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Structural and optical study of CZTS-reduced graphene oxide composite towards photovoltaic device application
摘要： The deficit in obtaining targeted photo conversion efficiency for (Cu2ZnSnS4) CZTS based photovoltaic cell results either from insufficient photo charge carrier generation or e-/h+ pair transportation towards the end of electrodes, which lowers the device Voc and Jsc. On this regard, semiconducting absorber material merged with highly mobile reduced graphene oxide (rGO) as filler form a bridging network within active layer facilitates both improvement in charge carrier separation as well as transportation to electrodes before recombination occurs. A simple solution casting approach for CZTS nanoparticle anchored rGO composite for photovoltaic device application is reported here. The presence and distribution of CZTS nanoparticles over the surface of rGO sheet is confirmed from XRD, Raman, SEM and UV-Visible analysis.
关键词： Raman,XRD,Cu2ZnSnS4 (CZTS),reduced graphene oxide (rGO),SEM,Photovoltaic device
更新于2025-09-12 10:27:22
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Doped quaternary metal chalcogenides Cu2ZnSnS4 nanocrystals as efficient light harvesters for solar cell devices
摘要： In this study, we report highly stable photoactive quaternary metal chalcogenide Cu2ZnSnS4 nanocrystals synthesis from low cost, ecofriendly, non-toxic and earth-abundant elements for photovoltaic devices. Their electro-optical properties such as, tunable band gap, high-absorption coefficient and wide absorption window make them highly suitable materials to be utilized as absorber layer and counter electrode in various types of solar cells. For this purpose, first we synthesized Cu2ZnSnS4 nanocrystals by colloidal, co-precipitation, wet chemical and hydrothermal methods using stabilizing agents under variable reaction conditions. Afterwards, hydrothermal method was employed to synthesize nanocrystals of Cu2CoSnS4, Cu2FeSnS4, Cu2SrSnS4 and Cu2NiSnS4 by replacing Zn with Co, Fe, Sr and Ni metals. The UV–Vis absorption spectra indicate the nanocrystals can absorb entire visible region of electromagnetic radiation and their band gaps range from 1.5 to 1.7 eV. The X-ray diffraction (XRD) patterns confirm the formation of kieserite phase of all nanocrystals with a crystallite size of approximately 6–10 nm. These nanocrystals are coated on surface of the synthesized ZnO nanoparticles to study their application as absorbing layer in quantum dots-sensitized solar cells (QDSSCs). Moreover, they were adsorbed on ITO substrate to study their utilization as counter electrode of dye-sensitized solar cells (DSSCs). The solar cells exhibit efficiencies of 1.2–1.8%, which prove the synthesized nanocrystals can perform excellent role as light absorber and counter electrode in any kind of solar cell device.
关键词： solar cell devices,light harvesters,photovoltaic devices,dye-sensitized solar cells,quantum dots-sensitized solar cells,Cu2ZnSnS4 nanocrystals
更新于2025-09-12 10:27:22
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Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Thin‐Film Solar Cells
摘要： Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T< 550 °C. The electrical properties of ATO are even found to improve when CZTS is annealed at T= 534 °C. At T= 580 °C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
关键词： antimony-doped tin oxides,sulfurization,thin-film solar cells,transparent back contacts,Cu2ZnSnS4
更新于2025-09-11 14:15:04
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A ambient-air sulfurization process for Cu2ZnSnS4 thin film solar cells: self-creating inert atmosphere using sulfur vapor
摘要： Sulfurization is an inevitable process for depositing high-quality Cu2ZnSnS4 (CZTS) thin films, which usually implements under high vacuum or inert atmosphere. In this work, a novel ambient-air sulfurization was designed for fabricating CZTS absorber, aiming to eliminate the requirement of complex vacuum equipment. The sulfur powder and oxide precursor films were enclosed in a quartz container, in which the inert-atmosphere was self-created during the annealing. The sulfurization mechanism was studied carefully through varying the amount of sulfur powder. Finally, the optimized CZTS thin films showed pure Kesterite phase, large grains as well as suitable band gap. The device fabricated with the ambient-air sulfurized CZTS thin films exhibited efficiency of 3% with Voc = 0.52V, Jsc = 12.61mA/cm2, and FF = 46.6%. This study offers a facile sulfurization route for CZTS thin films and the successful design principle could be applied in other absorber materials.
关键词： solar cell,Cu2ZnSnS4,ambient-air,thin films,sulfurization
更新于2025-09-11 14:15:04
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Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures
摘要： Cu2ZnSnS4 (CZTS) has been recognized as a promising thin-?lm absorber material of chalcopyrite-related solar cells. A two-stage method for fabricating CZTS ?lms using CZTS nanoparticles was developed. Nanocrystal inks fabricated by a ball-milling method was utilized to deposit CZTS precursors by spin-coating approach. The CZTS precursors were annealed in the sulfur atmosphere under di?erent annealing temperatures ranging from 550 °C to 650 °C. In?uences of annealing temperature on grain growth, composition, crystallinity, and photovoltaic properties of CZTS ?lms were characterized. With the increase of annealing temperature, grain growth was enhanced, while the sulfur atomic ratio ?st increased then decreased. The crystallinity of the ?lms was signi?cantly improved after the annealing, and the obvious peak of the secondary phase of ZnS, were observed from the X-ray di?raction results, when the annealing temperature increased to 625 °C. However, the secondary phase was not detected from the surface Raman spectrum. Through comparing the Raman spectrum of di?erent areas of the CZTS ?lm, secondary phases of ZnS and SnS were observed, indicating the decomposition of CZTS ?lms, due to the high temperature. The highest conversion e?ciency of 7.5% was obtained when the annealing temperature was 600 °C.
关键词： Cu2ZnSnS4 solar cell,secondary phase,annealing
更新于2025-09-11 14:15:04