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Effect of gas mixing ratio on structural characteristics of titanium dioxide nanostructures synthesized by DC reactive magnetron sputtering
摘要： In this work, high-quality and highly pure titanium dioxide nanostructures were synthesized by a homemade dc closed-field unbalanced reactive magnetron sputtering system. The operation parameters of the magnetron sputtering system were optimized to prepare TiO2 nanostructures as thin films on glass substrates. These nanostructures were characterized by x-ray diffraction, atomic force microscopy and Fourier-transform infrared spectroscopy. Both anatase and rutile phases were identified. The mixing ratio of argon and oxygen (Ar:O2) gases was found very important to control the structural characteristics of the prepared nanostructures.
关键词： Nanostructures,Reactive sputtering,Titanium dioxide,Thin films
更新于2025-09-23 15:23:52
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Thickness-modulated thermochromism of vanadium dioxide thin films grown by magnetron sputtering
摘要： Vanadium dioxide (VO2) films were prepared on soda-lime glass by direct current magnetron sputtering at 320 °C. Effects of film thickness on the microstructure, surface morphology and thermochromic performance of VO2 films were investigated. X-ray diffraction showed that the deposited films have strong preferred orientation of VO2 (011) lattice when the film thickness higher than 102 nm. The calculated grain sizes of VO2 films increased from 16.05 nm to 34.56 nm continuously with the increasing of film thickness. UV/VIS/NIR spectrophotometer showed that the visible transmittance deceased while the infrared transmittance switching efficiency increased as the film thickness increased from 79 nm to 264 nm. Additionally, the optical band gaps of VO2 films were in a range of 1.15 eV–1.40 eV, and the thicker film exhibited the smaller value. Moreover, the results of measured temperature-dependent electrical resistivity of these VO2 films showed that the phase-transition temperature is in a range of 53–60 °C, which is much lower than that of single-crystal VO2 (68 °C). With the film thickness increasing, the metal–semiconductor phase transition becomes more obvious. Overall, films with thickness in the range of 80–100 nm showed comparatively relatively balanced combination of visible transmittance and solar switching efficiency.
关键词： Thermochromic performance,Film thickness,Vanadium dioxide,Magnetron sputtering
更新于2025-09-23 15:23:52
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Diamond like carbon films with embedded Cu nanoclusters deposited by reactive high power impulse magnetron sputtering: Pulse length effects
摘要： In the present study diamond like carbon films with embedded Cu nanoclusters (DLC:Cu films) were deposited by reactive high power impulse magnetron sputtering (HIPIMS). HIPIMS pulse length (pulse on time) effects were considered. The dependence of the chemical composition on pulse length was found. Structure of diamond like carbon matrix of the nanocomposite films studied by Raman scattering spectroscopy has indicated weak increase of the sp3/sp2 carbon bond ratio with HIPIMS pulse length. Studies of the shape and dimensions of copper nanoclusters performed by He ion microscopy have shown that increase of the HIPIMS pulse on time resulted in increased number of the nanoclusters and subsequent increase of the Cu nanoclusters size. Study of optical properties revealed surface plasmon resonance effect in all investigated films. Correlation between the optical absorption spectra and photoexcited charge carrier relaxation time recorded by the pump probe spectroscopy was found. The highest relaxation time was observed at the excitation wavelength close to the absorption surface plasmon resonance peak wavelength The highest maximum relaxation time was observed for the DLC:Cu film deposited by using HIPIMS pulse of 400 μs on time. It was explained by the dependence of the relaxation time on Cu nanocluster size.
关键词： Pulse length,Diamond-like carbon,High-power pulsed magnetron sputtering,Structure,Optical properties,X-ray photoelectron spectroscopy,Copper,Nanoclusters
更新于2025-09-23 15:23:52
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Preparation of multicomponent thin films by magnetron co-sputtering method: The Cu-Ti case study
摘要： The paper discusses the preparation of multicomponent thin films of Cu-Ti composite with desired elemental composition using the pulsed magnetron co-sputtering technology. The technological goal described in the paper was deposition the Cu-Ti composite with elemental ratio of about 50/50 at.%, which is close to the eutectic point from the Cu-Ti alloy system. A large difference in the sputtering yield (about seven-fold) of Cu and Ti metals was challenging, because of the features of used power supplies. Desired concentrations of the Ti and Cu elements were obtained as a result of application of multimagnetron sputtering system, where magnetrons were equipped with the Ti or Cu targets. Additionally, pulse power supply was used together with the pulse width modulation controller. Moreover, the article presents investigations of structural and mechanical properties of deposited Cu, Ti and Cu-Ti films with elemental composition of ca. 50/50 at.%. It was found that the two component Cu0.5Ti0.5 thin films were composed of Cu4Ti3 nanocrystallites built-in an amorphous matrix. As compared to the pure Cu and Ti thin films, the prepared composite exhibited improved hardness and better elasticity reflected in lower values of the Young’s modulus. The results of nanoindentation investigations showed that the Cu0.5Ti0.5 composite thin film was characterized by the hardness of 7.59 GPa.
