Nanoelectronics and Materials Development || Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property

摘要： In this paper, the fabrication and electrical property characterization of epitaxial Cu3Ge thin film are performed. By adjusting deposition parameters, the crystallinity of the as‐grown Cu3Ge thin films is improved, with the formation of twins within it. The average work function of epitaxial Cu3Ge thin film is measured to be ～4.47 + 0.02 eV, render‐ ing it a desirable mid‐gap gate metal for applications in complementary metal‐oxide semiconductor (CMOS) devices. The present study therefore shows an epitaxial Cu3Ge thin film that is promising for applications.