxSn(S,Se)4 (x = 0–15%) solar cells are fabricated on Mo foils with partial Cd substitution for Zn via a green solution-process. The best device performance can be achieved when Cd/(Zn + Cd) = 8%, with an efficiency up to 6.49% and a significantly improved device repeatability. The EU decreases from 24 to 15 meV, indicating that antisite defects and band tailings are effectively suppressed. C–V data reveal that Wd and Vbi are enhanced after doping Cd, resulting in a stronger built-in electric field which facilitates Fermi-level splitting and hence increases band bending of the absorber toward the junction interface. Furthermore, the mechanism of current shunting is studied using an equivalent circuit model with three parallel current pathways to fit J–V curves. The key parameters for the solar cell diode such as A, J0, and Rsh are significantly improved by partially substituting Zn with Cd, demonstrating that current shunting loss is suppressed and the junction quality is improved, resulting in a significant improvement in device repeatability.
关键词： current shunting,Cu2ZnSn(S,Se)4 solar cells,Cd substitutions,Mo foils,flexible substrates
更新于2025-09-19 17:13:59
-
Lithium-assisted synergistic engineering of charge transport both in GBs and GI for Ag-substituted Cu2ZnSn(S,Se)4 solar cells
摘要： Although silver (Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic (PV) technology, its further development is still hindered by the fairly low electrical conductivity due to the significant decrease of acceptors amount. In this work, a versatile Li-Ag co-doping strategy is demonstrated to mitigate the poor electrical conductivity arising from Ag through direct incorporating Li via postdeposition treatment (PDT) on top of the Ag-substituted CZTSSe absorber. Depth characterizations demonstrate that Li incorporation increases p-type carrier concentration, improves the carrier collection within the bulk, reduces the defects energy level as well as inverts the electric field polarity at grain boundaries (GBs) for Ag-substituted CZTSSe system. Benefiting from this lithium-assisted complex engineering of electrical performance both in grain interior (GI) and GBs, the power conversion efficiency (PCE) is finally increased from 9.21% to 10.29%. This systematic study represents an effective way to overcome the challenges encountered in Ag substitution, and these findings support a new aspect that the synergistic effects of double cation dopant will further pave the way for the development of high efficiency kesterite PV technology.
关键词： Ag substitution,Alkali doping,Cu2ZnSn(S,Se)4,Thin film solar cell,Post-treatment
更新于2025-09-19 17:13:59
-
Superficial composition engineering for oxide nanoparticles derived Cu2ZnSn(S, Se)4 solar cells by a three-step annealing process
摘要： In this work, a three-step (sulfurization-selenization-sulfurization) annealing process was designed to optimize the surface constitution of Cu2ZnSn(S, Se)4 (CZTSSe) thin films, which was prepared by oxide nanoparticles-based approach. The devices with the Mo/CZTSSe/CdS/ZnMgO/ZnO:Al/Al structure were fabricated and their performances were studied. The additional post-sulfurization with low toxicity sulfur powder has negligible impact on the structure, morphology and composition of CZTSSe bulk, however, it improves open circuit voltage of device significantly. The open circuit voltage can be increased significantly from 408 mV (without surface sulfurization) to 497 mV (with surface sulfurization). This is benefited from the increase of surficial sulfur content and the broadening of the surface band-gap of the CZTSSe thin film. The result is confirmed by X-ray photoelectron spectroscopy analysis. Such a crucial three-step annealing process promotes the power conversion efficiency from 4.71% (2-step) to 6.37% (3-step), which is the champion efficiency of oxide precursor derived CZTSSe solar cell.
关键词： Thin films,Cu2ZnSn(S, Se)4,Solar energy materials,Post-sulfurization
更新于2025-09-11 14:15:04