关键词： thin film,CuTi alloy,multicomponent coating,magnetron sputtering
更新于2025-09-23 15:23:52
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Characteristics of Vanadium Oxide Thin Films Fabricated by Unbalanced Magnetron Sputtering for Smart Window Application
摘要： Vanadium oxide (VOx) thin films were deposited by an unbalanced magnetron (UBM) sputtering system with a vanadium metal target and O2 reaction gas, and thermally treated at various annealing temperatures. In this work, the structural, electrical, and optical properties of the fabricated VOx films with various annealing temperatures were experimentally investigated. The UBM sputter grown VOx thin films exhibited amorphous structure, and had a very weak peak of V2O5 (002) owing to very thin films. However, the crystallite size of VOx films increased with increasing annealing temperature. The surface roughness of VOx films and average transmittance decreased with increasing annealing temperature. The resistivity of VOx films also decreased with increasing annealing temperature, while the electrical properties of films improved.
关键词： Transmittance,Unbalanced Magnetron Sputtering,Vanadium Oxide,Surface Roughness,Resistivity
更新于2025-09-23 15:23:52
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Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method
摘要： To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O2 thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the (Hf, Zr)O2 thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.
关键词： (Hf,Zr)O2,Sputtering,Deposition pressure,Ferroelectric
更新于2025-09-23 15:23:52
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Effect of RF power on the structural and optical properties of ZnS thin films prepared by RF-sputtering
摘要： Zinc sulphide (ZnS) thin films have grown on glass and Si substrates by reactive cathodic radio frequency (RF) sputtering. The RF power was varied in the range of 100 to 250 W, while the deposition time is set at 75 min. The optical, structural, and morphological properties of these thin films have been studied. The optical properties (mainly thickness, refractive index, absorption coefficient, and optical band gap) were investigated by optical transmittance measurements in the wavelength range of ultraviolet-visible-near infrared spectroscopy and spectroscopy infrared with Fourier transform. Fourier (FT-IR) and XRD analysis indicated that all sputtering ZnS films had a single-phase with a preferred orientation along the (111) plane of the zinc sphalerite phase (ZB). The crystallite size ranged from 11.5 to 48.5 nm with RF power getting a maximum of 200 W. UV–visible measurements exhibited that the ZnS film had more than 80% transmission in the visible wavelength region. In addition, it has been observed that the band gap energy of ZnS films is decreased slightly from 3.52 to 3.29 eV, and as the RF power is increased, the film thickness increases with the speed of deposit growth. Scanning electron microscopy observations revealed the types of smooth-surfaced films. The measurements (FT-IR) revealed at wave number 1118 and 465.02 cm?1 absorption bands corresponding to the symmetrical and asymmetric vibration of the Zn–S stretching mode. X-ray reflectometry measurements of ZnS films have shown that the density of the films is (3.9 g/cm3) close to that of solid ZnS.
关键词： RF-sputtering ZnS,ZnS buffer layer for solar cell,ZnS thin films by sputtered
更新于2025-09-23 15:23:52
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Intrinsic Au-decoration on anodic TiO2 nanotubes grown from metastable Ti–Au sputtered alloys—High density co-catalyst decoration enhances the photocatalytic H2 evolution
摘要： Recent work demonstrated that intrinsic Au nanoparticle decoration of TiO2 nanotube arrays (NTs) can be achieved by electrochemical anodization of Ti–Au alloy substrates. However, for a Ti–Au cast alloy produced by melt-alloying, the Au concentration cannot exceed the solubility limit of Au in Ti of 0.2 at.% – this sets constraints on the intrinsic Au nanoparticle loading on anodic TiO2 NTs. Here we explore “metastable” Ti–Au metal substrates that are produced by Ti and Au cosputtering and we establish Au concentrations that far exceed the solubility limit in cast Ti–Au alloys. We show the use of these “metastable” Ti–Au sputtered layers for the anodic formation of TiO2 NTs with a much higher density of Au nanoparticle loading than using classic alloys. Under optimized conditions (Au nanoparticle density) photocatalytic H2 production from such Au@TiO2 platforms provides a 15 times higher photocatalytic H2 evolution rate than the best rates achieved with conventional alloys.
关键词： Anodic TiO2 nanotube,Metastable Ti–Au alloy,Sputtering,Anodization,Photocatalytic H2 evolution
更新于2025-09-23 15:23:52
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[IEEE 2018 International IEEE Conference and workshop in óbuda on Electrical and Power Engineering (CANDO-EPE) - Budapest, Hungary (2018.11.20-2018.11.21)] 2018 International IEEE Conference and Workshop in óbuda on Electrical and Power Engineering (CANDO-EPE) - Plasma ignition and current control considerations for magnetron sputtering power supplies
摘要： Physical vapor deposition processes require different types of special power supplies for the ignition and sustaining of the plasma inside the sputtering chamber. The paper identifies some requirements for the design of a pulsed DC converter. Experiments have been carried out to identify the current-voltage characteristics of the vacuum chamber with the supply of different gases, and gas mixtures in the usable pressure domain. The vacuum chamber was supplied with voltage and current impulse trains with various parameters in order to acquire relevant data regarding the gas breakdown in pulsed power mode. A power electronic converter topology and control routine has been proposed, which is suitable for plasma ignition and discharge current control. The proof of concept has been demonstrated with the help of the magnetron sputtering chamber supplied by a test circuit.
关键词： current control,power electronic converter,plasma ignition,magnetron sputtering
更新于2025-09-23 15:23:52
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - The Effect of H<inf>2</inf>/Ar Plasma Treatment Over Photoconductivity of Sige Nanoparticles Sandwiched Between Silicon Oxide Matrix
摘要： The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.
关键词： hydrogenation,magnetron sputtering,photoconductivity,HiPIMS,SiGe,SiO2
更新于2025-09-23 15:22:29